查询词典 SOI

A novel SOI high voltage device with a compound dielectric buried layer is proposed,and an analytical model for its electric field and potential is established.A unified criterion of RESURF condition for CDL SOI and a uniform dielectric buried layer SOI device is given.

提出复合介质埋层SOI(compound dielectric buried layer SOI，CDL SOI)高压器件新结构，建立其电场和电势分布的二维解析模型，给出CDL SOI和均匀介质埋层SOI器件的RESURF条件统一判据。

Five novel torsion-mirror optical actuators including double-beam thickness differential structure with single torsional axis, double flexible folded-beam structure with single torsional axis, double-beam vertical torsion comb structure with single torsion axis, four-beam differential compound-micromirror structure with double torsional axis and the combined structure of the four basis forms above, are brought forward. All of these devices could be fabricated by the same silicon micromachining process we have developed. The deformation compensation design with local enhancement for the thin torsional beam which is the key structure of these devices is also put forward to improve the reliability. The three-dimension solid model and two-dimension reduced order model of the torsion-mirror optical actuator are established and then the numerical simulations for evaluating the device characteristics of the statics, dynamics, electrostatic field, mechanical and electrostatic coupling, fluid and solid coupling are carried out to optimize the structure design. Furthermore, three optical fibre clamping structures which could be integrated monolithicly are designed and analyzed to improve the optical coupling capability. 4. Three flexible process flows combined with bulk silicon micromachining and surface silicon micromachining are brought forward to fabricate these novel single-crystal silicon or polysilicon torsion-mirror optical actuators by using the same lithography masks for both SOI wafer and regular silicon wafer. A series of important process experiments are carried out to optimize the process parameters and the process flows. Some novel and typical process phenomena which occurred during the microfabrication are analyzed and then the corresponding solutions are put forward. 5. A MEMS dynamic testing system which exploit blur image synthetic technique, stroboscopic image matching technique, stroboscopic mirau microscopic interferometry technique and microscopic laser dopper vibrometer technique is set up to measure three-dimension and six-freedom micro motions of any MEMS devices with nanometer resolution.

在对硅微机械扭转镜光致动器的光机电特性系统地理论研究的基础上提出了硅微机械扭转镜光致动器的结构设计准则。3、提出了单轴双梁厚度差分结构、单轴双柔性折叠梁结构、单轴双梁垂直扭转梳齿结构、双轴四梁差动复合微镜结构以及以上四种基本结构组合后的衍生结构等五种工艺加工技术兼容的新型的硅微机械扭转镜光致动器，对器件关键结构薄厚度、高耐疲劳扭转梁进行了局部加强的变形补偿设计，建立了器件的三维实体模型以及两维降阶模型，对提出的新结构硅微机械扭转镜光致动器进行了系统的静力学、动力学、静电场、力电耦合和流体固体耦合的建模仿真与优化设计，同时设计并分析了三种可实现单芯片集成的弹性光纤定位夹紧结构。4、提出了组合体硅微加工技术与表面硅微加工技术、兼容同一套光刻版图、可分别基于SOI 晶片和普通Si 晶片、适应于制造提出的各种新结构单晶硅和多晶硅硅微机械扭转镜光致动器的三套柔性加工工艺流程，开展了一系列重要工艺步骤的单项工艺试验，对工艺流程与工艺参数进行了优化，针对加工过程中出现的具有普遍意义的典型工艺问题进行了讨论和分析，并提出了解决方法。5、创新性地将模糊图像合成技术、频闪图像匹配技术、频闪Mirau 显微干涉技术与显微激光多普勒测振技术有机结合，建立起了一套周期运动测量与瞬态运动测量相结合、单点运动测量与全视场运动测量相结合、满足不同MEMS 器件各种动态测试要求的集成的MEMS 三维六自由度微运动精密测量系统。

MethodThe data about the oaktree rings fetched fromLab.of Globosity Eviroment Science College of Hokkaido Island University and the data of SOI publicized by NCEP were used to analyze the δ18O values of tree rings fromHokkaido Island by EMDmethod.

方法利用北海道大学地球环境科学学院实验室的橡树树轮资料和NCEP公布的1953～2002年的SOI资料，采用EMD法对北海道地区的树轮的δ18O进行分析。

SOI has the potential to increase the speed of a processor by 25 to 35 percent, he said.

他说，soi具有将处理器速度提高25%～35%的潜力。

High voltage SOI devices investigated in this thesis are key devices for high voltage SOI SPIC.

本课题所研究的局域电荷槽结构和复合结构高压SOI器件是高压SOI SPIC中的关键器件，是国防科技重点实验室基金试点项目。

High voltage SOI lateral MOS devices studied in this paper are early application work for SOI SPIC.

本课题分析具有局域电荷槽结构的SOI LDMOS的纵向耐压机理，提出界面电荷耐压模型，这是迄今为止所见报道的高压SOI器件理想的新模型。

Lateral high-voltage SOI SOI high voltage integrated circuit device as the cornerstone, because of its lower vertical pressure limits its application.

SOI横向高压器件作为SOI高压集成电路的基石，由于其具有较低的纵向耐压限制了其应用。

The interdigitated SOI DTMOSFET's, and SOI DTMOS-based invertors and ring oscillators are also designed. By fabricating these experimental devices and circuits, a set of submicron thin film SOI CMOS and SOI DTMOS process technology, which can meet the aerospace application requirements, has been developed.

为满足航天用微电子电路的抗辐射、高速、低功耗、高可靠的要求，开展了适于超低压工作的SOI DTMOSFET的研究工作，对DTMOS器件的微观工作机理进行了分析和讨论，揭示了SOI DTMOS器件电学性能优于常规SOI MOS器件的物理本质，以及DTMOS器件与电路在航天领域的巨大应用潜力。

By using the LADES, the simulations of thin-film deep submicron SOI/MOSFET has been carried out and many advantages of thin-film SOI/MOSFET have been analyzed.

对薄层深亚微米SOI器件的平衡态和直流稳态进行了实际的二维模拟，从器件物理的角度和载流子的运动机制出发，分析解释了薄层SOI/MOSFET优于厚层和体硅器件的众多特性。

D students, the author has taken research work on the development of LADES-Ⅳ and LINDECIRSIM Ⅱ software package. Using the LADES, the simulation of deep submicron thin film SOI MOSFET's has been carried out, and many advantages of thin film SOI MOSFET's have been analyzed.

在黄敞教授的指导下和前人研究工作的基础上，本文总结介绍了薄层SOIMOSFET器件物理、SOI CMOS集成电路的优良特性以及薄层SOI MOSFET的数值计算方法。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。