查询词典 ITO

The electric field induced decomposition of ITO and electromigration of indium are responsible for the catastrophic failure, or thermal breakdown, of OLEDs. 5. Because of the importance of Si-based optoelectronics, We use p-type Si instead of ITO as the anode to fabricate OLEDs.

通过观察我们可以判定OLEDs器件的热击穿是由于其内部形成了严重的短路，而在高的正向驱动电压下器件严重短路的原因是器件内部本身存在的不均匀和ITO电极在高电场的作用下分解出的金属In沿着这些不均匀的位置在有机层电迁移扩散。

The effects of hydrothermal process parameters on the prepared ITO crystal were investigated, such as hydrothermal temperature, hydrothermal time, mineralizer and medium.

探索了水热反应条件：反应温度、反应时间、矿化剂和反应介质对制备ITO晶体的影响，在实验的上限温度(00℃)内不能用水热法直接制备出ITO晶体。

But if addition of static field was overhigh,RhB would directly take place electric oxidation, ITO/TiO_2/CdS composite films justacted as a conductive electrode with very large resistance, so the degradation rate ofITO/TiO_2/CdS composite films to RhB reduced instead.

如果外加电位过高，RhB就会直接发生电氧化，ITO／TiO_2／CdS复合薄膜只是作为一个电阻很大的电极来导电，所以本应该作为催化主体的ITO／TiO_2／CdS复合薄膜对RhB的降解率反而降低。

The electrical resistivity as low as 1.7×10-4Ω·cm was obtained, and the average total visible light transmittance of the IMO film with the glass substrate was over 80%. Plasmatic wavelength method, van der Pauw method and optical spectra fitting method were applied to measure and compare the carrier concentrations of IMO and ITO.

采用等离子振荡波长法、van-der-Pauw法和光谱拟合法等三种方法对IMO薄膜和ITO薄膜的载流子浓度进行了测量和比较，结果表明IMO薄膜的载流子浓度还不到ITO薄膜的三分之一。

The sequence of effects of these three dispersants on the stability of ITO suspension is PVP＞β-alanine＞triammonium citrate, which is in agreement with the sequence of their acidity and alkalinity in the suspension.

结果表明：3种分散剂分散机制均为静电和空间位阻稳定作用；在相对ITO粉体质量比为5%、最佳球磨分散时间为48 h时，在15 d内ITO浆料的RSH可维持在10%以内；3种分散剂对ITO浆料稳定性的影响由强至弱的顺序为：聚乙烯吡咯烷酮＞β-丙氨酸＞柠檬酸三铵，与其在溶液中酸碱性强弱顺序一致，其中聚乙烯吡咯烷酮的分散效果最好。

Crystallite grows up when being annealed. With increase of Sn2+ concentration and use of ITO substrate this trend along(101) become obvious. Besides, crystallization of sample produced by SnCl2 solution of 0.1mol/l is better than that by SnCl2 solution of 0.2mol/l and glass substrate is more propitious to crystallization of SnS films than ITO substrate.

Sn2+浓度的增加以及ITO衬底明显有利于晶粒沿(101)晶面结晶。0.1mol/l的SnCl2溶液制备出的样品较0.2mol/l的SnCl2溶液制备出的样品结晶性更好，玻璃衬底较ITO衬底更有利于SnS的结晶。

In the many factors that influence the quality of CdS deposition, the surface roughness of substrata is the important one. Exactly, SnO〓/glass substrata are the best, the glass substrata are the better, and ITO/glass substrata are not good for deposition of CdS polycrystalline thin films.

值得一提的是，沉积在ITO玻片上的CdS膜多呈六方相，而沉积在玻片上的CdS膜多呈立方相：然而，采用真空蒸发法制备的CdS薄膜，无论衬底是玻片，还是ITO玻片，其沉淀相均为六方相。

In the recent yeas ,with the developing of consumptive electronic products, the LCD displayers have been wildly used, it also provide extensively markets for the ITO Conductive Glass, and the demands increase 20% each year.

近年来，随着消费类电子产品的发展，液晶显示器得到了广泛地应用，这就为ITO导电膜玻璃提供了广阔的市场空间，世界范围的ITO导电膜玻璃年需求量每年增长20%以上。

We adopted DCJTB and TBPe to make two homochrom OLEDs as the red and blue dyes, the configurations are respectively as follows: ITO/CuPc(15nm)/NPB(50nm)/Alq3(30 nm):rubrene: DCJTB(6.1)/Alq3(30nm)/LiF(1nm)/Al(100nm),(x=2,3.7,4.2,5 nm,the dopped concentration is 1.1%,2.1%,2.3% and 2.8% respective -ly) for red OLEDs and ITO/CuPc(150 nm)/NPB(500 nm)/ADN(300 nm):TBPe(30 nm)/Alq3(350 nm)/RbF(20 nm)/Al(1,000 nm)for blue OLED. We discussed the electroluminescent mechanism and the infection of the dopped concentration of rubrene on the perform -ances of red OLEDs; And after a lot of designments and manufactures we found an integrated and reasonable scheme,and carried out some test -ings and discussions on the characteristics of current -voltage curve, efficiency- voltage curve and luminescence-spectrum curve and so on. Subsequently,we made two kinds of WOLEDs.

然后分别采用以DCJTB和TBPe作为红色、蓝色发光染料制作了两种单色OLED器件，制备了器件结构为ATO/CuPc(15nm)/NPB(50nm)/Alq3(30 nm)：rubrene：DCJTB(6.1 nm)/Alq3(30nm)/LiF(1nm)/ Al(100nm)，(其中x=2、3.7、4.2、5nm，rubrene的掺杂比例为1.1%、2.1%、2.3%、2.8%)的红光OLED器件和结构为ITO/CuPc(150 nm)/NPB(500 nm)/ADN(300 nm)：TBPe(30 nm)/Alq3(350 nm)/RbF(20 nm)/Al(1，000 nm)的蓝光OLED器件；讨论了红光OLED器件的发光机理，以及rubrene的掺杂浓度对发光效率等性能的影响；从蓝光器件的设计和制备入手，摸索出了一套完整而可行的制作方案，分别对器件的电压-亮度特性、电压-发光效率特性及发光光谱等特性进行了测试与讨论。

When the thickness of ITO was 210 nm, the Alq3 based TOLED exhibited a narrowed Electroluminescent peak at 536 nm with a full width at half maximum of 22 nm, of (0.229, 0.729) and an efficiency of 1.77cd/A. 2. With Alq:DCJTB/TBADN:TBPe/Alq:C545 as white light-emitting layer, RBG tricolor TOLEDS were achieved by adjusting the thickness of ITO. We obtained the peak wavelengths at 603nm, 475nm and 538nm, CIE coordinates of (x=0.513, y=0.360),(x=0.133, y=0.201) and (x=0.335, y=0.567), FWHMs of70nm, 30nm and 48nm for red, blue and green, respectively.

以多层结构Alq：DCJTB/TBADN：TBPe/Alq：C545为白光发光层，通过调节ITO的厚度，实现了红、蓝、绿三基色发光的顶发射微腔器件；当ITO的厚度分别为240nm、180nm、215nm时，器件发光峰值为603nm、475nm、538nm时，色坐标为(X=0.513，y=0.360)、(x=0.133，y=0.201)和(x=0.335，y=0.567)，半高宽为70nm、30nm、48nm。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失