查询词典 MOS

Because of the rapid development of the wireless communication technology, the design and research of the integrated circuits in the related field has gained more and more attention in recent years. And with the advance of the IC process technology, the cutoff frequency of MOS devices can reach several giga herz or more. It is a trend that CMOS process will replace the III-V compound process such as gallium arsenide or silicon bipolar process which were dominant in the fields of radio frequency and microwave.

近年来，由于无线通信技术的飞速发展，相关领域的集成电路的设计研究也受到越来越多的关注；同时由于工艺技术的不断进步，MOS器件的特征频率也可以达到几个GHz或更高的水平，原来在射频、微波领域占主导地位的三五族化合物半导体工艺如砷化镓及硅双极型工艺也有逐渐被CMOS工艺所取代的趋势。

Bits MOS ROM is used as character generator.

2240位 MOS ROM用作字符发生器。

Experimental results show that the correlation between the result of the proposed approach and MOS is up to 0.91 in close-set test and 0.88 in open-set test.

实验结果表明，所提算法获得的评测结果与主观MOS评价之间的相关度，在闭集测试时可达0.91，在开集测试时可达0.88。

In this thesis, we have successfully utilized the combination of MOS and HBT to design negative differential resistance circuit, which is called as MOS-HBT-NDR circuit.

在本论文中，我们已经成功利用MOS与HBT的组合来设计负微分电阻电路，我们称此负微分电阻电路为MOS-HBT-NDR电路。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The numerical results revealed the following phenomena: For the linear sweep voltage, the field-enhanced effect retards the progress of the MOS capacitance, and the lower voltage sweep rate, the larger influence of fieldenhanced effect.

数值分析首次揭示了下述现象：对于线性电压扫描作用下MOS结构的电容瞬态特性：电场增强产生效应阻碍着MOS结构电容的下降，这种作用在较低的电压扫描率下更明显。

After 44 h IVM, MOS level in the immatured ooeytes was higher than matured oocytes, and there was less MOS in nucleus than in the cytoplasm at 6 h after matured oocytes were activated; RNAi was performed before IVM, and all the three siRNA applied could successfully knockdown the level of c-mos mRNA, which were 0.08 ± 0.03, 0.11 ± 0.06 and 0.20± 0.06 times of the control group respectively, and the quantity of MOS was obvious decreased compared with the control group at the same stage.

本实验通过RT- PCR、免疫荧光激光共聚焦检测方法检测了猪卵母细胞在体外成熟培养过程中c-mos基因在转录水平、翻译水平上的表达以及蛋白的分布，并应用注射小干扰RNA方法对其进行了RNA干扰研究。

In this dissertation, the nonlinearity of the MOS varactors caused by the large output signal of the DCO, as well as its influence on the performance of the DCO, is analyzed. A back-to-back in series digitally controlled MOS varactor is presented to avoid the nonlinearity of the varactors of the DCO.

对DCO大信号工作时所引起的数控MOS变容管的非线性以及这种非线性对DCO性能的影响进行了分析，提出了改善这种非线性的背靠背串联数控MOS变容管的新结构，可以使DCO的相位噪声最多降低8.1dB。

In this dissertation, the research and design of DCO is conducted and the principal contributions are as follows.In this dissertation, the non-ideal characteristics of traditional MOS varactors used in the DCO are analyzed, and an inversion-mode digitally controlled MOS varactor is proposed to alleviate the non-ideal characteristics. The phase noise of the DCO using inversion-mode varactors can be up to 9.5 dB lower than that of the DCO using traditional MOS varactors.

本论文针对应用于CMOS无线通信收发机的新型全数控LC振荡器，完成了以下工作：分析了DCO所使用的普通数控MOS变容管中所存在的非理想特性，提出了使用反型数控MOS变容管改善这一非理想特性的方法，该方法可以将DCO中的相位噪声最多降低9.5dB。

Some of the hard disk LSI circuit is made of MOS technology, MOS circuits are particularly sensitive to static electricity, electrostatic induction was susceptible to breakdown damage, so pay attention to the issue of anti-static.

硬盘电路中有些大规模集成电路是MOS工艺制成的，MOS电路对静电特别敏感，易受静电感应而被击穿损坏，因此要注意防静电问题。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。