查询词典 MOS

When modeling the floating gate potential, the effect of the parasitical field capacitance to the floating gate potential is considered, and the model is verified by the simulation results and the measured results.

建立了神经元MOS的HSPlCE模型，在对浮栅电势建模时考虑了场寄生电容对浮栅电势的影响，并对模型进行了验证，为神经元MOS电路的设计提供了更精确的模拟手段。

The reorientation of an as-deposited random oriented coating into a basal orientation has been reported in literature.

对不同取向MoS〓涂层的转移膜及其对MoS〓涂层在微动磨损过程中摩擦学性能的影响进行了讨论。

For MOS capacitors, the saturation current is mainly attributed to the electron-hole pair recombination mechanism. But for MOS capacitors, the saturation current is mainly attributed to the electron-hole pair generation mechanism, and is also controlled by interface trap densities, bulk traps, and suboxide.

对於N型矽基板上的氧半电容而言，其饱和电主要为电子电对在界面及空乏区的合机制，但是对於P型矽基板上的氧半电容而言，其饱和电受控於空乏区内电子电之产生与表面陷阱电荷，矽基板内缺陷，还有次氧化层。

Administration of ZA q 6 mos for up to 36 mos was safe and well tolerated.

唑来膦酸每6月一次持续36月的治疗是安全的而且耐受性很好。

ABSTRACT Power MOSFET and MOS controlled thyristor play a growing important role in the field of high frequency power electronics.

功率MOSFET和MOS控制的晶闸管在高频电力电子技术领域越来越发挥着重大的作用。

Resistance is about 5 times the resonance resistance.(3)The Rd in the circuit diagram is indispensable when used in a C-MOS oscillation circuit.

3当使用C-MOS振荡器时(见图7)线路图中的Rd是必要的。

Brand has operated yageo, Fenghua, TDK, AVX, KEMET, such as well-known brands of capacitors, resistors, inductors, tantalum capacitors and IR, MOTOROLA, ST and other well-known brands Second transistor, MOS, etc..

经营的品牌有国巨、风华、TDK、AVX、KEMET等知名品牌的电容、电阻、电感、钽电容和IR、MOTOROLA、ST等知名品牌二三极管、MOS管等。

Went to the Mos Def show last night. You might recognize him from movies like Hitchhikers Guide and 16 Blocks.

昨晚去看了Mos Def 的Show，你应该在电影《银河系漫游指南》和《勇闯16 街区》看过他的表演。

There was an surge expression of MOS before germinal vesicle breakdown and at the same time began to disperse towards cytoplasm.

c-mos基因在动物卵母细胞减数分裂调控中起作用，但其作用机制目前仍不清楚。

With Linear Time-Invariant modeling of phase noise and definition of"effective resistor", we analyze the critical parameters of the circuit and calculate the value of phase noise at the 1 /f~2 region. 3. A 4.2GHz VCO tuned by an accumulation-mode MOS varactor in TSMC 0.35μm SiGe BiCMOS process is obtained after debugging with the simulator SpectreRF.

以低压、低功耗、低相位噪声和较大调谐范围的设计目标对压控振荡器进行设计优化，最后得到由积累型MOS变容管调谐的压控振荡器，电源电压为1.5V，功耗约10mW，中心频率为4.2GHz，调谐范围为28%，在频率偏移量为600kHz处的相位噪声为-128dBc/Hz，与线性时不变模型下的理论推导结果非常接近。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。