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The crystalline quality and morphology of GaN nanostructures were greatly influnced by the ammoniating temperature, ammoniating time and the thickness of the Ta films.

研究了不同的氨化温度、不同的氨化时间和不同中间层厚度对GaN纳米线的影响。

Firstly, Ga2O3/Ta film is deposited on Si (111) substrates by magnetron sputtering system, and then GaN nanostructures were fabricated through ammoniating.

本文介绍了采用氨化磁控溅射Ga_2O_3/Ta薄膜的方法在硅衬底上合成了GaN纳米结构的方法。

The ammoniating temperature, ammoniating time and the thickness of the Nb films greatly affected the crystalline quality, morphology and photoluminescence properties of the GaN nanomaterials.

研究表明，氨化温度、氨化时间和金属催化剂Nb的厚度对一维GaN纳米材料的结晶程度和形貌具有很大的影响。

Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube.

中文摘要：采用射频磁控溅射技术在硅衬底上制备Ga2O3/Nb薄膜，然后在900 °C下于流动的氨气中进行氨化制备GaN纳米线。

GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.

采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜，然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒。应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征。

One-dimension GaN nanomaterials were fabricated on Si(111) substrates through ammoniating Ga2O3/Nb films deposited by ratio frequency magnetron sputtering system and direct current magnetron sputtering system respectively.

用直流磁控溅射系统和射频磁控溅射系统，分别在在硅衬底上先后沉积Nb薄膜和Ga2O3薄膜，接着在氨气气氛中退火制备一维GaN纳米材料。

The electron densities of statesof GaN under different biaxial stress field were calculated. The theoretical Auger spectra N KVV of various stress conditions were obtained by convoluting the DOS and fitting the experimental spectra.

通过第一性原理计算模拟GaN在不同双轴压应力场中的电子结构，根据拟合实验谱确定的组合系数，模拟出不同应变/应力下的N KVV的理论俄歇价电子谱；标定应变/应力与俄歇电子谱广义位移的定量关系。

A new method based on proportional-integral-derivative control is proposed to measure photoionization cross sections in GaN materials by analysis of release and recaptures carriers of deep centers by incident light.

在分析GaN中深能级中心与入射光子间相互作用的基础上，提出了一种基于PID proportional-integral-derivative）技术的深能级中心光离化截面的测试方法。

This study suggests that GaN-based TEDs have significant advantages for high-frequency and high-power microwave generation,which are perspective for high-power THz signal source applications.

本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势，作为大功率THz微波信号源将具有广阔的应用前景。

The effects of AlN spacer layer on AlGaN/GaN HEMTs are studied, and the results show that the insertion of AlN spacer layer can improve gate schottky barrier and decrease gate leakage current.

研究了AlN阻挡层对AlGaN/GaN HEMT器件性能的影响，结果表明，AlN阻挡层的增加提高了栅肖特基势垒，增加器件的关断电压，降低了栅泄漏电流。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。