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High quality cubic GaN is grown by metalorganic vapor deposition at an increased growth temperature of 900℃,with the growth rate of 1.6μm/h.

利用MOCVD技术在提高生长温度(900℃)下生长出了高质量的立方相GaN，生长速度提高到1.6μm/h。

The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition are systemically studied.

本文系统性的研究了Si掺杂GaN薄膜的应力、结构和电学特性。

Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were anealed at temperatures between 550 and 950℃.

用MOCVD技术生长GaN：Mg外延膜，在550～950℃温度范围内，对样品进行热退火，并进行室温Hall、光致发光谱测试。

Plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapor deposition with a two-step AlN buffer layer.

采用MOCVD技术在；面蓝宝石衬底上采用两步AlN缓冲层法外延制备了α面GaN薄膜。

Flow patterns,spatial distribution of temperature and chemical species,and growth rates during growth processes of GaN in planetary metalorganic chemical vapor deposition reactor are simulated three-dimensionally based on computational fluid dynamics theory.

基于计算流体力学在三维空间中模拟了水平行星式金属有机物化学气相沉积反应器生长GaN材料的流场、热场、反应物与生成物的分布以及材料生长速率等重要物理参数。

Direct growth of GaN films on Si(001) substrate at low temperatures (620～720℃) by electron cyclotron resonance microwave plasma enhanced metalorganic chemical vapor deposition.The crystalline phase structures of the films are investigated.

研究了用电子回旋共振等离子体增强金属有机物化学气相沉积技术在Si(001)衬底上，低温(620～720℃)下GaN薄膜的直接外延生长及晶相结构。

The InGaN/GaN films have been grown on (0001) sapphire substrates by metalorganic chemical vapor deposition under the atmospheric pressure.

采用MOCVD技术以Al2O3为衬底在GaN膜上生长了InGaN薄膜。

After coating the solutions on the substrates, the precursor films will go through a heat treatment to pyrolyze the polymer and form solid films, In this paper, we show some representative oxide and nitride films grown by PAD, including simple oxide/nitride such as TiO2, GaN, A1N and complex oxide/nitride such asTiO3 and Ti(subscript 1-x)AlN.

该文介绍了使用该方法制备的一些具有代表性的氧化物和氮化物薄膜，包括简单氧化物／氮化物，如TiO2、GaN和AlN等，复杂氧化物／氮化物如（Ba，SrTiO3、Ti(下标 1-x)AlN等。

By summering and analyzing of related papers published in recent years, this review focuses on the developments in improved n-GaN processes and the current state-of-the-art in contact performance.

通过对有关文献的归纳分析，主要介绍了近年来在改进n-GaN工艺、提高欧姆接触性能等方面的研究进展。

In this paper, GaN one-dimensional nanosmaterials were synthesized through magnetron sputtering and ammoniating progress on Si(111) substrates.

本文介绍了利用溅射加氨化的两步生长法在Si衬底上采用金属Nb作催化剂合成一维GaN纳米材料的方法。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。