查询词典 Si

Sample analysis shows that within alumina glaze formula, when Si/Al〈4.0, there is anorthite phase and little quartz and submellite to separate out; When Si/Al〉4.0, sample stays fine at glass state; anorthite crystal forms at the highe

样品呈良好的玻璃态；高铝釉式（Si／Al〈4.0）汝瓷釉内钙长石晶体在最高烧成温度（1260℃）保温过程中就已生成，在降温过程中晶体继续长大。

0At% nanocrystalline alloys the Al〓Fe〓Mm and Al〓Fe〓Mm nanoscale particles appear in as-received state and the phase transformation dynamics of Al〓Fe〓Mm to α-Al〓〓Si was controlled by atomic lattice diffusion mechanism in high-temperature state.

指出：急冷态快凝Al-Fe-V-Si合金中Fe原子存在α-Al、α-Al替代固溶体及弥散α-Al〓〓Si金属间化合物三种组态；高温热曝露态Fe原子组态类型和相对含量有所变化。

Fitting to the Hall loops of the TbFe/Si MLs,we also found that a strong biquadratic coupling in this system.

通过对TbFe/Si室温霍尔回线的拟合，我们还发现在TbFe/Si多层膜中存在着很强的高阶耦合。

Based on results in this study and our previous findings, we believe that differences of ATPase activity in cells of aloe leaf Chlorenchyma reflect the differences of physiological status and function of aloe leaves, regulating and/or enhancing ATPase activity is an important cyto-physiological mechanism of Si-alleviated effect on salt injury to aloe.

叶同化组织细胞中ATPase活性的差异性反映着芦荟叶生理状态和功能的差异性，可溶性Si调节或增强盐胁迫下芦荟ATPase活性是Si缓解芦荟盐胁迫伤害效应的重要细胞生理机制。

The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.

用X射线衍射方法通过不同晶面的ω扫描测试，分析了Si衬底GaN蓝光LED外延膜中n-型层δ掺杂Si处理对外延膜结晶性能的影响。

Two kinds of multi-layer structure of VO_x/PS/Si and VO_x/Si were fabricated, and the effects of porous silicon on the composition of vanadium oxide thin films were analysed.

对比了VO_x/PS/Si结构与VO_x/Si结构中氧化钒薄膜电阻对温度的热敏感性能，研究了多孔硅基底温度升高对氧化钒薄膜组分的影响。

Diffusion mechanism,microstructure and optical properties of Ag/Si multilayerson annealing have been investigated by in situ X-ray diffraction,high-resolutiontransmission electron microscopy and UV-VIS-NIR spectrophotometer,Siliconatoms diffusing along silver grain boundaries is suggested as the main diffusionmechanism.

采用原位X—射线衍射、高分辨透射电镜截面观察和光吸收谱测试等手段研究了退火过程中Ag/Si多层膜的扩散、结构演变及光学性质变化，并与可固溶性金属/Si系多层膜进行了比较。揭示了Si原子沿Ag晶界的扩散为主要的扩散机制。

The experiments show that the Au/n-ZnO/p-Si SHBT UV enhanced phototransistor enhances the sensitivity of the ultraviolet response noticeably. The UV response sensitivity at 370nm of the phototransistor is 5～10 times that of a ZnO/Si heterojunction UV enhanced photodiode.

实验显示Au/n-ZnO/p-Si结构的紫外增强型的光电三极管对紫外光的响应明显增强，对371nm波长的紫外光的灵敏度是普通n-ZnO/p-Si异质结紫外光电二极管道的5～10倍。

In recent years, with the development of science and technology, particularly in the field of electronic technology, Si semiconductor increasingly harsh demands, in order to obtain a suitable quality of the materials we need. Molecular beam extention growth technology has received increasing attention .Si and Ge and SiGe heterojunction has wide research because of the wider use of the structure.

近年来，随着科学技术的发展，尤其是电子领域技术的快速更新，我们对Si基半导体的要求越来越苛刻，为了获得高质量的适合我们需要的材料，分子束外延的生长技术越来越受到重视，而Si和Ge因为SiGe异质结结构的广泛应用，一直是实验和理论研究的热点，我们通过分子动力学的模拟来了解这种方法的微观机理是非常有意义的。

High volume fraction SiCp reinforced aluminum matrix composites and high Si content Al-Si alloy become the ideal candidates for electronic packaging materials due to their superior properties such as high thermal conductivity, tailorable coefficient of thermal expansion as well as low density.

高体积分数的SiCp/Al复合材料和高Si含量 Al-Si 合金具有高导热、膨胀系数可调、低密度等特性，成为理想的电子封装材料。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。