查询词典 MOS

After 44 h IVM, MOS level in the immatured ooeytes was higher than matured oocytes, and there was less MOS in nucleus than in the cytoplasm at 6 h after matured oocytes were activated; RNAi was performed before IVM, and all the three siRNA applied could successfully knockdown the level of c-mos mRNA, which were 0.08 ± 0.03, 0.11 ± 0.06 and 0.20± 0.06 times of the control group respectively, and the quantity of MOS was obvious decreased compared with the control group at the same stage.

本实验通过RT- PCR、免疫荧光激光共聚焦检测方法检测了猪卵母细胞在体外成熟培养过程中c-mos基因在转录水平、翻译水平上的表达以及蛋白的分布，并应用注射小干扰RNA方法对其进行了RNA干扰研究。

In this dissertation, the research and design of DCO is conducted and the principal contributions are as follows.In this dissertation, the non-ideal characteristics of traditional MOS varactors used in the DCO are analyzed, and an inversion-mode digitally controlled MOS varactor is proposed to alleviate the non-ideal characteristics. The phase noise of the DCO using inversion-mode varactors can be up to 9.5 dB lower than that of the DCO using traditional MOS varactors.

本论文针对应用于CMOS无线通信收发机的新型全数控LC振荡器，完成了以下工作：分析了DCO所使用的普通数控MOS变容管中所存在的非理想特性，提出了使用反型数控MOS变容管改善这一非理想特性的方法，该方法可以将DCO中的相位噪声最多降低9.5dB。

In this thesis, we have successfully utilized the combination of MOS and HBT to design negative differential resistance circuit, which is called as MOS-HBT-NDR circuit.

在本论文中，我们已经成功利用MOS与HBT的组合来设计负微分电阻电路，我们称此负微分电阻电路为MOS-HBT-NDR电路。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

For MOS capacitors, the saturation current is mainly attributed to the electron-hole pair recombination mechanism. But for MOS capacitors, the saturation current is mainly attributed to the electron-hole pair generation mechanism, and is also controlled by interface trap densities, bulk traps, and suboxide.

对於N型矽基板上的氧半电容而言，其饱和电主要为电子电对在界面及空乏区的合机制，但是对於P型矽基板上的氧半电容而言，其饱和电受控於空乏区内电子电之产生与表面陷阱电荷，矽基板内缺陷，还有次氧化层。

Administration of ZA q 6 mos for up to 36 mos was safe and well tolerated.

唑来膦酸每6月一次持续36月的治疗是安全的而且耐受性很好。

A7800 Features: 10 Mb s Manchester encoding decoding with receive clock recovery Patented digital phase locked loop decoder re- quires no precision external components Decodes Manchester data with up to g18 ns of jitter Loopback capability for diagnostics Externally selectable half or full step modes of opera- tion at transmit output Squelch circuits at the receive and collision inputs re- ject noise High voltage protection at transceiver interface (16V) TTL MOS compatible controller interface Connects directly to the transceiver cable A7800 Maximum Ratings: A7800 Pinout:· NPT IGBT technology · low saturation voltage · low switching losses · switching frequency up to 30 kHz · square RBSOA, no latch up · high short circuit capability · positive temperature coefficient for easy parallelling · MOS input, voltage controlled · ultra fast free wheeling diodes · solderable pins for PCB mounting · package with copper base plate

A7800特点： 10兆s曼彻斯特编码与接收时钟恢复专利解码数字锁相环解码器重新奎雷斯没有精确数据的外部元件曼彻斯特解码高达全部G18抖动纳秒环回功能用于诊断外部可选的一半或整步模式的歌剧和灰在传输和接收碰撞投入重新ject高噪音在收发器接口（16V的）马鞍山的TTL兼容控制器接口电压保护输出静噪电路直接连接到收发器的电缆 A7800最大额定值： A7800引脚说明：·不扩散核武器条约IGBT技术·低饱和电压·低开关损耗·开关频率可达30千赫·平方米RBSOA，没有锁定了高短路能力··正温度，便于parallelling·马鞍山消耗系数，电压控制·超高速免费·印刷电路板焊接的引脚安装·铜底板包续流二极管

In this dissertation, the nonlinearity of the MOS varactors caused by the large output signal of the DCO, as well as its influence on the performance of the DCO, is analyzed. A back-to-back in series digitally controlled MOS varactor is presented to avoid the nonlinearity of the varactors of the DCO.

对DCO大信号工作时所引起的数控MOS变容管的非线性以及这种非线性对DCO性能的影响进行了分析，提出了改善这种非线性的背靠背串联数控MOS变容管的新结构，可以使DCO的相位噪声最多降低8.1dB。

Some of the hard disk LSI circuit is made of MOS technology, MOS circuits are particularly sensitive to static electricity, electrostatic induction was susceptible to breakdown damage, so pay attention to the issue of anti-static.

硬盘电路中有些大规模集成电路是MOS工艺制成的，MOS电路对静电特别敏感，易受静电感应而被击穿损坏，因此要注意防静电问题。

Effects of MOS, ST and Chlortetracycline on broiler performance and intestinal bacterial colonies were compared by feeding trial and microbiological trial in order to determine effectiveness of MOS and ST as substitute of CTC.

本研究通过饲养试验和微生物试验比较了甘露寡糖、糖萜素和金霉素对肉仔鸡生产性能及肠道菌群的影响，以期探讨甘露寡糖和糖萜素在肉仔鸡饲粮中替代金霉素的效果。

Finally it offers the analysis of the fault-tolerance system as well as its test verification.

这样，运行于空间环境中的系统的设计目标就是在保证系统实时性

However, it is still difficult to find out the real reason of the increase of the keratinized gingiva during the orthodontic extrusion whether it is due to the proliferation of the gingival tissue or to its elastic nature, that is because the proliferation of the fibroblasts as well as the connective tissue changes in volume and the intra-fibers spaces were all immeasurable in most of the studies.

然而，仍然难以找到真正的原因增加的角化牙龈在正畸挤压它是否是由于扩散的牙龈组织或其弹性性质，这是因为增殖的成纤维细胞以及作为结缔组织的变化量和内部纤维空格都是不可估量的，大多数的研究。