查询词典 C-polymer

The invention relates to a method for the extraction of keratin from dead animal skins, characterised in the treatment of dead animal skins with a substance of general formula, or at least one corresponding alkali metal, earth alkali metal, ammonium, or phosphonium salt, the variables having the following definitions: R, R = together or independently, H, C6-C14 aryl, C1-C12 alkyl, unsubstituted or substituted with one or several SH or OH groups, R, R = together or independently, H, C6-C14 aryl, C1-C12 alkyl, unsubstituted or substituted with one or several SH or OH groups, whereby at least one of R or R is not H, or R and R are not H and two vicinal groups of R to R together may be C3-C10 alkylene, R = H, C1-C12 alkyl, H-C=O or C1-C4-Alkyl-C=O, X, X, X and X = OH, SH or NHR, whereby where Rto R contains at least one sulphur atom, at least one of X to X = SH and where R to R contains no sulphur atom, at least two of X to X= SH.

本发明涉及一种从死亡动物原皮中除去角质的方法，其特征在于用通式I的物质或至少一种对应的碱金属盐、碱土金属盐、铵盐或∴盐处理死亡动物原皮，式I中各变量定义如下：R 1 和R 4 相同或不同且选自氢、C 6 -C 14 芳基和C 1 -C 12 烷基，其未被取代或被一个或多个SH或OH基团取代；R 2 和R 3 相同或不同且选自氢、C 6 -C 14 芳基和C 1 -C 12 烷基，其未被取代或被一个或多个SH或OH基团取代，其中至少一个基团R 2 或R 3 不为氢，或R 1 和R 4 不为氢，且两个相邻基团R 1 -R 4 可以一起为C 3 -C 10 亚烷基；R 5 选自氢、C 1 -C 12 烷基、H-C＝O或C 1 -C 4 烷基-C＝O；X 1 、X 2 、X 3 和X 4 选自OH、SH和NHR 5 ，其中若R 1 -R 4 含有至少一个硫原子，则至少一个基团X 1 -X 4 为SH，以及若R 1 -R 4 不含硫原子，则至少两个基团X 1 -X 4 为SH。

Chapter 3 studies the compactness of product operators of a composition operator C〓 with the adjoint C〓 of another composition operator C〓 on weighted Bergman spaces A〓. We give some conditions in terms of angular derivatives of the inducing maps ψ and ψ for the operator C〓C〓 or C〓C〓 to be compact.

第三章研究了加权Bergman空间上的一个复合算子C〓与另一个复合算子C〓的共轭算子C〓的乘积C〓C〓与C〓C〓的紧性问题，我们用φ与ψ在〓D上的角导数的某种关系给出了C〓C〓与C〓C〓在A〓上为紧算子的一些判据。

Compared with the graphite, the coefficients of friction of the RL-C/C are lower under the same load of about 0.08-0.12, and the increasing range of the volume losses are still lower than those of the graphite. Compared with the SL pyrocarbon material, the COF and the volume loss of the SL-C/C are about 0.02-0.05 and 0.2 mm^3, lower than those under the same load. The COFs of most RL-C/C and SL-C/C specimens remain stable or decrease slightly with time, while those of the graphite and pyrocarbon specimens increase. The thickness of the integrated friction film of the RL-C/C decreases with load, but the wear surface of the SL-C/C is rough. Tough the wear surface of the graphite is integrated, the serious abrasive wear make the debris move easily and accumulate on the edge of the wear trace to form a restacked morphology. On the wear surface of the pyrocarbon material, some loosed debris, circular worn holes and flake worn out pyrocarbon has been found.

结果表明：PAN炭纤维改善C/C复合材料的摩擦磨损行为；在实验载荷范围内，与高强度石墨材料相比，含RL炭C/C复合材料的摩擦因数降低0.08~0.12；体积磨损量增幅降低；与热解炭试样相比，具有SL炭C/C复合材料的摩擦因数降低0.02~0.05，体积磨损量低0.2立方公厘左右；随着时间的延长，大部分C/C复合材料的摩擦因数基本相对稳定或呈小幅下降，而石墨、热解炭块的摩擦因数均呈不同幅度的上升；具有RL炭的C/C复合材料摩擦表面膜厚度随载荷增加而降低，具有SL炭的C/C复合材料摩擦表面较粗糙；高强石墨能形成较完整致密的摩擦膜，但磨粒磨损严重，磨屑易在摩擦膜边缘形成层状堆积；热解炭块摩擦表面磨屑堆积松散，有较多的孔洞以及热解炭层整体剥落的形貌。

Compared with the graphite, the coefficients of friction of the RL-C/C are lower under the same load of about 0.080.12, and the increasing range of the volume losses are still lower than those of the graphite. Compared with the SL pyrocarbon material, the COF and the volume loss of the SL-C/C are about 0.020.05 and 0.2 mm3, lower than those under the same load. The COFs of most RL-C/C and SL-C/C specimens remain stable or decrease slightly with time, while those of the graphite and pyrocarbon specimens increase. The thickness of the integrated friction film of the RL-C/C decreases with load, but the wear surface of the SL-C/C is rough. Tough the wear surface of the graphite is integrated, the serious abrasive wear make the debris move easily and accumulate on the edge of the wear trace to form a restacked morphology. On the wear surface of the pyrocarbon material, some loosed debris, circular worn holes and flake worn out pyrocarbon has been found.

结果表明：PAN炭纤维改善C/C复合材料的摩擦磨损行为；在实验载荷范围内，与高强度石墨材料相比，含RL炭C/C复合材料的摩擦因数降低0.08~0.12；体积磨损量增幅降低；与热解炭试样相比，具有SL炭C/C复合材料的摩擦因数降低0.02~0.05，体积磨损量低0.2 mm3左右；随着时间的延长，大部分C/C复合材料的摩擦因数基本相对稳定或呈小幅下降，而石墨、热解炭块的摩擦因数均呈不同幅度的上升；具有RL炭的C/C复合材料摩擦表面膜厚度随载荷增加而降低，具有SL炭的C/C复合材料摩擦表面较粗糙；高强石墨能形成较完整致密的摩擦膜，但磨粒磨损严重，磨屑易在摩擦膜边缘形成层状堆积；热解炭块摩擦表面磨屑堆积松散，有较多的孔洞以及热解炭层整体剥落的形貌。

In addition nC〓, nC〓, two isomers of C〓 sterene and three isomers of C〓 isoprenoid hydrocarbons were also identified from aliphatic fraction of pyrolyzed product at 200℃. After pyrolyzed at 300℃, the main aliphatic hydrocarbons were normal alkanes ranged from C〓 to C〓, with C〓 as the main peak and C〓 as the second main peak. Meanwhile, pristane, phytane and C〓 sterane were also detected. In the pyrolysates at 400℃ and 500℃, the content of saturated hydrocarbons decreased, the range of normal alkanes distribution became narrow and the main peak was nC〓. Low concentration of C〓-C〓 steranes was detected and the content of C〓-C〓 increased more.

在200℃热模拟产物饱和烃馏分中除检测出两种长链烯烃外，还检测到正十九碳单烯烃、正三十五碳双烯烃、两个碳二十八甾烯的同分异构体和三个C〓类异戊二烯烷烃化合物同分异构体。300℃模拟产物饱和烃主要为正烷烃，正烷烃的碳数分布范围为C〓-C〓，以C〓为主峰、C〓为次主峰；另外，样品中还检出姥鲛烷、植烷和C〓甾烷等化合物。400和500℃热模拟产物中的饱和烃含量下降，正烷烃系列碳数分布范围变窄，主峰碳后移至C〓，检测到低浓度的C〓-C〓甾烷系列化合物，另外，C〓-C〓藿烷系列化合物含量进一步增加。

C Supports both Firmware Hub and LPC Memory Read and Write Cycles Auto-detection of FWH and LPC Memory Cycles C Can Be Used as FWH for Intel 8xx, E7xxx, and E8xxx Series Chipsets C Can Be Used as LPC Flash for Non-Intel Chipsets Flexible, Optimized Sectoring for BIOS Applications C 16-Kbyte Top Boot Sector, Two 8-Kbyte Sectors, One 32-Kbyte Sector, Three 64-Kbyte Sectors C Or Memory Array Can Be Divided Into Four Uniform 64-Kbyte Sectors for Erasing Two Configurable Interfaces C FWH/LPC Interface for In-System Operation C Address/Address Multiplexed Interface for Programming during Manufacturing FWH/LPC Interface C Operates with the 33 MHz PCI Bus Clock C 5-signal Communication Interface Supporting Byte Reads and Writes C Two Hardware Write Protect Pins: TBL for Top Boot Sector and WP for All Other Sectors C Five General-purpose Input Pins for System Design Flexibility C Identification Pins for Multiple Device Selection C Sector Locking Registers for Individual Sector Read and Write Protection A/A Mux Interface C 11-pin Multiplexed Address and 8-pin Data Interface C Facilitates Fast In-System or Out-of-System Programming Single Voltage Operation C 3.0V to 3.6V Supply Voltage for Read and Write Operations Industry-Standard Package Options C 32-lead PLCC C 40-lead TSOP

0第0页，本页显示记录0-0，共0条记录分0页显示C支持两种固件中心和LPC内存读取和写入周期自动的FWH和LPC的记忆圈C检测可以用于英特尔8xx系列，E7xxx，E8xxx系列芯片组和C可以用作FWH与至于非英特尔芯片组的BIOS应用柔性优化扇区开放16字节热门引导扇区，两个8 - Kbyte的，一个32字节部门，3个64 - Kbyte的C或存储阵列，线性预测编码闪光可分为四个统一为两个可配置的接口擦除的FWH / LPC接口为64 - Kbyte的行业，系统运行C地址/地址多路复用在制造过程中用于编程接口的FWH /线性预测编码界面C与33 MHz的PCI总线时钟 5信号通信接口进行操作，支持字节读取和写入引导扇区的顶部和WP C两硬件写保护引脚：任务型为所有其他部门 5个通用输入的系统设计的灵活性识别的多种设备选型部门登记销锁定为个别部门读取和写保护的A /阿复用界面C 11引脚复用引脚地址和8引脚的数据界面C促进快速系统内或外的系统编程的单电压3.0V至3.6V的操作供应的读取和写入操作业界标准的封装选项电压 32 -引脚PLCC 40引脚的TSOP

Results are as followed:1 Exposure of HELF cells to BP caused c-Jun activation,and increased the activity of MAPK,PI-3K,p53 and cyclin D1 pathway.2 BP-induced c-Jun activation was inhibited by dominant negative mutants of extracellular signal-regulated protein kinase or c-Jun NH_2-terminal kinase,but not by p38,impling that JNK and ERK pathways medicate c-Jun activation induced by BP.3 Overexpression of dominant-negative mutants PI-3K and Akt potently blocked phosphorylations of c-Jun and ERK,but not JNK in response to BP,suggesting that PI-3K/Akt pathway positively regulates BP-induced c-Jun activation through ERK.4 Inhibition of p53 by its chemical or molecular inhibitor markedly increased the phosphorylation levels of c-Jun,Akt and ERK upon BP stimulation,indicating that p53 negatively medicates BP-induced c-Jun activation through PI-3K/Akt/ERK pathway.5 The cell lines expressed TAM67 exhibits no significant affecting normal cell growth properties.6 TAM67 was able to significantly block G_1-S transition and subsequent cell proliferation,suggesting that c-Jun is essential for cell cycle alternations elicited by BP.7 Overexpression of TAM67 impaired BP-induced cyclin D1 activation,decreasing expression of E2F1 and pRb,indicating that c-Jun participates in the modulation of BP-induced activation of cyclin D1/pRb/E2F1 pathway.8 Stably expression of TAM67 led to the increases in the expression levels of p53 and p21,elevating phosphorylation level of p53,clearly indicating that c-Jun regulates p53/p21 pathway activation induced by BRCollectively,PI3K/Akt/ERK pathway mediated BP-induced c-Jun activation through p53-dependent mechanism.

结果显示：1BP刺激细胞可促进c-Jun活化，并伴随着MAPK、PI-3K、p53和cyclinD1通路各组成成分的活性增强。2利用MAPK通路的显性失活突变体分别阻断细胞外信号调节激酶和c-Jun氨基末端激酶活性，均可明显抑制BP诱导的c-Jun活化，但阻断p38活性对BP引起的c-Jun活化无明显影响，提示JNK和ERK通路参与调控BP诱导的c-Jun活化。3过表达PI-3K和Akt的显性失活突变体也可显著抑制BP诱导的c-Jun活化，并降低磷酸化ERK的表达水平，但对磷酸化JNK的表达水平无明显影响，说明PI-3K/Akt通路通过ERK正性调控了BP诱导的c-Jun活化。4p53的化学/分子抑制剂能使BP作用的细胞内c-Jun活性明显增加，并同时诱导Akt和ERK的磷酸化水平的升高，表明p53可通过PI-3K/Akt/ERK通路对BP诱导的c-Jun活化进行负性调控。5随后观察转染细胞的生长情况，发现TAM67对细胞正常生长和形态无明显影响。6稳定表达TAM67可有效抑制BP诱导的S期细胞数的增加，提示c-Jun在BP致细胞周期改变的过程中发挥了重要作用。7TAM67过表达能够抑制BP诱导的cyclin D1活化，降低磷酸化Rb以及E2F1蛋白表达水平，表明c-Jun参与调控BP诱导的cyclin D1/Rb/E2F1通路的活化。8过表达TAM67可使BP刺激的细胞中p53、p21总蛋白以及p53磷酸化的表达水平明显升高，可见c-Jun也参与调控BP诱导的p53/p21通路活化。

The present invention concerns the compounds having the formula N-oxides, salts, stereoisomeric forms, racemic mixtures, prodrugs, esters and metabolites thereof, wherein R1 and R8 each are H, optionally substituted C1-6alkyl, C2-6alkenyl, C3-7cycloalkyl, aryl, Het1, Het2; R1 may also be a radical of formula (R11aR11b)NC(R10aR10b)CR9-; t is 0, 1 or 2; R2 is H or C1-6alkyl; L is -C-,-O-C-,-NR8-C-,-O-C1-6alkanediyl-C-,-NR8-C1-6alkanediyl-C-,-S2-,-O-S2-,-NR8-S2 ; R3 is C1-6alkyl, aryl, C3-7cycloalkyl, C3-7cycloalkylC1-4alkyl, or arylC1-4alkyl; R4 is H, C1-4alkylOC, carboxyl, aminoC, mono- or di(C1-4alkyl)aminoC, C3-7cycloalkyl, C2-6alkenyl, C2-6alkynyl or optionally substituted C1-6alkyl; R5 and R6 are H or C1-6alkyl.

本发明涉及右式化合物其N-氧化物、盐、立体异构形式、外消旋混合物、前药、酯及代谢物，其中R 1 及R 8 各是氢、C 1-6 烷基、C 2-6 烯基、C 3-7 环烷基、芳基、Het 1 、Het 2 ；R 1 也可以是式(R 11a R 11b )NC(R 10A R 10b )CR 9 -之基；t是0、1或2；R 2 是氢或C 1-6 烷基；L是-C-、-O-C-、-NR 8 -C-、-O-C 1-6 烷二基-C-、-NR 8 -C 1-6 烷二基-C-、-S 2 -，-O-S 2 -、-NR 8 -S 2 -；R 3 是C 1-6 烷基、芳基、C 3-7 环烷基、C 3-7 环烷基C 1-4 烷基或芳基C 1-4 烷基；R 4 是氢、C 1-4 烷基OC、羧基、氨基C、一-或二(C 1-4 烷基)氨基C、C 3-7 环烷基、C 2-6 烯基、C 2-6 炔基或任选被取代的C 1-6 烷基；R 5 及R 6 是氢或C 1-6 烷基。

Four 8-bit I/O Ports C Three 16-bit Timer/Counters C 256 Bytes Scratch Pad RAM C 8 Interrupt Sources with 4 Priority Levels C Dual Data Pointer Variable Length MOVX for Slow RAM/Peripherals High-speed Architecture C 10 to 40 MHz in Standard Mode 16K/32K Bytes On-Chip ROM Program T80C51RD2 ROMless Versions On-Chip 1024 bytes Expanded RAM C Software Selectable Size (0, 256, 512, 768, 1024 bytes) C 256 Bytes Selected at Reset for AT87C51RB2/RC2 Compatibility Keyboard Interrupt Interface on Port P1 8-bit Clock Prescaler 64K Program and Data Memory Spaces Improved X2 Mode with Independant Selection for CPU and Each Peripheral Programmable Counter Array 5 Channels with: C High-speed Output C Compare/Capture C Pulse Width Modulator C Watchdog Timer Capabilities Asynchronous Port Reset Full Duplex Enhanced UART Dedicated Baud Rate Generator for UART Low EMI Hardware Watchdog Timer (One-time Enabled with Reset-out) Power Control Modes C Idle Mode C Power-down Mode C Power-off Flag Power Supply: 2.7V to 5.5V or 2.7V to 3.6V Temperature Ranges: Commercial (0 to +70C) and Industrial (-40C to +85C) Packages: PDIL40, PLCC44, VQFP44

四8位I / O端口C款三16位定时器/计数器 256字节RAM的便笺簿 8中断源4优先级和C双数据指针MOVX在缓变长内存/外设高速架构为C 10至40 MHz的标准模式16K/32K字节的片上ROM程序T80C51RD2无ROM版本片1024字节扩展RAMC软件可选尺寸（0，256， 512，768，1024字节）C选取在重置为AT87C51RB2/RC2兼容键盘中断接口与独立的选择港口小一8位时钟分频器64K的程序和数据存储器空间的改进X2模式的CPU和256字节每个外设可编程计数器5通道的阵列：C型高速输出C比较/脉宽调制器捕获看门狗定时器复位功能异步端口全双工增强型UART的波特率发生器的UART低EMI硬件看门狗定时器电源控制模式空闲模式C掉电模式C断电旗电源：2.7V至5.5V或2.7V至3.6V温度范围：商业（0到+70 C）和工业（- 40C至+85℃）封装：PDIL40，PLCC44，VQFP44

Pinout: C High-performance 32-bit RISC Architecture C High-density 16-bit Instruction Set C Leader in MIPS/Watt C Little-endian C Embedded ICE (In-circuit Emulation) 8-, 16- and 32-bit Read and Write Support 256K Bytes of On-chip SRAM C 32-bit Data Bus C Single-clock Cycle Access Fully Programmable External Bus Interface C Maximum External Address Space of 64M Bytes C Up to Eight Chip Selects C Software Programmable 8/16-bit External Data Bus Eight-level Priority, Individually Maskable, Vectored Interrupt Controller C Four External Interrupts, including a High-priority, Low-latency Interrupt Request 32 Programmable I/O Lines Three-channel 16-bit Timer/Counter C Three External Clock Inputs C Two Multi-purpose I/O Pins per Channel Two USARTs C Two Dedicated Peripheral Data Controller Channels per USART Programmable Watchdog Timer Advanced Power-saving Features C CPU and Peripheral Can be Deactivated Individually Fully Static Operation: C 0 Hz to 75 MHz Internal Frequency Range at VDDCORE = 1.8V, 85C 2.7V to 3.6V I/O Operating Range 1.65V to 1.95V Core Operating Range -40C to +85C Temperature Range Available in 100-lead TQFP Package

M5L8253P-5引脚说明： C型高性能32位RISC架构C高密度以MIPS /瓦C小端C十六位指令集C领袖嵌入式冰8 - 16 -位和32位的读写支持256K的片上SRAM的 32位数据总线C单时钟周期存取字节完全可编程的外部总线接口C最大的外部地址空间的64M字节多达8个C芯片选择C软件可编程8位外部数据总线8级优先级，独立可屏蔽，向量中断控制器C四外部中断，其中包括一个高优先级，低延迟中断要求32个可编程I / O口线三通道16位定时器/计数器C三个外部时钟输入C两多用途I / O引脚每通道2个通用同步C两专用外设数据控制器通道每个USART可编程看门狗定时器先进的节能特性 CPU和外设可停用独立全静态工作中：C 0 Hz至75 MHz的频率范围内的VDDCORE = 1.8，85℃2.7V到3.6VI / O的操作1.65V到1.95V范围核心工作电压范围在- 40C至+85 C温度范围内使用的100引脚TQFP封装

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。