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The crystalline quality and morphology of GaN nanostructures were greatly influnced by the ammoniating temperature, ammoniating time and the thickness of the Ta films.

研究了不同的氨化温度、不同的氨化时间和不同中间层厚度对GaN纳米线的影响。

Firstly, Ga2O3/Ta film is deposited on Si (111) substrates by magnetron sputtering system, and then GaN nanostructures were fabricated through ammoniating.

本文介绍了采用氨化磁控溅射Ga_2O_3/Ta薄膜的方法在硅衬底上合成了GaN纳米结构的方法。

The ammoniating temperature, ammoniating time and the thickness of the Nb films greatly affected the crystalline quality, morphology and photoluminescence properties of the GaN nanomaterials.

研究表明，氨化温度、氨化时间和金属催化剂Nb的厚度对一维GaN纳米材料的结晶程度和形貌具有很大的影响。

Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube.

中文摘要：采用射频磁控溅射技术在硅衬底上制备Ga2O3/Nb薄膜，然后在900 °C下于流动的氨气中进行氨化制备GaN纳米线。

GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.

采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜，然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒。应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征。

One-dimension GaN nanomaterials were fabricated on Si(111) substrates through ammoniating Ga2O3/Nb films deposited by ratio frequency magnetron sputtering system and direct current magnetron sputtering system respectively.

用直流磁控溅射系统和射频磁控溅射系统，分别在在硅衬底上先后沉积Nb薄膜和Ga2O3薄膜，接着在氨气气氛中退火制备一维GaN纳米材料。

The electron densities of statesof GaN under different biaxial stress field were calculated. The theoretical Auger spectra N KVV of various stress conditions were obtained by convoluting the DOS and fitting the experimental spectra.

通过第一性原理计算模拟GaN在不同双轴压应力场中的电子结构，根据拟合实验谱确定的组合系数，模拟出不同应变/应力下的N KVV的理论俄歇价电子谱；标定应变/应力与俄歇电子谱广义位移的定量关系。

A new method based on proportional-integral-derivative control is proposed to measure photoionization cross sections in GaN materials by analysis of release and recaptures carriers of deep centers by incident light.

在分析GaN中深能级中心与入射光子间相互作用的基础上，提出了一种基于PID proportional-integral-derivative）技术的深能级中心光离化截面的测试方法。

This study suggests that GaN-based TEDs have significant advantages for high-frequency and high-power microwave generation,which are perspective for high-power THz signal source applications.

本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势，作为大功率THz微波信号源将具有广阔的应用前景。

The effects of AlN spacer layer on AlGaN/GaN HEMTs are studied, and the results show that the insertion of AlN spacer layer can improve gate schottky barrier and decrease gate leakage current.

研究了AlN阻挡层对AlGaN/GaN HEMT器件性能的影响，结果表明，AlN阻挡层的增加提高了栅肖特基势垒，增加器件的关断电压，降低了栅泄漏电流。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失