查询词典 Ga

The stability of alkaline earth sulfides can be improved by two methods, one is by coating with fluoride or oxides, and another is by forming of complex sulfides with Ga.

可通过两种方法改善碱土硫化物的稳定性，其一是通过用氟化物或氧化物的包覆，另一是通过与Ga生成的复合硫化物。

The results show that the rise time is 324 ps and the FWHM is 686 ps. The ZnO:Ga crystal has a good response to heavy charged particles. It is possible to develop an efficient alpha particle detector for use in a deuterium tritium neutron generator and other new radiation technology.

结果表明，ZnO：Ga晶体对α粒子响应的上升时间为324 ps、半高宽为686 ps，该晶体对重带电粒子具有非常好的响应特性，为伴随α粒子监测和发展新的辐射探测方法提供了新的选择。

By coincidence method, the calibrationn technique of ZnO:Ga crystal response to single heavy charged particle was established, the waveform response to the single alpha particle was measured, the experiments data were analysed, and the time response to single proton was gained from the plasma time relationship.

利用符合法原理，建立了ZnO：Ga晶体对单重带电粒子响应的标定方法，得到了该晶体对单α粒子的响应曲线，并对此进行了分析，根据等离子体时间的相对关系得到其对质子的时间响应范围。

And the results for two samples from Xiakangiayu, southeast of Xiaojue give an approximate age around 2.06～2.08 Ga for another episode of anatexis in the Paleo-Proterozoic time.

小觉西南下康家峪两块标本的测定结果，提供了该地区阜平群岩石在2.06～2.08 Ga经历了古元古代时期重熔作用改造的信息。

The densities of Ga-Sb melt s were,positively and negatively,measured by an improved Archimedean method.

采用改进的阿基米德法对Ga-Sb熔体的密度值进行升温和降温过程测定分析。

The densities of Ga-Sb melts were,positively and negatively,measured by an improved Archimedean method.

采用改进的阿基米德法对Ga-Sb熔体的密度值进行升温和降温过程测定分析。

Ga' symbolizes Buddhi and 'Na' symbolizes Vijnana.

"Ga"代表菩提，"Na"代表"识"。

A simulation is present to compare detection probability of sonobuoys array between produced by GA and standard method, and the results indicates that the GA can achieve a significant improvement in detection probability.

仿真分析了按经验布放的传统浮标阵和GA优化阵形的探测效能，结果表明该算法在复杂水声环境条件下，能有效提高被动浮标阵的探测概率。关键词反潜战；浮标布阵；遗传算法

Since Al〓Ga〓In〓P possesses larger valence band difference to GaAs and wider energy gap, minor carrier reverse injection from base and space charge region recombination in the emitter are effectively suppressed in Al〓Ga〓 In〓P/GaAs HBT. Under most circumstances, quasi-neutral base recombination current dominates the base current, and its ratio to collector current varies little with collector current and temperature, thus greatly stabilizes the current gain.

Al〓Ga〓〓In〓P/GaAs HBT由于异质结的△Ev较大，发射区禁带较宽，有力地抑制了基区少子反向注入流和发射区空间电荷区复合电流；在大多数情况下，基极电流以准中性基区复合电流为主，其与集电极电流的比值随集电极电流和温度的变化极小，稳定了电流增益。

The near band edge emission of GZO films has a blue shift with the increase of Ga doping concentration because of Burstein-Moss effect. Auger effect became obvious in Ga heavily doped ZnO which led to the quench of NBE emission.

研究表明近带边发射峰的移动主要是由Burstein-Moss效应引起；俄歇效应导致了近带边发射随Ga掺杂的增加产生猝灭现象；用微区应力模型解释了深能级跃迁发射带。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。