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NAND gate相关的网络例句

查询词典 NAND gate

与 NAND gate 相关的网络例句 [注:此内容来源于网络,仅供参考]

The NAND gate is exactly the same configuration as the NOR function!

在与非门的功能是完全一样的NOR的配置了!

NAND gate both connect to the sam output and can therefore occupy the same well.

到同一个输出端,因此能共用一个阱。

In the model design of protection unit, we realize easy and reliable circuit of protection and checkout with the help of the CPLD technology, and realize the latching circuit with the NAND gate. All these are to avoid the wrong action during the real operation.

在模板的保护单元设计中,在复杂可编程逻辑电路中设计了一种简单可靠的保护校验电路,外加与非门实现的闭锁电路,确保在实际运行中不会产生误动作。

Much the same as the procedure for making a NOR gate behave as a NAND, we must invert all inputs and the output to make a NAND gate function as a NOR.

大致相同的程序让或非门表现为一个与非门,我们必须颠倒所有输和输出,使一个与非门的作为或非门。

Page 32. There are several logic gate configurations, among them the AND gate, NAND gate, OR gate, NOR gate, EXCLUSIVE OR gate and EXCLUSIVE NOR gate.

有几种逻辑门配置,其中包括:与门,非门,或门,或非门、与非门、异或门和同或门。

To prove that we can construct any boolean function using only NAND gates, we needonly show how to build an inverter, AND gate, and OR gate from a NAND (sincewe can create any boolean function using only AND, NOT, and OR).

为了证明使用NAND门我们能够构造任何布尔函数,我们只需要展示如何从一个NAND建立一个转换,与门,或门(因为我们可以用AND,OR,NOT建立任何布尔函数)。

The circuits, including 4 value TTL, NOR gate and NAND gate and AND OR NOT gate and five state gate, are designed by use of bipolar transistors. They have good I/O characteristics, great load capacity and robust noise immunity, and their noise margin may reach±0.6V.

采用双极型晶体管设计出了四值TTL"或非"门、"与非"门和"与或非"门电路及五态门,这些电路均具有较好的输入输出特性、较强的负载能力和抗干扰能力,噪声容限可达到± 0 。6V。

Multiple value logic ; Discrete logic ; 4 value NOR gate ; 4 value NAND gate ; 4 value NAD OR NOT gate ; Five state gate ; DYL circuit

多值逻辑;离散逻辑;四值"或非"门;四值"与非"门;四值"与或非"门;五态门; DYL电路

For the first time, we propose the novel Wrapped-Select Gate SONOS memory with split-control gate in NAND architecture. The memory process is not only simple but also compatible with embedded non-volatile memory in conventional standard logic CMOS products. In this thesis, we demonstrate the physical mechanism and elimination of 2nd bit effect in 2 bit/cell operation.

我们提出一种新颖的分离式闸极结构於含有隐藏式选择性闸极之半导体─氧化层─氮化矽─氧化层─半导体记忆体元件於NAND电路阵列结构上,此记忆体元件不仅制程简单也能符合一般数位逻辑CMOS产品中的嵌入式非挥发性记忆体应用。

Thus, the output will always be driven by a single transistor, either P- channel or N-channel. Since they are as closely matched as possible, the output resistance of the gate will always be the same, and signal behavior is therefore more predictable. Fig. 3.4 CMOS NAND gate One of the main problems with CMOS gates is their speed. They cannot operate very quickly, because of their inherent input capacitance. B-series devices help to overcome these 24 Lesson 3 CMOS Logic Circuit 25 limitations to some extent, by providing uniform output current, and by switching output states more rapidly, even if the input signals are changing more slowly. Note that we haven't gone into all of the details of CMOS gate construction here. For example, to avoid damage caused by static electricity, different manufacturers developed a number of input protection circuits to prevent input voltages from becoming too high. [3] However, these protection circuits don't affect the logical behavior of the gates, so we won't go into the details here. New Words and Phrases 1. CMOS abbr.

略语互补金属氧化物半导体(complementary metallic oxide semiconductor)逻辑,逻辑学,逻辑性,推理方法补充的,补足的,互补的电池供电的门电路,逻辑门,闸门,控制栅,大门,通道,门口,入口伏特,环骑,闪避基础的,基本的,主要的基本原则,基本原理增强型金属氧化物半导体场效应晶体管(metallic oxide semiconductor field effect transistor)反相器,反用换流器,变极器来源,水源,消息来源,原始资料,发起者源,源极排水沟,消耗,排水漏极排出,喝干,耗尽排水,流干,耗尽相同的,相配的,匹配的匹配有效地,有力地,事实上,实际上无限的东西无穷大无穷的,无限的,无数的,极大的接地的正向偏置的,正偏的或非 25 2。

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