查询词典 I.V.

The dependences of gate efficiency and voltage amplification factor on biasing voltages and device dimensions are obtained. The expression of I—V characteristic under lower biasing voltage is also provided.

针对埋栅结构的SIT，利用镜像法计算了器件内部电场分布，给出了栅效率和电压放大因子随偏压和器件尺寸的变化关系，以及小偏压下器件I—V特性表达式。

An I-V characteristic curve can be automatically acquired in 5 second with an accuracy of 0.05%.

研制了一个微机测量系统，这个系统可在 5 秒钟内获得 I-V 曲线，精确度为 0.05%。

In comparison with the switches based on other polytypes of SiC, the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.

结果表明，与采用其他结晶类型的碳化硅衬底相比，SiCGe与3C-SiC间较小的晶格失配有利于提高器件性能，可使其最大共射极电流增益达到890，获得最好的光触发特性和较好的I-V特性，饱和压降大约为4V。

Company is mainly engaged in automation and control products (string-based industrial data acquisition and control interface cards, serial 8 ~ 24 Road multifunction relay controller, I / V conversion module, etc.), monitoring equipment (Intelligent Comptroller General Instrument, etc.), constant current , constant-voltage products, the surface of school non-destructive testing products (indicator magnetic properties, metal defect diagnosis module, a new generation of intelligent digital display module) and the metal magnetic memory testing product development, sales and after-sale repair Service.

公司主要从事自动化控制产品（串型接口工业数据采集控制卡、串行8路~24路多功能继电器控制器、I/V转换模块等），监控设备，恒流、恒压产品，表面学无损检测产品（磁特性指示仪、金属缺陷诊断模块、新一代智能数字显示模块）以及金属磁记忆检测产品的研发、销售和售后维修服务。

This paper presents an I-V equation that is available in the whole on-state region by numerical simulation, and creates the I-V Characteristic Macromodel.

因此在数值模拟的基础上提出了全导通区域的伏安特性方程，建立了LDMOS I-V特性的宏模型。

Provide test and measurement solutions for device characterization and monitoring semiconductor wafer processing, including DC to RF Automated Parametric Test systems, Wafer Level Reliability systems, and I-V/C-V test systems.

我们的产品可用于半导体特性分析、参数测试、半导体晶片生产工艺监控，覆盖从DC到RF的自动参数测试系统，晶片可靠性系统和I-V/C-V测试系统。

For any two vertices u and v of a graph G, a u-v geodesic is the shortest path between u and v. The set I consists of all vertices lying on a u-v geodesic. For SV, I is the union of all sets I for vertices u, v∈S. The geodetic number g is the minimum cardinality among the subsets S of V with I=V.

对于图G内的任意两点u和v，u-v测地线是指在u和v之间的最短路。I表示位于一条u-v测地线上所有点的集合，对于SV，I表示所有I的并，这里u，v∈S，G的测地数g是使I=V的最小点集S的基数。

Due to the original Simmons model only predict the symmetric I-V behaviour, a modified Simmons model, which considered the observed spectra asymmetry in terms of inequivalent Fermi level shifts of the two contacts, was proposed to describe the I-V behaviour of azurin.

由于原始的Simmons模型只能预测对称的I-V特性，而实验观察到的I-V曲线是不对称的，是故本文提出了修正的Simmons模型（考虑了费米能级在两个接触界面处的不对称偏移）来描述铜蓝蛋白的I-V特性。

In this paper, a simple, accurate and intuitionistic formula and method for calculating and analyzing the I-V characteristics of a pn junction is deduced. The method is used to calculate and analyze the I-V and RD-V characteristics of two typical HgCdTe loophole junctions. Some important parameters which reflect the characteristics of a diode, such as surface Ohm leakage conductance and the distribution of the ideal factor n with voltage are obtained.

本文推导了一种可简便、准确、直观计算和分析pn结I-V特性的公式和方法，并应用该方法对两类典型HgCdTe环孔pn结的I-V、RD-V特性进行了计算和拟合；得到了表面欧姆漏电导、二极管理想因子n随电压的分布等反映二极管结特性的重要参数。

Based on the analysis of current oscillation region of stable electric fielddomains in I-V curve,it is shown that when the applied bias voltage is changedwithin positive slope regions of I-V curve,the domain boundary between the high-and low-electric field domains does not moved,and the size of electic fielddomains regions is also not altered,while the electric filed strengths are adjusted tokeep the current conservation.

通过对稳态电场畴情况下I-V曲线中电流振荡区域的分析，证明当外加偏压在正微分电导区变动时，超晶格的高低电场畴之间的畴边界不发生移动，畴的大小不变，只是相应的电场强度做些调整以使电流守恒成立。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。