查询词典 SOI

If I tried to go back out onto the secure tarmac area,I certainly would have been machine-gunned down, soI found a gracious airline employee who radioed the bus driver.

如果我试图走回到安全停机坪区，我可能会惨死在机器下面，但是我发现了一个亲切的空乘人员，他用无线电通知了司机。

If I tried to go back out onto the secure tarmac area,I certainly would have been machine-gunned down, soI found a gracious airline employee who radioed the bus driver.

如果我回到安全停机坪，我可能会惨死在机器下面，但是我发现了一个亲切的空乘人员，他用无线电通知了司机。

The vertical electric field of the buried layer is enhanced due to the low k of the dielectric buried layer at the drain side,the electric field in the drift region is modulated by the compound dielectric layer with different k values,and both increase the breakdown voltage of the device.

CDL SOI结构利用漏端低k介质增强埋层纵向电场，具有不同k值的复合介质埋层调制漂移区电场，二者均使耐压提高。

The excess nitrogen atoms in WNx films desorbs at temperatures below 766 ?aC. The excess nitrogen in WNx films can cause the effective work function lowering. Weak Fermi-level pinning effect is observed on HfO2 film. In this case, WNx/HfO2 gate stack can be applied to p-type fully-depletion SOI devices but WNx is not suitable to be meal gate of bulk p-type MOSFTEs.

氮化钨中过多的氮元素在温度低於766 oC便会析出，且过多的氮会导致氮化钨有效功函数下降，在氧化铪上会有轻微的费米栓效应，这种情形下，氮化钨可应用於p-型全空乏绝缘层上矽金氧半场效电晶体元件，但不适合当块材 p-型金氧半场效电晶体闸极。

The gettering effect of SIM OX intrinsic defects at BOX is much lower than that of the nanocavities. But no Cu are trapped at the rather perfect BOX interfaces of Smart-cut SOI.

在退火温度不高于1000℃时，Al沉淀在吸杂中占据主导地位，在更高的温度下，纳米空腔吸附的杂质量显著上升。

Years (1873～1993) seasonal time series of SOI and NAOI areanalyzed by means of orthogonal wavelet transform.

用正交小波变换方法分析了近121年来季节的南方涛动指数与北大西洋涛动指数的演变特征，结果表明南方涛动指数最显著的变化是周期约为2～7年的年际变化，它们的方差贡献率为55.1%。1920年以前和1960年以后SO年际及年代际变化较强，其余时段较弱。

I'm a tone-deaf,soI do not want to sing in front of our classmates to fool of myself.

我五音不全，可不想在全班同学面前唱歌出洋相。

Experimental results showed that SOI compliant substrates could effectively reduce surface cracks and residual strain of the GaN epilayers.

AFM测试显示其表面粗糙度仅为0.6nm，PL光学性质测试表明柔性衬底上生长的GaN样品含有较少的杂质和缺陷。

High-temperature performance influenced by self-heating effect is analyzed.

介绍了SOI材料结构技术用于高温电路的优势，分析了影响高温性能的自加热效应。

SoI'd like to learn about this topic.

我想多了解一些这方面的情况。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。