查询词典 INP

Auger electron spectroscopy and X-ray photoelectron spectroscopy were used to study the surface and the interface of the contacts.

实验结果表明在室温下InP中的In就可以扩散到接触的表面，退火后Au的价态升高，AuxIny合金中In的含量增加。

The quaternary GalnAsSb can be used for the bolometer, IR radar, monitoring of the environment, trace gases and other interesting purpose for its special response wavelength. GalnAsSb infrared detectors are novel compound detectors with advantages of fast response, high sensitivity, high stability, low price, especially its character to work at room temperature.

当其晶格参数与InP衬底的晶格参数相匹配时，其覆盖波长基本不变(1.6～1.7μm)：但是匹配于InAs衬底时，覆盖波长从1.7μm变到3.4μm；而与GaSb衬底晶格匹配时AlGaAsSb、GaInAsSb四元系化合物材料可以覆盖从1.7μm至4.3μm的波段，所以GaInAsSb四元系化合物材料在红外成像、红外技术方面有重要的实用价值，同时在未来的超低损耗光纤通信中也具有潜在的应用。

The incidence area of PIN-PD is 22 22μm2, InP-based HBT is 3μm size style, the square resistance of NiCr resistance is 100, the amplifer circuit is transimpedance feedback amplifer with one stage common emitter and output buffer circuits.

探测器台面面积为，HBT采用3工艺，NiCr电阻的方阻值为100，放大电路形式采用跨阻反馈单极共射加输出缓冲电路。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

Indium Phosphide is a kind of important semiconductor material.

InP以其众多的优越特性而在许多高技术领域有着广泛的应用。

A brief visual analytical form of temperature distribution on a finite double material irradiated by a continuous wave laser is presented under the third boundary condition in one dimensional heat conduction.

在一维热传导问题的第三类边界条件下，给出激光辐照有限厚双层材料Zn InP温度分布的一种直观简洁的解析形式。

Positron Lifetime experiments were performed in plastically deformed and undeformed Zn-doped p-type GaAs to investigate deformation-induced point defects.

在n型和SI型InP中，V〓和V〓均捕获正电子，但在p型InP中，正电子只探测到了V〓。

The research was focused on application of well-developed metal damascene to copper microfabrication on GaAs and InP substrates and also verification of feasibility.

本研究将使用在矽制程上已相当成熟的金属镶嵌技术运用於砷化镓及磷化铟基材之铜金属化制程中，验证其可行性。

Electron irradiation induced defects in InP material which has been formed by high temperature annealing undoped InP in different atmosphere have been studied in this paper.

对不同气氛下高温退火非掺杂磷化铟材料的电子辐照缺陷进行了研究。

The InP nanocrystallite was prepared by reflowing and annealing of organic solvent. The 55nm average diameter of InP nanocrystallits was obtained by calculating X-ray diffraction spectrum.

用有机溶剂回流退火法制备出了磷化铟纳米晶，并通过XRD谱计算出平均粒径为55nm。

Lugalbanda was a god and shepherd king of Uruk where he was worshipped for over a thousand years.

Lugalbanda 是神和被崇拜了一千年多 Uruk古埃及喜克索王朝国王。

I am coming just now,' and went on perfuming himself with Hunut, then he came and sat.

我来只是现在，'歼灭战perfuming自己与胡努特，那麼，他来到和SAT 。