查询词典 INP

The result of positron lifetime and Doppler broadening measurements is used to discriminate the native defects in p-type GaAs and InP with different growth technique and carrier concentration.

用正电子寿命及多普勒展宽测量来鉴别不同载流子，不同生长方法生长的p型GaAs和InP中的本征缺陷。

The GaAs, InP-based III-V compound semiconductors, which are known as their wide band-gaps, direct-band transition, high photoelectric conversion efficiency and high saturated electron drift velocity and mobility, become increasingly important and have been widely used in microelectronics and optoelectronics.

以GaAs，InP为主Ⅲ-V族化合物半导体材料具有很宽的带隙，大都为直接跃迁型能带，光电转换效率较高，以及具有很高的饱和电子漂移速度和迁移率。

An InP HEMT with saw-toothed source and drain is described.

从优化器件结构的角度，提出了一种锯齿型源漏的新型InP基HEMT器件。

Based on the theory of stimulated polariton scattering, adopting reported experimental conditions that generate tuning terahertz wave utilizing nonlinear optical parametric oscillation as the theoretical analysis model, taking GaAs, GaP, InP, ZnTe crystal as representative, the absorption and gain characteristics in zinc blende crystal are calculated, and the output tuning characteristics of terahertz wave are also analyzed.

基于受激电磁耦子散射原理，采用已报道的利用非线性光学参量振荡方法产生可调谐太赫兹波的实验条件作为理论分析的实验模型，以GaAs、GaP、 InP、ZnTe晶体为代表，计算分析了在闪锌矿晶体中参量振荡产生太赫兹波的吸收、增益特性，对输出THz波的调谐特性给出了详尽分析。

In recent years, low dislocation density or dislocation-free GaAs and InP crystals doped with isoelectronic impurities have been r...

近年来，人们用掺等电子杂质的方法来降低GaAs和InP单晶中的位错密度非常重视。

In recent years, low dislocation density or dislocation-free GaAs and InP crystals doped with isoelectronic impurities have been receiving considerable interests.

近年来，人们用掺等电子杂质的方法来降低GaAs和InP单晶中的位错密度非常重视。

In addition, InP technology provides the following measurement benefits compared with other technologies available today: significantly flatter response at high frequencies; higher measurement accuracy because of the low-noise, nonconductive substrate; and higher reliability due to lower power consumption.

相较于其他的技术，InP技术还提供许多量测优点：在较高的频率下，可产生相当平坦的响应；低噪声的非传导性基板，可提高量测准确度；低消耗功率，可确保较高的可靠度。

The electrical property of the Fe-doped SI-InP is deteriorated due to the existence of a high concentration of deep level defects, which act as compensation and trapping centres.

在掺铁半绝缘InP材料中由于存在高浓度的深能级缺陷参与电学补偿，降低了材料的电学性能。

Designed a self-reduction reaction to prepare Ⅲ-Ⅴ family semiconductor nanocrystalline. Synthesized InAs nanocrystalline whisker and series of Ⅲ-Ⅴ compound semiconductor, such as InSb, GaSb, InP.

设计了自还原制备Ⅲ-Ⅴ族纳米半导体的反应，成功地合成出InAs纳米晶须，InSb，GaSb，InP等系列Ⅲ-Ⅴ族化合物半导体。

A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes.

介绍了由带尾纤的InGaAs/InP雪崩光电二极管建立的近红外单光子探测系统。

Lugalbanda was a god and shepherd king of Uruk where he was worshipped for over a thousand years.

Lugalbanda 是神和被崇拜了一千年多 Uruk古埃及喜克索王朝国王。

I am coming just now,' and went on perfuming himself with Hunut, then he came and sat.

我来只是现在，'歼灭战perfuming自己与胡努特，那麼，他来到和SAT 。