查询词典 INP

In contrast, the concentration of deep defects is very low in annealed undoped InP and the doping of Fe acceptor by diffusion acts as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance.

相比之下，非掺退火半绝缘InP材料中深能级缺陷浓度很低，通过扩散掺入的铁受主作为唯一的补偿中心钉扎费米能级，因而表现出优异的电学性质。

The InP process technology also has superior material properties compared with Agilent\'s prior-generation gallium arsenide process.

比起安捷伦前一代的砷化镓制程，InP制程技术拥有更佳的材料特性。

So, the process of manufacturing the front electrode of InGaAs solar cell by using AuBe/Cr/Au for an ohmic contact to the p-type InP window layer.

所以，此太阳能电池元件之正面电极用属AuBe/Cr/Au和p-InP窗层形成欧姆接触。

By using Transmission Line Model to investigate the ohmic contact of electrode metal and InP semiconductor. We got a low specific contact resistively of 2.24×10-5 Ω-cm2 of the AuBe/Cr/Au contact to p-InP.

我们用Transmission Line Model方式得到低的特徵接触电阻约2.24×10-5 Ω-cm2之AuBe/Cr/Au属和p-InP形成的欧姆接触。

The invention discloses an InP quantum point preparing method, comprising the steps of:(1) mixing InCl3 with trioctylphosphine oxide, and preserving heat at 90-110DEG C to prepare a solution whose In content is 0.1-0.3mol/L;(2) raising temperature to 130-180DEG C, and charging argon gas;(3) injecting PSi(CH333 into InCl3-TOPO compound in the molar ratio of 1 to 1-1 to 2;(4) when the solution color turns into transparent red or orange, raising temperature to 260-270DEG C and preserving heat;(5) lowering temperature to 90-110DEG C and injecting dodecyl amine, decyl amine or mercaptan;(6) dissolving reacting mixture in nonpolar solvent to form transparent colloidal solution, then adding in polar solution until the colloidal solution is muddy, and centrifugally separating and obtaining deposits and supernatant; and (7) centrifugally separating the supernatant, where the above steps (1)-(5) are performed.

本发明公开了一种InP量子点的制备方法，其步骤为：①将InCl 3 与三辛基氧膦混合，在90～110℃保温制得In含量为0.1～0.3mol/L的溶液；②升温到130～180℃，通入氩气；③将PSi(CH 3 3 3 注射入InCl 3 -TOPO复合物中，其摩尔比为1∶1～1∶2；④待溶液颜色变为透明的红色或橙红色，将升温260～270℃保温；⑤降温到90～110℃，注入十二胺、癸胺或硫醇；⑥将反应混合物溶于非极性溶剂，形成透明的胶体溶液，然后加入极性溶剂，直至胶体溶液出现混浊状，然后离心分离获得沉积物和上层清液；⑦取上层清液进行离心分离。上述步骤①～⑤在保护气氛下进行。

Based on the experiment, the process of doping of Zn/InP Indued by continuous wave laser was analysed.

在实验的基础上，分析表面蒸发Zn的InP样品在连续激光诱导下掺杂Zn过程。

Secondly, the spatial distribution of transport properties of GaP and InP bulks, including electric fields, drift velocities and mobility, are calculated at different applied voltages and an overshoot phenomena in the electron densities and drift velocities of the GaP and InP bulks under the high electric field was found.

同时计算了GaP和InP体材料输运性质，分析了它们的电场强度、漂移速度和迁移率在不同偏置电压下的空间分布，以及电子密度和漂移速度在高电场下的过冲现象。

The influence of this complex on the electrical properties of n-type LEC undoped and compensation in Fe-doped InP is discussed.

讨论了其对未掺杂InP的电子特性和掺Fe的InP的补偿的影响，及其对InP热稳定性的影响。

In this dissertation, InGaAs/InGaAsP/InP MQW microdisk laser and its characterization were presented. Some conclusions are as following: the characteristics of lasing threshold was discussed by using rate equation. The dependent relations between threshold and cavity volume, spontaneous emission coupling efficiency β were investigated. The whispering gallery mode and spontaneous emission in a microdisk geometry were then studied. Almost all spontaneous emission was coupled into the lowest order TE mode when the normalized thickness of photonics well was between 0.15 and 0.5. The design principle and device process of InGaAs/InGaAsP/InP MQW microdisk laser were presented. The microdisk lasers with the diameter of 8μm, 4. 5μm and 2μm were succesfully fabricated by using etching techniques. The pulse lasing thresholds for the microdisk with the diameter of 8μm and 4. 5μm were 170μW and 15μW, a record results compared with the published in the literature. The cw lasing threshold for a 2-μm-diameter microdisk was only a few μW. We haven't found similar report up to now. To solve the problem of directional output in a microdisk laser, the power coupling efficiency in a double disk geometry was investigated with the theory of waveguide mode couple. A new structure of electrically pumped microdisk laser with output waveguide was designed, making a foundation for the practical use of microdisk laser.

本文主要研究InGaAs/InGaAsP/InP多量子阱半导体碟型激光器的研制和特性表征，并取得如下结果：利用速率方程理论讨论了激光器激射阈值的特性，分析了阈值与腔体积和自发发射耦合系数β之间的关系；讨论了微碟光子阱结构中的自发发射特性和微碟中WGM模式特性；光子阱结构在其归一化厚度在0.15-0.5之间时，几乎全部自发发射进入到最低阶TE模式中；研究了InGaAs/InGaAsP/InP多量子阱微碟激光器的结构设计原理和器件的制备工艺；利用刻蚀方法成功制备出直径分别为8μm、4.5μm、2μm的碟型微腔激光器；直径8μm和4.5μm的微碟脉冲光泵浦激射阈值分别为170μW、15μW，是目前所见文献报导中比较低的；直径2μm的微碟连续光泵浦激射阈值仅几μW，目前尚未见到达到类似结果的研究报导；为解决微碟激光器激射光定向引出的问题，通过波导耦合模理论分析了双层碟之间功率耦合效率；据此设计了新型带耦合输出波导的电泵浦微腔激光器，为进一步研制可实用的电泵浦微腔激光器打下基础。

On the bases of a solid solution hardening model, and considering the solubility of isoelectronic impurities in InP crystals and the elastic misfit arised from the differences of the tetrahedral radii between added impurities and host atoms, the pinning forces as large as 〓 have been obtained for isoelectronic impurities in InP.

以InP单晶中的等电子杂质为例，根据固溶强化模型，考虑了等电子杂质在InP单晶中的溶解度以及掺入杂质与基质原子之间共价半径之差引起的弹性失配，计算了这些杂质在InP中对位错的钉扎力可达10〓～10〓达因/厘米〓，从而很好地解释了等电子杂质降低位错密度的作用。

Lugalbanda was a god and shepherd king of Uruk where he was worshipped for over a thousand years.

Lugalbanda 是神和被崇拜了一千年多 Uruk古埃及喜克索王朝国王。

I am coming just now,' and went on perfuming himself with Hunut, then he came and sat.

我来只是现在，'歼灭战perfuming自己与胡努特，那麼，他来到和SAT 。