查询词典 Gan

We study the relationship between microstructure and luminescence efficiency for GaN heteroepitaxial films by cathodoluminescence,transmission electron microscopy,and X-ray diffraction.

用阴极射线致发光法、透射电子显微镜和X射线衍射法研究了异质外延GaN材料的发光性质与结构特性的关系。

The full width at half maximum values of the serial crystal planes of the GaN epitaxial films on Si substrates were reported.

报道了Si衬底GaN外延膜系列晶面的半峰全宽值。

The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.

用X射线衍射方法通过不同晶面的ω扫描测试，分析了Si衬底GaN蓝光LED外延膜中n-型层δ掺杂Si处理对外延膜结晶性能的影响。

Aim To investigate the influence of ion density on the deposition of wurtzite GaN films on the substrate of α-Al2O3(0001) by electron cyclotron resonance plasma.

目的 研究在电子回旋共振等离子体辅助法生长GaN时的离子密度对其质量的影响。

With solving the determinantal equation, SAW propagation properties in AlN/GaN structures are acquired, including the phase velocity and electromechanical coupling coefficient which is vary with frequency, film thickness and c-axis orientation.

通过求解该行列式方程，分析了声表面波在AlN/GaN结构中的传播特性，包括声表面波相速和机电耦合系数随频率、AlN的膜厚和c轴取向的变化规律。

With solving the determinantal equation, SAW propagation properties in AIN/GaN structures are acquired, including the phase velocity and electromechanical coupling coefficient which is vary with frequency, film thickness and c-axis orientation.

通过求解该行列式方程，分析了声表面波在AIN／GaN结构中的传播特性，包括声表面波相速和机电耦合系数随频率、AIN的膜厚和C轴取向的变化规律。

This work analyzes the potentiality of increasing the conversion efficiency for the solar cells materials based on GaN semiconductor materials doped by Cr.

分析了掺Cr的GaN半导体材料作为太阳能电池材料增加转换效率的可行性。

In the simulations we considered the effect of the lattice temperature on the steady-state electron drift velocity-field relation in GaN.

模拟中考虑了晶格温度对于GaN稳态电子速度-场关系的影响。

We carried out a detailed study of GaN epitaxy and fabrication of GaN-based light-emitting diodes on silicon substrate.

一方面根据Si衬底上生长GaN的难点分别提出了相应的生长方法，另一方面是根据Si衬底的特点进行器件制备研究。

Through chemical reaction between Ga and NH〓, high-density of regular-shaped GaN nanorods was fabricated on the substrates. The distinct morphology of the GaN nanorods lies in their prism-like out shape and most of them have a quadrilateral cross section.

通过金属镓与氨气反应，制备了大量的具有规则外形的GaN纳米棒，这些纳米棒的典型形貌在于其四边形的横截面。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失