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Luminescence evolutions of GaN irradiated by low energy electron beam before and after hydrogenation has been investigated by means of cathodoluminescence, combined with the diffusion properties of hydrogen in GaN.

本文结合氢在GaN中的扩散特性，运用阴极荧光谱，对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究。

Using Crosslight APSYS software, the effects of the electrode shapes on the electrical and optical properties have been studied for the chip structure of p-GaN, InGaN/InGaN MQW, n-GaN/ and sapphire.

采用Crosslight APSYS这一行业专业软件对p-GaN、InGaN/InGaN MQW、 n-GaN/和Sapphire的芯片结构研究了不同电极形状与器件的光电性能之间的关系。

Using Density Function Theory we receive the ground states of GaN and GaN2 are X 、X2B2 respectively.Murrell-Sorbie analytical potential energy functions of GaN have been derived by using ab initio data and the least-square fitting method, and harmonic frequency, force constant and spectroscopic data also have been calculated.

基于量子化学计算得出GaN和GaN2 基电子态及其离解极限之后，利用计算数据和最小二乘法得到了GaN 的M-S解析势能函数，并计算出各态的谐振频率、力常数和光谱数据。

On the basis of photovoltaic signal of cubic GaN, we not only obtained the bandgap of cubic GaN, but also obtained the minority carrier diffusion length of cubic GaN which is in the range of 0.32 and 0.14μm.

通过对光伏曲线的研究了，提出了一种测量禁带宽度的方法，并测量出n型GaN的少子扩散长度在0.14μm和0.32μm之间，与六方相GaN的报道结果一致。

The technology of the invention can effectively control the growth of the GaMnN materials to obtain GaN Mn-doped thin-film materials. According to research, the intrinsic magnetism of the Mn-doped GaN is paramagnetism.

本发明可有效地控制GaMnN材料的生长，获得高质量的Mn掺杂的GaN薄膜材料，研究发现Mn掺杂的GaN的本征磁性为顺磁性。

The experimental results indicate a luminescence enhancement effect of hydrogen by passivating certain defects in GaN. However, such effect must be realized by overcoming high migration barrier in GaN. In the experiments, low energy electron beam supports enough energy to hydrogen to diffuse and passivate defects in GaN.

研究表明氢原子在GaN中可以钝化缺陷来增强发光，但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现，而低能电子束可以提供足够的能量使得氢原子克服扩散势垒来实现钝化作用。

This dissertation mainly focused on the growth and characterization of GaN based materials grown by radio frequency plasma assisted molecular beam epitaxy.

本文研究了GaN和AlGaN/GaN材料的射频等离子体分子束外延生长及其特性，并对相关器件工艺中的若干重要问题如刻蚀、欧姆接触等，进行了初步探索。在前人工作的基础上，进一步优化了GaN材料的生长工艺，并深入研究了材料生长过程中的一些重要问题。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

Rare earth metal seed Tb was employed for the growth of GaN nanorods. GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN.

使用稀土元素Tb作催化剂，通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜，成功制备出GaN纳米棒。X射线衍射测试显示，GaN纳米棒具有六方结构。

Our study rules out the effect of strain and composition alloying as the main factor of peak splitting. We attributed it to the existence of large amount of non-stoichiometry part in GaN/Si grown by MBE. A direct proof has been observed by HRTEM, which shows that the propagation of dislocations in the underlying layers could be blocked by using periodic AlN/GaN structure.

用三轴晶高分辨X射线衍射研究了Si(111)上生长的GaN中的应变组分问题，我们发现GaN的对称（0002）及非对称（10-12）峰在三轴晶配置下的ω-2θ扫描曲线都会发生劈裂，我们排除了应力和合金化的因素，认为在MBE方法生长的Si（111）上GaN外延层中存在一个占较大比例的稍微偏离化学配比的部分。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。