查询词典 Si

The fabrication of SiNW was used by "electroless etching" which was when (100) c-Si was immersed in the solution containing silver nitrate and hydrofluoric acid. Si was etched by fluoric ion and released electrons to combine with silver ion to form Ag particles.

制作矽奈米线阵列的方式为无电镀蚀刻法，系将一p-type(100)之矽基板置入氢氟酸与销酸银的混合蚀刻液中，当溶液中之氟离子与矽基板接触后，矽即被解离成矽离子并放出一颗电子。

The results showed that the mobility of free carriers is the key inluencing factor on the electrical conductivity of intrinsic nc-Si: H films but the effect of free carrier concentration is finite, while the free carrier concentration and mobility are both the main influencing factors on the electrical conductivity of phosphorus-doped nc-Si: H films. Its transportability can be reasonably explained by a HQD model.

研究结果表明影响本征纳米硅电导率的主导因素是载流子的迁移率，而自由载流子浓度影响有限；影响掺磷纳米硅薄膜电导率的因素既包括磷掺杂产生的自由载流子，又包括迁移率，其输运过程可用量子点隧穿模型合理解释。

National measurement standards may be primary standards, which are primary realizations of the SI units or agreed representations of SI units based on fundamental physical constants, or they may be secondary standards which are standards calibrated by another national metrology institute.

国家测量标准可以是基准，它们是 SI 单位的原级实现或是以基本物理常量为根据的 SI 单位约定的表达式，或是由其他国家计量院所校准的次级标准。

NOTE 3 Calibration laboratories that maintain their own primary standard or representation of SI units based on fundamental physical constants can claim traceability to the SI system only after these standards have been compared, directly or indirectly, with other similar standards of a national metrology institute.

注3： 持有自己的基准或基於基本物理常量的 SI 单位表达式的校准实验室，只有在将这些标准直接或间接地与国家计量院的类似标准进行比对之后，方能宣称溯源到 SI 单位制。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

As the increasing in hot wire temperature, it turns out to be a mixture state of a-Si /u-Si.

随着热丝温度的增加，薄膜开始呈现出非晶/微晶相混合的结构。

Effects of P modification on primary Si in hypereutectic Al-Si die casting alloy with different cooling rates were investigated.

以过共晶压铸铝合金为对象，研究了P变质对不同冷却速度下初晶Si组织的影响。发现P变质处理前后随冷却速度的增加，初晶Si尺寸减小的变化趋势十分相似，并且都存在一个明显的突变区域。

In order to analyze the effect of structure of hypereutectic Al-Si alloy on its machinability, the cutting test to two hypereutectic Al-Si alloys which have the same chemical composition but different structures is made and their cutting mechanism is studied.

为分析过共晶铝硅合金组织对其切削加工性能的影响，对两种化学成分相同但是组织结构不同的过共晶铝硅合金进行了切削试验研究并探讨了其切削机理。

A new structure of JFET is proposed by us based on the structure of existing trench JFET, namely replacing part of Si under the gate to SiO2, which is insulating and has 1/3 inductivity as low as Si, in order to reduce Gate-Drain capacity CGD, and consequently reduce switching loss.

为了检验创新结构的效果，本文对本研究提出的新结构以及现有国际上先进的常断，常通JFET结构，和沟槽栅MOSFET结构进行了仿真研究与对比。

General use Mathematics, Geometric, Drawing, Chemistry and Physics, Biology and Medicine, Prefix Used wuth SI Units, si dERIVED Units, Subatomic Particles and Quanta, International System of Units Signs and Symbol Print version

常用数学，几何，绘图，化学，物理，生物，医疗，国际单位字首，国际导出单位，次原子粒及国际单位符号表列印版本

It was well-received in all markets, so a gain of three market share points can be expected.

这在所有市场销售良好，所以获得三成的市场占有率是指曰可待的。

This can be useful if you have a directory with a large number of files that need to have text extracted.

这可以非常有用，如果你有一个目录，与大量的文件，需要有文字摘录。