查询词典 RAM

In this advanced architecture of QC-LDPC codes encoder, the RAM is advisably used to store the parity-check bits and the pointers are introduced as the addresses of the RAM instead of shift registers used for storing the generator of H. Thus, the encoding; process can be achieved by reading and writing on RAM and the parity-cheek bits can be output serially.

采用RAM存储校验位，并引入指针来指示RAM的地址方法，从而取代传统编码架构中的移位寄存器，使编码过程通过对RAM的读写操作实现，校验位序列也通过对RAM的读操作串行输出。

The way is to implement the function of asynchronism RAM with the resource of synchronism Block RAM in FPGA, this adeq...

该方法将异步RAM用FPGA内部的同步Block RAM来实现，不但充分利用了FPGA的内部资源，而且减少了因信号的毛刺而产生的读写数据错误。

All RAM memory is managed by the virtual machine; therefore, it is not advisable to use the direct memory access methods to access RAM.

所有的RAM都是被虚拟计算机控制的；因此，用直接存储的方法来存储RAM并不是明智的选择。

Design of the CPA Stable union of base plate and intermediate plates with integral rams inserted centrically into each other Strong and rigid connection of the linear position measuring system with all ram systems Every ram system equipped with main hydraulic ports Every ram system equipped with additional hydraulic ports for movements outside the press Mechanical-hydraulic quick-clamping device Adapter travelling gear for rail-bound transport Complete adapter changing system Advantages Good accessibility for tool changeover Quick and simple adapter change with hydraulic quick-couplers and electric travel gear High compacting forces in both directions Short setup times Automatic centering and clamping of the adapter relative to the machine axis Tool presetting outside the press possible High guiding accuracy

设计的注册会计师安定联盟的底板和中间板块与积分公羊插入centrically到对方强大和刚性连接的线性位置测量系统与所有的RAM系统每一个内存系统配备的主要液压港口每一个内存系统配备额外的液压港口动作外新闻机械式液压快夹紧装置适配器行驶齿轮为铁路运输的约束完成适配器变换系统优势良好的无障碍环境，为工具换届快速简单的适配器改变与液压快车钩及电动旅行齿轮高压实势力在两个方向短期调整时间自动定心夹紧的适配器相对机床主轴刀具预调外新闻可能高指导的准确性

Then from application angle, it also illustrated the static state RAM chip IS61LV256 produced by ISSI, and how to use this chip for the external memory storage of logic analysis card.

然后，从应用的角度简单介绍了ISSI公司的静态RAM芯片IS61LV256，并阐明了将其作为逻辑分析卡外部RAM的使用方法，设计了该RAM与CPLD的硬件接口。

Also, you are allowed to forget this task by just using our AutoFree RAM function, which is fired every time your RAM limit goes bellow a critical point.

另外，您也可以忘记，这项任务由刚刚使用我们的autofree RAM的功能，这是每一次发射了您的RAM限制云贝娄一个临界点。

The master processor finishes the A/D convertion and buffers the result data on it's RAM until 200 Bytes before it is writen into the dual-port RAM. When the data reached the flash's one page, the slave processor reads the data and sends it into the flash by page programming.

方案中，主单片机负责A/D转换并在片上RAM缓存数据，满200字节时打包写入双口RAM；当双口RAM缓冲区中的数据达到闪存的页容量时，由单片机读取数据，从单片机以页编程方式一次写入闪存。

Main memory is contained on chips called RAM chips that use CMOS technology , Common RAM technologies are dynamic RAM and static RAM .

主存储器包含在被称为RAM的芯片当中，RAM芯片是使用CMOS技术制成的，常见的RAM技术是动态RAM 和静态RAM 。

After signal is changed, the control that MCU inputs classics man-machine interface stocks double mouth RAM, DSP takes out these to control is measured and be controlled according to its electric machinery that finish from inside double mouth RAM, stock control double mouth RAM to be numerated by MCU as a result next show.

MCU将经人机接口输入的控制信号转换后存入双口RAM，DSP从双口RAM中取出这些控制量并根据它完成电机控制，然后将控制结果存入双口RAM由MCU读出显示。

First, the effects of magnetic RAM relaxation time and the rise-time of incident pulse signal on reflection signal are discussed, the relationship between the rise-time of incident pulse and relaxation time based on the energy of reflection signal is revealed. Then, the effects of magnetic hysteric, susceptibilities and saturation upon reflection signal are analyzed, the results reveal the reflection of RAM target and UWB signal design. In the meantime, dielectric relaxation time effect about dielectric RAM target is analyzed simply, and the effects of relaxation time and the width of incident pulse upon reflection signal are probed. Finally, a few RAM targets are measured in the chamber using the impulse radar experiment system which is developed by the team of anti-stealth impulse radar on Department of Electrical Engineering, National University of Defense Technology. The experimental results show the similarity of the rule of echos with the theory. From the compared results of different tagets, we concluded, compared with 15% wideband sinusoidal signal, the impulse signal has increased 10～12dB energy from the same loaded RAM target; this, in turn, shows the nonlinear effects of RAM to the echoes, and the potentiality of the impulse signal to RAM targets.

首先分析了磁性RAM的弛豫时间及入射脉冲信号的上升时间对反射信号的影响，从反射信号能量角度出发，给出了入射脉冲上升时间与弛豫时间的关系；接着分析了磁性RAM的磁滞特性、磁化率及磁化强度对反射信号的影响，给出了RAM目标辐射和有关UWB信号设计的一般性结论；其次，对介电RAM的弛豫时间效应作了简单的分析，探讨了介电弛豫时间及入射脉冲宽度对反射信号的影响；最后利用国防科技大学电子技术系&反隐身冲激雷达技术研究组&研制的冲激雷达实验系统，在微波暗室中对几种不同的RAM目标进行了测量，结果表明：其反射波形的基本规律与上述理论分析相一致；从各种不同目标回波的能量对比结果得出，涂覆RAM目标对冲激信号的吸收比15％带宽的正弦信号要小10～12dB，证实了RAM的非线性效应对回波的影响，也证实了冲激信号反隐身的潜力。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。