查询词典 FET

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体－宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

The MAX483MJA is an integrated Pulse Width Modulation controller and Sense FET specifically designed for Quasi-resonant off-line Switch Mode Power Supplies with minimal external components.

该MAX483MJA是一家综合脉冲宽度调制控制器和感场效应管专为准谐振离线开关电源设计的最少的外部元件。

This will vary with the NE1617 operating frequency, operating voltage and the external FETs used.

这将改变与NE1617的工作频率，工作电压和所使用的外部FET。

This will vary with the PAS006BCB-481 operating frequency, operating voltage and the external FETs used.

这将改变与PAS006BCB - 481的工作频率，工作电压和所使用的外部FET。

Often divided into two types:(1) sine wave oscillator, according to the network oscillation frequency of the different loop selected further divided into RC sinusoidal oscillator, LC sinusoidal oscillators, quartz crystal oscillators, voltage-controlled oscillator, voltage-controlled crystal oscillator and other forms;(2) non-sinusoidal oscillation device, also known as relaxation oscillator, is the use of capacitor charging and discharging and active device (transistor, FET, single-junction transistor, etc.) to generate the pulse-off square wave, rectangular wave, triangle wave, sawtooth wave, or these basic waveforms synthetic waveform and its frequency by the LC time constant charge and discharge circuits to decide.

常分两大类型：（1）正弦波振荡器，根据振荡环路中选频网络的不同，又分为RC正弦波振荡器、LC正弦波振荡器、石英晶体振荡器、压控振荡器、压控石英晶体振荡器等多种形式；（2）非正弦波振荡器，又称张弛振荡器，是利用电容充放电及有源器件（晶体管、场效应管、单结晶体管等）的通断来产生脉冲方波、矩形波、三角波、锯齿波或这些基本波形的合成波形，其工作频率由LC充放电电路的时间常数来决定。

Invented in 1960 (drawing on Shockley's work) by John Atalla, it was at first a novelty.

FET在1960年由John Atalla在Shockley工作的基础上发明的，它最初是一种新奇的事物。

In chapter 2,the basic characteristics of millimeter wave microstrip line are analyzed, and we have introduced the calculating formula of its valid permittivity and resistance speciality the discontinuity of the microstrip and the parallel coupling microstrip .

第三章介绍了微波介质谐振器稳频压控振荡器的概况，在此基础上分析了介质谐振器稳频原理和设计方法，再由FET振荡器的原理讨论了变容管电调谐的原理和设计方法。

This paper develops a RF analog predistorter by utilizing the gate-voltage controlled variable resistance characteristic of FET when it biased in a variable resistance zone. The predistorter also offers certain gain while linearizes the amplifier.

本文利用场效应管偏置于可变电阻区时的栅压控制变阻特性构成模拟射频预失真器，在对放大器线性化的同时还可提供一定的增益。

In this paper, the SOL-GEL method for growing ZrO2 film is studied. The composition, structure and electric features of Zirconium Oxide are analyzed. These are all the preparation work for studying MFIS FET.

文中研究了运用SOL-GEL方法制备ZrO2介质层的方法，并且对制备的介质层的成份、结构、电特性进行了分析，为研制MFIS作了准备。

A conjugation small molecule containing both 3T moiety and diacetylene moiety is synthesized. It will be interesting to investigate the potential application in FET of the cubic organic semiconductor formed by topology polymerization.

合成了含有三聚噻吩(3T)和可引发拓扑聚合的双炔官能团的小分子光电材料，成膜后引发拓扑聚合形成&体型&聚合物半导体材料，探讨它在场效应管中的应用将是很有意义的工作。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。