查询词典 Gan

The structure consists of at least two active regions emitting light with different main wave length, each of them has its own optical waveguide limit layer, two or multiple optical spectrum with different main wave length are mixed together to produce white light; cleavage cavity surface of both sides are plated reflecting film to form photon resonant chamber, light-emitting direction is all from side, this structure is suitable for LED with GaN or ZeSe base or other materials, the substrate is mode of sapphire, SiC or other materials.

本发明是一种直接出射白光的高亮度功率型LED芯片，其结构是：设有至少两个发射不同主波长光的有源区，每一个有源区具有各自的光波导限制层；两种或者多种主波长不同的光谱混合在一起产生白光；其两侧的解理腔面都镀有反射膜，形成光子谐振腔；光出射方向为全侧面出光，此种结构适合GaN基或ZeSe基的LED，或者其它材料的LED；其衬底是蓝宝石衬底，或SiC衬底，或者别的衬底材料。

Win or lose, these people will meet up for a get-together after every home match. I was introduced to several Lazio's Radio Deejays as Gan, the 'Fan from Singapore'.

赢或者输，这些人都会在赛后聚到一起，我被介绍和几位拉齐奥的电台DJ认识，像是Gan，&来自新加坡的球迷&。

The comparison shows that dopping of carbon into GaN produces a significant yellow luminescence around 2.25 eV in PL spectra, and a characteristic excitation band due to C doped about 3.38～2.67 eV has also been observed in PLE spectra.

随着研究的深入，也为了获得更高性能的器件，在GaN材料中存在的一些固有问题(譬如黄带与杂质、缺陷的关系)越来越成为主要障碍，必须认真加以解决。

Recent important progress in the growth of high quality epitaxial GaN thin films is reviewed.

综述了高质量GaN外延薄膜的生长研究工作的最新重要进展。

Then a set of monitoring system, which was used in the epitaxial growth process of GaN film was designed.

但由于缺乏大尺寸的GaN基体材料，所以只能在其他衬底上进行异质外延生长。

The results indicate that reasonable mixture time of group Ⅲ and groupⅤgas flows is important to improve the quality of GaN∶Si films.

结果表明：合理的Ⅲ、Ⅴ族气流混合对提高GaN：Si膜的光电及结晶性能很重要。

A novel composite-channel Al x Ga1- x N/Al y Ga1- y N/GaN high electron mobility transistor has designed and optimized.

对新型复合沟道Al x Ga1- x N/Al y Ga1- y N/GaN高电子迁移率晶体管进行了优化设计。

A baraita fixes the dimensions of Gan and of Eden by comparisons with Egypt, Ethiopia, etc.: Egypt is 400 parasangs square, and is one-sixtieth the size of Cush .

baraita固定尺寸的GaN和伊甸园通过比较与埃及，埃塞俄比亚等说：埃及是400 parasangs广场是一个第六十大小cush 。

By this technique, quasi twodimensional growth of AlN was achieved under optimized condition, and more, high quality GaN layers were grown on Si (111) substrates using optimized AlN as buffer layer, and the full width at half maximum of near band edge emission at room temperature is the best reported result.

实验结果表明，经优化预沉积Al，成功获得了AlN在Si（111）衬底上的准二维生长，从而生长出高质量的以AlN作为缓冲层的Si基的GaN薄膜材料，其室温光致发光带边发射峰半高宽10nm，为所见报道室温测量结果最小值。

Experimental results showed that SOI compliant substrates could effectively reduce surface cracks and residual strain of the GaN epilayers.

AFM测试显示其表面粗糙度仅为0.6nm，PL光学性质测试表明柔性衬底上生长的GaN样品含有较少的杂质和缺陷。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。