查询词典 P type semiconductor

LED is the core of the P-type semiconductor and components of the N-type semiconductor chips.

发光二极管的核心部分是由P型半导体和N型半导体组成的晶片。

The P-type semiconductor and N-type semiconductor between a transition layer.

在P型半导体和N型半导体之间有一个过渡层。

Semiconductor chip is composed of two parts, part of the P-type semiconductor, it inside the hole-dominated, the other side is the N-type semiconductor, here is mainly electronic.

半导体晶片由两部分组成，一部分是P型半导体，在它里面空穴占主导地位，另一端是N型半导体，在这边主要是电子。

A semiconductor chip consists of two parts, one is called P-type semiconductor where holes dominate the region, and the other part is N-type semiconductor where is dominate by electrons.

半导体晶片由两部分组成，一部分是P型半导体，在它里面空穴占主导地位，另一端是N型半导体，在这边主要是电子。

The contact interface surface or immediate area between N-type and P-type semiconductor materials.

p－n结的简称。n型和p型半导体材料接触的界面或接合区称为p－n结。

Establishing the one dimension model of steady heat transfer about semiconductor elements, the result show that the temperature distribution of both n-type and p-type semiconductor are similar and approximately have the linear shape due to small temperature difference and current intensity.

建立了稳态情况下半导体元件的一维传热模型，结果表明n型元件和p型元件内部温度场的分布是相似的，在温度梯度和输入电流较小的情况下，其内部温度场都近似呈线性分布。

LED is the core of the P-type semiconductor and components of the N-type semiconductor chips, the P-type semiconductor and N-type semiconductor between a transition layer, called the PN junction.

发光二极管的核心部分是由 P 型半导体和 N 型半导体组成的晶片，在 P 型半导体和 N 型半导体之间有一个过渡层，称为 P-N 结。

Cuprous oxide (Cu2O) is a direct band gap and is p-type semiconductor with a direct band gap of 2.0 eV, and has been attracted to apply in photoelectric devices and chemical catalysis.

中文摘要氧化亚铜是p-type 直接能隙半导体材，其能带间隙约为2eV，由於材料的优点，使得氧化亚铜在光电设备与化学催化剂的应用上引起相当大的注意。

The C2 selectivity over p-type semiconductor membranes is higher than that over n-type semiconductor membranes and the order of C2 selectivity is consistent with that over p-type semiconductor membranes.

但p型半导体膜上的C2烃选择性比n型半导体膜上的要高；p型半导体膜上C2烃选择性与其电导率大小顺序相一致。

Cuprous oxide (Cu2O) is a direct band gap semiconductor with optical band gap energy of 2.0 - 2.5eV. It is a non-stoichiometric p-type semiconductor. The attractiveness of cuprous oxide as a photovoltaic materials because of its high absorption coefficient in visible regions, non-toxicity, abundantly available starting material on the earth and low cost producibility.

氧化亚铜为直接能隙P型半导体材料，是属於一种非化学计量比缺陷半导体(non stoichiometric defect semiconductor)，光学能隙值约在2.1-2.5eV之间，具有低制造成本、无毒性、起始材料在自然界中含量丰富等优点，并且在可见光范围内具有相当高的光吸收系数，因此主要的应用可用来制造太阳能电池元件。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失