查询词典 ITO

Guanine can quench the phthalhydrazidylazoacetylacetone's ECL in acid medium, and the linear concentration range of guanine relative to the ECL intensity is from 2.0×10~(-6) to 1.0×10~(-5) mol/L.The mechanism of phthalhydrazidylazoacetylacetone's ECL on the surface of ITO glass has been discussed according the experimental phenomenon.The phenomenon of ITO self-luminescence has also been studied.It has been found that the machanism of phthalhydrazidylazoacetylacetone on the surface of ITO in different medium is dissimilarity. The phenomenon of ITO self-luminescence may be caused by the interaction of the active oxygen element and ITO's surface.

鸟嘌呤在弱酸性介质中3-(1-乙酰丙酮偶氮)苯二甲酰肼的电化学发光具有显著的淬灭作用，2.0×10~(-6)～1.0×10~(-5) mol/L浓度范围内，电化学发光强度与鸟嘌呤的浓度成良好的线性关系根据相关试验现象对3-(1-乙酰丙酮偶氮)苯二甲酰肼在氧化铟锡玻璃电极上的电化学发光机理进行了初步探讨，并对氧化铟锡玻璃电极自身发光现象进行了研究，研究发现在不同酸度环境中，3-(1-乙酰丙酮偶氮)苯二甲酰肼在氧化铟锡玻璃电极上电化学发光的机理是显著不同的；ITO自身发光可能是由活性氧系分子与ITO镀膜玻璃电极表面相作用引起的。

By employing the local Lipschitz condition and Picard sequence, the local existence-uniqueness of solutions of stochastic functional differential equations of Ito-type is firstly obtained. Furthermore, a continuation theorem for stochastic functional differential equations of Ito-type is given by using stochastic analysis technique and the quasi-boundedness condition. Finally, by establishing some delay differential inequalities and using properties of H_m-functions, a stochastic version of Wintner theorem and the global existence-uniqueness of solutions of stochastic functional differential equations of Ito-type are given. The results generalize the earlier publications.

首先，利用局部Lipschitz条件和Picard序列，获得了伊藤随机泛函微分方程解的局部存在唯一性；其次，利用随机分析技巧和拟有界条件，建立了伊藤随机泛函微分方程解的延拓定理；最后，通过建立一些时滞微分不等式和利用H_m-函数的特性，得到了Wintner定理的随机版本和伊藤随机泛函微分方程解的全局存在唯一性，推广了已有的一些结果。

A structure of C/ TiO2/ITO and ITO/TiO2/ITO were used to test the photoconductivity of TiO2 thin film using a black light lamp as light source.

以黑光灯为光源，采用ITO/TiO_2/ITO和C/TiO_2/ITO结构通过光电流测量了锐钛矿相TiO_2薄膜的紫外光响应。

The Ito inactivation curve of M cells shifted in the hyperpolarization direction, while the Ito inactivation curves of Epi and Endo shifted in the depolarization direction. There were no significant differences in the Ito recovery curves from inactivation among the three subtypical cells.

V曲线呈时间依赖性下移，Endo呈时间依赖性上移，M细胞先上移然后下移；M细胞的Ito失活曲线左移，而Epi和Endo右移；模拟缺血3层细胞的Ito失活后再恢复无明显差异。

The result showed that the carrier concentration of IMO was less than one third of that of ITO.So,the absorptance of visible light in IMO is lower than in ITO,there might br more space to improve the conductivity of IMO.

因此，IMO薄膜对可见光的吸收小，有很大的发展空间可以通过提高载流子浓度而进一步提高电导率，对近红外线也有较高的透射率，有利于拓展透明导电薄膜的应用领域。

A three-mask chip process was first attempted in this work, where the 3rd mask was designed to evaporate the identical metal films for p- and n-pads. However, it was found that the Cr film showed inferior adhesion property on the ITO current spreading layer after the peeling test. In order to overcome this problem, a contact aperture was opened in the mask of ITO layer.

改为三道光罩后，P、N电极使用同一道光罩，并蒸镀相同的金属，但实验后发现，铬和氧铟锡的附著性并不好，经黏贴测试后，发现有电极剥落的情形，所以我们在透明导电层的光罩上，做了个圆孔的设计，这个圆孔的设计可以得到二个优点。

Finally, a two-mask process was attempted to extend the same concept of the chip process. Here the mask of the contact aperture was replaced by the mask of the LED pad. After etching the SiO2 and ITO in the aperture region, a lateral etch of SiO2 was made to increase the ITO contact area. Although the forward voltage of the GaN LED shows a normal value, the process yield is still low and requires further study.

二道光罩制程延伸了三道光制程的理念，只是因为透明导电层的圆孔图形，是用电极的光罩去开的，所以蚀刻完二氧化矽膜及氧化铟锡膜后，必须再做二氧化矽膜的回蚀刻，让二氧化矽再内缩进去，以增加氧化铟锡和电极的接触面积，不会造成发光二极体的顺向电压提高，但因制程良率太低，所以还须要继续研究改善。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

The electric field induced decomposition of ITO and electromigration of indium are responsible for the catastrophic failure, or thermal breakdown, of OLEDs. 5. Because of the importance of Si-based optoelectronics, We use p-type Si instead of ITO as the anode to fabricate OLEDs.

通过观察我们可以判定OLEDs器件的热击穿是由于其内部形成了严重的短路，而在高的正向驱动电压下器件严重短路的原因是器件内部本身存在的不均匀和ITO电极在高电场的作用下分解出的金属In沿着这些不均匀的位置在有机层电迁移扩散。

Compared with other methods, the present solvent thermal method can produce ITO nano-powders with high purity and uniform particle size. The manipulation is very simple and convenient and no calcination process is needed. The reaction temperature can be as low as 190 ℃, which is by far the lowest temperature in ITO nano-powder preparation. The sample also gives a good dispersion property benefited from the unique solvent thermal reaction environment.

结果表明，制备的ITO纳米粉体为立方晶相，粉体的平均颗粒小于100 nm；与已有的ITO纳米粉体制备方法相比，本溶剂热法制备过程无需高温烧结、流程简单，反应过程所需的温度可低至190 ℃，是迄今为止文献报导制备ITO的最低温度，同时所得产物纯度高、粒度均匀、分散性很好。

Apllied the data of QuickBird-2——the highest resolution remote sensing,and based on the theory and methodology of fractal geometry,we have quantitatively studied remote sensing lineations in Gaolong gold deposit of Guangxi.

采用Quick Brid-2高分辨率卫星遥感数据，通过分形几何学的盒计维数法，定量研究广西高龙金矿区遥感线性构造。

So, sometimes, to change the color can not be your food (referring to the above-mentioned crustacean) has been a sign of boiling over.

所以，有时，来改变颜色，不能你的食物一直是沸腾了的迹象。