查询词典 P type semiconductor

In electronics, an interface between a P-type and N-type semiconductor material; such an interface produces a diode effect

在电子技术中，一种P型和N型半导体材料之间的界面，这种界面可以产生二极管效应。

TheN we subject the semicoNductor to impurity dopiNg, which turNs it iNto either a p-type or aN N-type semicoNductor .

然后我们使半导体经过渗杂，以将其转变成p型或n型半导体。

An N-type epitaxial layer (115), which is formed above an N-type semiconductor substrate (114) in each of a pixel region and a peripheral circuit region; a first P-type well (1) formed above the N-type epitaxial layer (115) in the pixel region; and light receiving regions (117), which are formed within the first P-type well (1) and each of which is a component of a photodiode, are included.

包括在每个像素区域和外围电路区域中的N型半导体衬底114之上形成的N型外延层115；在像素区域中的N型外延层115上形成的第一P型阱1；以及在第一P型阱1中形成的并都是光电二极管部件的光接收区域117。

The first P-type covering layer (61) which composed of P-type nitride semiconductor containing indium and gallium sets contacting with one side of the active layer.

一个由含铝和镓的P型氮化物半导体构成的第一P型覆盖层(61)被设置与有源层的一个面接触。

The second P-type covering layer (62) which is composed of P-type nitride semiconductor containing indium and gallium sets on the first P-type covering layer.

一个由含铝和镓的P型氮化物半导体构成的第二P型覆盖层(62)被设置在第一P型覆盖层上。

CuI is a P-type semiconductor material with 3.2eV bandwidth and stable performance in chemistry and physics. Its resistivity can be changed with concentration, and CuI film is transparent for visible band of light.

CuI是一种高带隙宽度的P型半导体材料，带宽为3.2ev，物理化学性质稳定，制备成本低廉，电阻率可随浓度改变，在可见光范围内透明等优点。

It was shown that TAPP and its metalloporphyrin complexes all had good photoconductivity. The surface photovoltage response in tensity of Soret band and Q band were enhanced with an external positive electric field and weakened with a negative electric field, and possessed the characteristic of p-type semiconductor.

并研究了这些卟啉化合物在不同外加电场条件下的表面光电压谱，结果表明，TAPP及其金属配合物都具有良好的光电性能，且其Soret带与Q带的光伏响应强度随外加正电场光伏响应强度的增加而增强，随外加负电场光伏响应强度的增加而减弱，具有P-型半导体的特征。

In order to provide a photo detector in which the generation of spontaneous noise is suppressed and external noise is effectively reduced, a p-type diffusion layer is provided on the obverse side of an n-type semiconductor substrate, a p-type low-resistance layer is provided on the obverse side of the p-type diffusion layer, a lead frame is provided on the reverse side of the n-type semiconductor substrate with an insulative resin film in between, and the p-type low-resistance layer is electrically connected to the lead frame.

为了提供能够抑制自发噪声的产生并有效地减少外部噪声的光检测器，在n型半导体衬底正面设置p型扩散层，在p型扩散层正面设置p型低电阻层，在n型半导体衬底的反面设置引线框架、中间夹有绝缘树脂薄膜，p型低电阻层电连接到引线框架。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。