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When F is an algebraically closed field char F≠2, A is similar over F to an orthogonal matrix if and only if ( 1 ) the invariant factors of A aer self-reciprocal (2) the elementary divi sors of A of the form x...

ii当F为一个代数闭域且char≠2时，F相似于一个正交矩阵的充要条件为(1)A的不变因子是自反的。(2)A的形为(X±1)~(2k)的初等因子出现偶数次。

According to Sarkovskii's theorem, if the continuous self-map f of the closed interval has a 3-periodic orbit, then f must has an n-periodic orbit for any positive integer n But f can not has all n-periodic orbits for some n.

但f不可能有所有类型的n-周期轨。例如：则f仅有两种类型的3-周期轨中的一类。这表明Sarkovskii定理远远没有给出周期轨之间的关系的全部信息。

LetJbe a continuous map of a unit square into itself and f can be descendent. This paperpresents slecific featrue for f with homochinic points.

设f是可降的二维自映射，本文给出了这类自映射有异状点的特征──存在f的链回归点，但不是周期点，并且f的队极限点集与周期点集的交非空。

The gradient of f; its dot product with uw is the directional derivative of f in the direction of w

f f 的梯度；它与 uw 的内积为 f 在 w 方向上的方向导数

D、B. f/F. n combinations accorded with other's conclusions. Symbiotic relationship of AU126/P. n、AU126/F. n、AU126/X112 showed the unculturable phylotypes's roles in the subgingival oral flora.

d、B.f/F.n细菌组合的共生关系与文献报道一致，AU126/P.n、AU126/F.n、AU126/X112细菌对间的共生关系显示了未获培养微生物在龈下菌群中扮演的角色。

The results show that the differences of beet root production, sugar and sugar production in different species and location have reached significant levels (F.01), variety and location of interaction effects are achieved very significant (F.01) or significant levels (F.05); Considered root production, sugar and sugar production and stability, ZM203, KWS9415 are better for the stability of high-yielding varieties, D0316, ZM203 are better for the stability of the high-sugar varieties, ZM201 for the stability of a high-yielding sugar, 2003-8 varieties is good for the stability of high-yielding sugar deviation species.

结果表明：甜菜块根产量、含糖率和产量糖在不同品种和地点的差异都达到极显著水平(F.01)，品种与地点互作效应都达到极显著(F.01)或显著水平(F.05)；综合考虑块根产量、含糖率和产量糖的表现和稳定性，ZM203、KWS9415为高产稳定性较好的品种，D0316、ZM203为高糖稳定性较好的品种，ZM201为高产糖量稳定性较好的品种，2003-8为高产糖量稳定性偏差的品种。

Dropping Point is grease from the flow of semi-solid into a liquid temperature; the majority of calcium soap grease melting at 160-210 ° F, sodium soap grease 350-350 ° F, lithium soap grease for the 350-400 ° F, so temperature the use of sodium or lithium soap soap better.

流滴点乃润滑脂由半固态变成液态的温度；大部份钙皂脂融化于160-210°F，钠皂脂350-350°F，锂皂脂为350-400°F，所以高温时使用钠皂或锂皂较佳。

By means of experim ents of marker transfer,acridine orange sensitivity test,F' curring and mini-chr omosome transformation it is concluded that the F' plasmid is always in an integ rated state in the SIn strains and that the initiation of the replication of the bacterial chromosome is carried on by the integrated F' plasmid.

标记转移、吖啶橙敏感性、F′质粒消除和mini-染色体质粒转化等实验说明，Sin菌株中F′质粒始终处于整合状态，并且在40℃中细菌染色体的复制由整合状态的F′质粒所带动。

The method is as follows that the two ends of a nanometer are fixed on two pivots and an axial micro-pulling force T is applied on the nanometer; an electrode is arranged on the middle part of the side of the nanometer and an alternate voltage is applied on the electrode to motivate the nanometer to generate resonance, and therefore, the natural frequency f of the nanometer is measured and acquired; according to the material characteristics and the geometry characteristics of the nanometer as well as the boundary condition of the nanometer material, the relation between the natural frequency and the axial pulling force of the nanometer, namely the f-t curves of the nanometer, can be calculated by a vibration equation; according to the measured natural frequency f, the size of the micro-pulling force T can be acquired.

该方法将一根纳米材料的两端固定在两个支点上，给纳米材料施加一个轴向的微小拉力T；在纳米材料的侧面，位于该纳米材料的中部放置一个电极，在电极上施加一个交变的电压激励纳米材料使其发生共振，测得纳米材料的固有频率f；根据纳米材料的材料特性和几何特征以及纳米材料的边界条件，由振动方程计算出该纳米材料的固有频率与所受的轴向拉力的关系，即纳米材料的f-T曲线；根据上述测得的固有频率f，得到微小拉力T的大小。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失