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III-para相关的网络例句

查询词典 III-para

与 III-para 相关的网络例句 [注:此内容来源于网络,仅供参考]

I. and ii., in contrast to the apocalyptic character, which actually begins with iii.

和二。相反,在世界末日的性质,实际上始於三

Turning then to Italy, Attila, in the spring of 452, laid waste Aquileia and many Lombard cities, and was approaching Rome, whither Valentinian III had fled before him, when he was met near Mantua by an embassy -- the most influential member of which was Pope Leo I -- which dissuaded Attila from sacking the city.

于是阿堤拉转而进攻意大利。452年的春天,他摧毁了阿奎莱亚以及许多伦巴城市,直逼罗马。在他到达之前,Valentinian三世早已逃走。一个使团在曼图亚附近出来迎接他—使团中最有影响的人物是罗马教皇Leo一世—他劝阻阿堤拉不要洗劫罗马。

It was written by Paolo Lanfranchi da Pistoia and is addressed to Peter III of Aragon.

它的作者是保罗兰弗兰基大皮斯托亚并给彼得三世的阿拉贡。

In the Autumn of 331, the Persian king Darius III Codomannus used Arbela as his base before he marched to Gaugamela , where he was defeated by his Macedonian colleague Alexander the Great on 1 October.

秋天的331 ,波斯王大流士三世Codomannus使用Arbela作为他的面前,他游行到高加米拉,他在那里被击败马其顿的同事亚历山大大帝於10月1日。

"Phase II trials such as this one are adding to our knowledge, and other phase III trials are getting ready to publish their data," said Arlen.

"二期试验像这样1顷加入到我们的知识,和其他三期试验的准备公布其数据,说:"阿伦。

Had they been subjects of the last Persian king Darius III Codomannus , they would have figured in Arrian's lists of Persian warriors.

如果他们被科目的最后波斯国王大流士三世Codomannus ,他们会在安占有的名单,波斯战士。

Arsenite As (III and arsenate As (V removal by membrane distillation were investigated in the present work.

采用新型膜蒸馏技术对水中As与As的去除展开了研究。

Because of the rapid development of the wireless communication technology, the design and research of the integrated circuits in the related field has gained more and more attention in recent years. And with the advance of the IC process technology, the cutoff frequency of MOS devices can reach several giga herz or more. It is a trend that CMOS process will replace the III-V compound process such as gallium arsenide or silicon bipolar process which were dominant in the fields of radio frequency and microwave.

近年来,由于无线通信技术的飞速发展,相关领域的集成电路的设计研究也受到越来越多的关注;同时由于工艺技术的不断进步,MOS器件的特征频率也可以达到几个GHz或更高的水平,原来在射频、微波领域占主导地位的三五族化合物半导体工艺如砷化镓及硅双极型工艺也有逐渐被CMOS工艺所取代的趋势。

It is sure that CMOS process will be replacing the III-V compound process such as gallium arsenide or silicon bipolar process that were dominant in the fields of radio frequency and microwave.

采用CMOS工艺进行射频电路设计的一个好处是,使得模拟射频收发器电路和基带信号处理电路由同种工艺实现,迎合了单片系统集成的发展趋势。

The compound semiconductors of III-V Group just as gallium arsenide have hige carrier transition ratio and good optoelectronic performance, so the study and application of these materials are very hot.

以砷化镓为代表的Ⅲ-Ⅴ族化合物半导体具有高度迁移率和比硅更优异的光电子等性能,许多国内外关于这类材料的研究和应用一直是热门课题。

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