查询词典 MOS

An analytic expression about FN tunneling current has been obtained using the WKB approximation,as well as the barrier that includes a transition region,which can be applied to estimate the width of barrier transition region for the gate oxides of thin MOS structures.

给出了一种利用WKB近似所得的处理电子隧穿存在转变区势垒的过程，并得到一个FN电流的分析表达式。

Corporals are more common amongst the Combat Arms, but many Combat Support MOS's may have them.

下士通常是在作战单位中，但许多担任作战支援的军事专业岗位上也有他们的身影。

En didn't I bust up agin a lot er dem islands en have a turrible time en mos' git drownded?

难道我没有在那些小岛上东撞西撞，吃足了苦头，差一点儿给烟死？

Accumulation varactors are used to widen frequency tuning.The measured tuning range is 23 percent.

可变电容采用增强型MOS可变电容，取得了23％的频率调节范围。

In this thesis, there are two types of varactors used in the VCO: one is the Philips' BB135 p-n junction capacitor; the other is Al/HfO2/Si capacitor with HfO2 dielectric. Because the dielectric constant of HfO2 is larger than that of SiO2, the capacitance of Al/HfO2/Si capacitor will be larger than that of MOS capacitor with the same thickness and area. Therefore, there will be larger unit voltage for adjusting the ratio of the capacitance values of the capacitors.

在本论文实验的VCO电路中之可变电容有2种：一种是飞利浦厂商所提供型号为BB135之P-N接面电容；第二种是自制的Al/HfO2/Si电容是使用二氧化铪（HfO2）来做为电容的介电材料，因为HfO2介电常数比氧化矽（SiO2）大，目的是要在相同厚度以及面积下，就可以有较大的电容值，希望能藉此有较大的单位电压改变电容值的比值。

The accumulation -mode varactor, which has a higher quality factor value than the inversion-mode MOS varactor, is studied in detail.

考虑压控振荡器设计指标的相互约束条件，尽可能减小相位噪声的来源，设计电路的拓扑结构。

Known to many as a pirate city, Mos Eisley is one of the largest spaceports on Tatooine.

莫斯·艾斯雷是塔土因上最大的港口，众所周知的海盗城市。

With the combination of analysis and software simulation, the operation principles of different parts of the network are analyzed. Especially, the model of the oscillator, based on negative resistance cross-coupled pair, is given. Meanwhile, the effect of different crossed-coupled pair to the oscillation circuit is also analyzed.

利用理论分析与软件仿真相结合，详细分析了基于CMOS工艺的二分之一波长驻波振荡电路各组成部分的工作原理，尤其是振荡器的重要组成部分，提供负阻的交叉耦合对，给出了相应的数学模型及分析仿真，研究了不同的MOS管对对振荡电路的影响。

It was found that gate voltage swing was 9V for MOS-HEMTs and 5.5V for MES-HFETs, respectively.

我们也发现到金氧半异质结构场效电晶体的闸极摆幅电压为9V，而金半异质结构场效电晶体则为5.5V。

A curious side-step in the biology of Talz occurred in the short-story "Play it Again, Figran D'An: The Story of Muftak and Kabe" by A.C.

1995年Bantam Books出版的《莫斯埃斯利酒馆故事》（Tales form the Mos Eisley Cantina）一书中，A.C。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。