查询词典 Ga

The copper value of bauxitic mudstone-type deposits on the sedimentary discontinuity is 0.022～2.71×10~(-2), the value of Ga is 60～87×10~(-6) and Co is 134～ 197×10~(-6), both reach the standard of industrial utilization grade.

矿石主要元素分析显示，铝土质泥岩型铜矿的Cu含量为0.022～2.71×10~(-2)，Ga为60～87×10~(-6)、Co为134～197×10~(-6)，后两者的含量达到了铜矿

It is thus inferred that the central arogeny should have taken place between 2.55 and 2.50 Ga in North China craton.

华北东西陆块的俯冲碰撞应该发生在2.55~2.50 Ga期间。

Ga has long been thought to have been responsible for the cratonization of the North China craton.

吕梁运动(1.90～1.70 Ga)长久以来被认为是华北克拉通最终稳定固结的造山运动。

As to effects of 7 % Mn addition, post annealing and DMS layer thickness of Mn-doped LT-GaAs on their magnetic properties in three-layers structure LT-(Ga, MnAs /LT-GaAs/GaAs, the results show that the Curie temperature of DMS can be greatly increased by a decrease in thickness and via annealing treatment, and indicates the greatest Tc for (001) GaAs substrate orientation.

有关生长掺杂7 ﹪Mn，后退火处理和DMS厚度对的LT-As稀磁半导体，LT-(Ga， MnAs / LT-GaAs / GaAs三层结构磁性之研究。结果显示：DMS的居里温度随著膜厚度下降与退火处理，而大幅的上升，并且在GaAs(001)方向的基材具最高Tc。

The electron location function shows the electronic density changes at both the atomic vacancies and antisites. There is an obvious absence of electronic areas where the vacancy of Ga has the dangling bonds of N, which are favourable for the sdsorption of metal atoms. In contrast, at the vacancy of N, there is more electron distribution(ELF:0.16-0.45), forming lone electron pairs which are profitably available to combine electronegative atoms.

电子局域函数显示了表面空位和替位处的电子密度变化，表面Ga原子空缺处有非常明显的缺电子区域，悬挂键临近N的电子密度增大，有利于对金属原子的吸附；N原子空位处的ELF值为0.16-0.45，有利于同电负性较大的原子结合。

The significant vibration changes occurring in the wavenumber region ranging from about 1200 to 1320 cm-1 seem to be indicative of the formation of a new bond, P-O-C+ or Ga-O-C+.

在吸附碱性品红样品的拉曼光谱中，位于1200 ～ 1320 cm-1范围内的光谱特征表明可能有新的化学键(P-O-C+或Ga-O-C+)形成。

Buried GaAs/Al〓Ga〓 As quantum wire arrays grown by metal-organic chemical vapor deposition on V-grooved GaAs substrates.

二、用金属有机物化学气相淀积在GaAs V字形沟底制备的掩埋GaAs/Al〓Ga〓As量子线列阵。

The high solubility of CdS is ascribed to the dissociation of metal-metal bonds and edge-shared tetrahedra in these Ga-containing glasses.

CdS高的含量可归因于含Ga硫系玻璃中金属-金属键和共边连接四面体的分离。

The syenites have more depleted Sr-Nd isotopic compositions εNd(t =+3.4-+4.3, ISr=0.703 03-0.703 44 and younger Nd model ages (TDM=0.6-0.7 Ga) than the coeval mafic dikes.

样品具有较区内同时代基性岩脉更为亏损的Sr-Nd同位素组成εNd(t=+3.4～+4.3、ISr=0.703 03～0.703 44和更为年轻的Nd模式年龄(TDM=0.6～0.7 Ga)。

In the course of parametersoptimizing of models, the optimization method of sintering parameters-GA-BP, is proposed and realized.

在优化模型参数时，提出并实现了基于GA-BP的烧结工艺参数优化方法。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。