查询词典 Gan

35, favour kind and enmity is complained 50 carry--, Mao Zedong and Zhang Gan (2)Be ashamed into anger of proper Zhang Gan when, somebody add fuel to the flames --, a warden informs against to him say, sent in this campus upheaval " big use " that " character of drive Zhang Xuan ", mao Zedong of 2 grade student is drafted.

三十五、恩恩怨怨五十载———毛泽东和张干（2）正当张干恼羞成怒的时候，有人火上浇油了———一个学监向他告密说，在这次学潮中派了"大用场"的那份《驱张宣言》，是二年级学生毛泽东起草的。

This indicates the presence of the surface states on the surface of the barrier layer.

近期的研究表明，在GaN和AlxGa1-xN势垒层的表面存在表面态，这对GaN和AlxGa1-xN/GaN异质结中载流子的分布有显著的影响[8～ 11] ，从而对基于调制掺杂AlxGa1-xN/GaN异质结构器件的性能有着很大的影响，会降低载流子浓度和漏电流，减小器件的跨导和阈值电压。

In this study, AlGaN/GaN hetero-junction photo-transistors in detecting ultraviolet spectra have been fabricated and characterized. One of the HPTs features as low-temperature grown GaN insertion layer between based and emitter layers to reduce dark current. The internal gain and response time are also studied for the HPTs with and without the LT-GaN layer.

中文摘要本论文针对氮化镓/氮化铝镓系列异质接面光电晶体作为紫外光波段侦测器之相关制作与研究，包括於磊晶结构中有无插入一层低温成长氮化镓层之两种异质接面光电晶体，并比较其元件讯号放大效果以及响应时间的改变。

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The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。

The adsorption and decomposition of H2S on GaN (0001) surface has been explored employing density functional theory.

本文作者借助密度泛函的方法，考察了H2S分子在半导体材料GaN（0001）表面的吸附和分解反应过程。

N2 gas molecules RF Glow Discharge in GaN, new materials such as synthetic surface and the metal nitride technology and other fields has been widely used.

N2气体分子射频辉光放电在GaN，等新型材料合成以及金属表面氮化技术等领域已得到了广泛的应用。

The high ohmic contact resistance at metal/GaN interfaces is a continuing problem that has led to poor device performance and reliability.

金属/GaN界面间较大的欧姆接触电阻一直是影响器件性能和可靠性的一个问题。

The aim of this study was to evaluate the extent of colonic intubation by using a novel self-propelled, self-navigating endoscope (the Aer-O-Scope; GI View Ltd, Ramat Gan, Israel).

这项研究的目的是应用一种新型自主推进、自主导航的内窥镜来评估结肠插管的安全有效性（the Aer-O-Scope；GI View 有限责任公司，Ramat Gan 以色列）。

Tantalum nitride and nichrome are the two most common materials used as thin film resistors for monolithic microwave integrated circuits based on AlGaN/GaN high electron mobility transistors.

TaN和NiCr是AlGaN/GaN HEMTs微波集成电路中薄膜电阻最为常用的两种材料。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失