查询词典 Mev

Electrons reach a maximum energy of 1 MeV, and their intensity has a maximum of 100 million per second per square centimeter.

电子达到1兆电子伏的最大能量，它们的密度是最高每秒每平方厘米1亿个。

Less than about 8 meV .

2 ，低于约8兆电子伏。

Solar rays are generally of lower energy, below 20 MeV (which is still high energy in earth terms).

太阳射线基本上有着较低的能量，在20兆电子伏以下。

A PLC based control system for 3.0 MeV high frequency high voltage electron accelerator was presented.

描述了基于PLC的高频高压电子加速器的计算机监控系统。

This telescope has been used in P+ 20 Ne reaction and has identified a 0.695 MeV ...

望远镜已用于P＋20Ne反应中探测低能α粒子，得到了很好的△E－E双维谱。

As the bombarding energy rises up to 30-100 MeV/u, the nucleon-nucleoncollision begins to play an important role.

当能量继续升高至30—100MeV／u以上，核子—核子的碰撞作用开始起较大的影响。

Spectra of highly charged oxygen ions were measured using Spectra pro-500i monochromator equipped with CCD in the region between 200 and 300 nm.

1引言在波长范围270 nm~660 nm的氧的束箔光谱首次观测是Bashkin等人利用1和2 MeV的束能进行的[1，2]。

Zinc oxide is an n-type direct band-gap semiconductor material. Due to the large exciton binding energy of 60 meV, which ensures the large exciton emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet blue light emitting device.

氧化锌是直接带隙宽禁带半导体材料，具有较高的激子束缚能(~60meV)，可以实现室温下的紫外受激辐射，在紫外发射器件等领域具有广阔的应用前景。

The enhanced emission yields of secondary ions induced by Si2 clusters at the low energies are clearly seen and attributed to the vicinage effect of the nuclear collision processes of cluster constituents and the secondary ion emissions are still dominated by electronic stopping processes at high energies.

实验结果显示，在以上的生物样品中，MeV能量离子的能量损失值和TRIM程序模拟的结果相吻合，但是透射离子的能量离散值却与TRIM程序模拟结果有很大的不同。结合生物样品的结构不均匀的特性，对Bohr能量离散理论进行了修正，并发现修正后的Bohr能量离散理论计算结果与实验值符合得很好。

Since it has many special mechanical,optical, electrical, magnetic, calorifics and chemical properties which differ from thecorresponding bulk materials due to its size effect, surface effect and quantum effect,as a wide band gap semiconductor material with large exiton binding energy of 60meV at room temperature, it is attractive for many new applications in industry andhigh-tech fields.

由于ZnO是一种直接带隙的半导体材料，室温下能隙宽度为3.37 eV，激子束缚能高达60 meV，具有优良的物理和化学性质，其显著的表面效应、量子尺寸效应和宏观量子隧道效应，是目前光电子研究领域的热点。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。