查询词典 N type semiconductor

The contact interface surface or immediate area between N-type and P-type semiconductor materials.

p－n结的简称。n型和p型半导体材料接触的界面或接合区称为p－n结。

Establishing the one dimension model of steady heat transfer about semiconductor elements, the result show that the temperature distribution of both n-type and p-type semiconductor are similar and approximately have the linear shape due to small temperature difference and current intensity.

建立了稳态情况下半导体元件的一维传热模型，结果表明n型元件和p型元件内部温度场的分布是相似的，在温度梯度和输入电流较小的情况下，其内部温度场都近似呈线性分布。

Due to the high concentration of Zni, as-grown ZnO is n-type semiconductor. Zni have strong compensation to the p-dopant, so the dopant should be screened in order to obtain effective p-doped ZnO.

我们的计算结果首次从理论上证明了ZnO的自然n型导电性与Zn子晶格的缺陷密切相关，而与氧子晶格的缺陷关系并不明显。

The Sn doped makes the electrical conductivity change from insulator to n-type semiconductor.

用共蒸发法制备掺锡的C60薄膜，发现掺入的Sn原子的薄膜导电性由原来的绝缘体变为N型半导体。

An LED is made from two layers of semiconductor an "n-type" with an excess of negatively charged electrons and a positive "p-type" which has an abundance of "holes" where electrons should be but aren't.

一种被称为N型它具有富余的负级电元子。另外一种被称为P型它同样具有电元子应该有而事实上没有的"洞体"。

It was found for the first time in b-FeSi2 based thermoelectric materials that a p-type semiconductor could change to an apparent n-type one, when the temperature was decreased below a critical temperature.

本项目研究首次在b-FeSi2基热电材料中发现"热伏极性"反转现象，即p-型半导体在某个临界温度以下表现为明显的n-型半导体热电特性。

Discussed the mechanism of macromolecule permeation pellicle. Researched the characteristics and its important effect on gas monitoring of SnO2-majored N type semiconductor gas sensitivity elements.

着重探讨了高分子透气膜的透气机理，研究了以SnO2为主的N型半导体气敏元件的特点及其对气体检测所起的重要作用，给出了单片微机系统的软硬件设计。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

Then in order to further optimize the ambipolar characteristics of devices and improve the carrier transport of OTFT devices,an ultra-thin electron blocking-layer N, N\'-bis-(1-naphthyl)-N,N\'-biphenyl-1,1\'-biphenyl-4,4\'diamine is inserted between C_(60) and pentacene at the basis of the above mentioned devices to adjust the distribution of charge carriers and to limit charge carriers captured by different type semiconductor materials.

本文在原有器件的基础上，在C_(60)和pentacene有源层之间引入一层超薄的N，N\'-bis-(1-naphthyl)-N，N\'-biphenyl-1，1\'-biphenyl-4，4\'diamine电子阻挡层，用以来调节器件内部载流子的分配以及抑制异种半导体材料对异种电荷的俘获。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失