查询词典 Gan

It is the first time that cubic GaN films were achieved at such a high Ⅴ/Ⅲ rate.

这是第一次在高Ⅴ/Ⅲ比下得到立方GaN。

Among them, patriotism is the outstanding theme of the Gan culture.

其中，爱国主义是赣文化的突出主题。

The tribes of Gar and Gan, which were added to the Green Bibles of the early ...

部落的服装和罗干，其中加入了绿色圣经年代初。。。

The Golden Eagle in small during this period of time after not Gan, once ranked second.

小金鹰在此之后，没有干一段时间，曾经排名第二。

In this paper,we introduce the main research content and the basic principle of GAN,the situation and development of the gravity sensor ,digital map processing and matching theory in home and abroad,especially the architecture and the research results of Gradiometer As an External Navigation Aid,Gravity Aided Inertial Navigation System.

本文在进行了一般性辅助导航方法的概述之后，详细介绍了与辅助导航相关的重力场基本概念、重力辅助导航系统的主要研究内容、基本原理；从重力传感器、重力图数据处理及重力图匹配理论与算法三个方面详细介绍了其国内外研究现状，重点介绍了重力梯度仪辅助导航、重力辅助惯性导航和通用重力模块三种系统的体系结构和研究成果；总结了重力辅助导航涉及的关键技术及其发展趋势；最后给出了我国开展海洋重力辅助导航研究的若干建议

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

Objective: To observe the therapeutic effect of Gan Luo xin Pill on chronic hepatitis B and early hepatocirrhosis.

摘 要：目的：观察肝络欣丸治疗慢性乙型肝炎、早期肝硬化的临床疗效。

On Si (100) substrates hexagonal GaN films were obtained.

对在Si（111）、Si（100）和SOI柔性衬底上的GaN生长进行了研究。

As of Tuesday, Google's results were still censored in China.

截至周二，谷歌的搜索结果仍受中国审查。

In order to make the positive action increase and negative one decrease, the sub-forces of the social factors must be adjusted to form a centripetal force.

在这一过程中，人的主体性发挥是社会有机体健康发展的灵魂。