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C of C相关的网络例句

查询词典 C of C

与 C of C 相关的网络例句 [注:此内容来源于网络,仅供参考]

Compared with the graphite, the coefficients of friction of the RL-C/C are lower under the same load of about 0.08-0.12, and the increasing range of the volume losses are still lower than those of the graphite. Compared with the SL pyrocarbon material, the COF and the volume loss of the SL-C/C are about 0.02-0.05 and 0.2 mm^3, lower than those under the same load. The COFs of most RL-C/C and SL-C/C specimens remain stable or decrease slightly with time, while those of the graphite and pyrocarbon specimens increase. The thickness of the integrated friction film of the RL-C/C decreases with load, but the wear surface of the SL-C/C is rough. Tough the wear surface of the graphite is integrated, the serious abrasive wear make the debris move easily and accumulate on the edge of the wear trace to form a restacked morphology. On the wear surface of the pyrocarbon material, some loosed debris, circular worn holes and flake worn out pyrocarbon has been found.

结果表明:PAN炭纤维改善C/C复合材料的摩擦磨损行为;在实验载荷范围内,与高强度石墨材料相比,含RL炭C/C复合材料的摩擦因数降低0.08~0.12;体积磨损量增幅降低;与热解炭试样相比,具有SL炭C/C复合材料的摩擦因数降低0.02~0.05,体积磨损量低0.2立方公厘左右;随着时间的延长,大部分C/C复合材料的摩擦因数基本相对稳定或呈小幅下降,而石墨、热解炭块的摩擦因数均呈不同幅度的上升;具有RL炭的C/C复合材料摩擦表面膜厚度随载荷增加而降低,具有SL炭的C/C复合材料摩擦表面较粗糙;高强石墨能形成较完整致密的摩擦膜,但磨粒磨损严重,磨屑易在摩擦膜边缘形成层状堆积;热解炭块摩擦表面磨屑堆积松散,有较多的孔洞以及热解炭层整体剥落的形貌。

Compared with the graphite, the coefficients of friction of the RL-C/C are lower under the same load of about 0.080.12, and the increasing range of the volume losses are still lower than those of the graphite. Compared with the SL pyrocarbon material, the COF and the volume loss of the SL-C/C are about 0.020.05 and 0.2 mm3, lower than those under the same load. The COFs of most RL-C/C and SL-C/C specimens remain stable or decrease slightly with time, while those of the graphite and pyrocarbon specimens increase. The thickness of the integrated friction film of the RL-C/C decreases with load, but the wear surface of the SL-C/C is rough. Tough the wear surface of the graphite is integrated, the serious abrasive wear make the debris move easily and accumulate on the edge of the wear trace to form a restacked morphology. On the wear surface of the pyrocarbon material, some loosed debris, circular worn holes and flake worn out pyrocarbon has been found.

结果表明:PAN炭纤维改善C/C复合材料的摩擦磨损行为;在实验载荷范围内,与高强度石墨材料相比,含RL炭C/C复合材料的摩擦因数降低0.08~0.12;体积磨损量增幅降低;与热解炭试样相比,具有SL炭C/C复合材料的摩擦因数降低0.02~0.05,体积磨损量低0.2 mm3左右;随着时间的延长,大部分C/C复合材料的摩擦因数基本相对稳定或呈小幅下降,而石墨、热解炭块的摩擦因数均呈不同幅度的上升;具有RL炭的C/C复合材料摩擦表面膜厚度随载荷增加而降低,具有SL炭的C/C复合材料摩擦表面较粗糙;高强石墨能形成较完整致密的摩擦膜,但磨粒磨损严重,磨屑易在摩擦膜边缘形成层状堆积;热解炭块摩擦表面磨屑堆积松散,有较多的孔洞以及热解炭层整体剥落的形貌。

C Supports both Firmware Hub and LPC Memory Read and Write Cycles Auto-detection of FWH and LPC Memory Cycles C Can Be Used as FWH for Intel 8xx, E7xxx, and E8xxx Series Chipsets C Can Be Used as LPC Flash for Non-Intel Chipsets Flexible, Optimized Sectoring for BIOS Applications C 16-Kbyte Top Boot Sector, Two 8-Kbyte Sectors, One 32-Kbyte Sector, Three 64-Kbyte Sectors C Or Memory Array Can Be Divided Into Four Uniform 64-Kbyte Sectors for Erasing Two Configurable Interfaces C FWH/LPC Interface for In-System Operation C Address/Address Multiplexed Interface for Programming during Manufacturing FWH/LPC Interface C Operates with the 33 MHz PCI Bus Clock C 5-signal Communication Interface Supporting Byte Reads and Writes C Two Hardware Write Protect Pins: TBL for Top Boot Sector and WP for All Other Sectors C Five General-purpose Input Pins for System Design Flexibility C Identification Pins for Multiple Device Selection C Sector Locking Registers for Individual Sector Read and Write Protection A/A Mux Interface C 11-pin Multiplexed Address and 8-pin Data Interface C Facilitates Fast In-System or Out-of-System Programming Single Voltage Operation C 3.0V to 3.6V Supply Voltage for Read and Write Operations Industry-Standard Package Options C 32-lead PLCC C 40-lead TSOP

0第0页,本页显示记录0-0,共0条记录分0页显示C支持两种固件中心和LPC内存读取和写入周期自动的FWH和LPC的记忆圈C检测可以用于英特尔8xx系列,E7xxx,E8xxx系列芯片组和C可以用作FWH与至于非英特尔芯片组的BIOS应用柔性优化扇区开放16字节热门引导扇区,两个8 - Kbyte的,一个32字节部门,3个64 - Kbyte的C或存储阵列,线性预测编码闪光可分为四个统一为两个可配置的接口擦除的FWH / LPC接口为64 - Kbyte的行业,系统运行C地址/地址多路复用在制造过程中用于编程接口的FWH /线性预测编码界面C与33 MHz的PCI总线时钟 5信号通信接口进行操作,支持字节读取和写入引导扇区的顶部和WP C两硬件写保护引脚:任务型为所有其他部门 5个通用输入的系统设计的灵活性识别的多种设备选型部门登记销锁定为个别部门读取和写保护的A /阿复用界面C 11引脚复用引脚地址和8引脚的数据界面C促进快速系统内或外的系统编程的单电压3.0V至3.6V的操作供应的读取和写入操作业界标准的封装选项电压 32 -引脚PLCC 40引脚的TSOP

Pinout: C High-performance 32-bit RISC Architecture C High-density 16-bit Instruction Set C Leader in MIPS/Watt C Little-endian C Embedded ICE (In-circuit Emulation) 8-, 16- and 32-bit Read and Write Support 256K Bytes of On-chip SRAM C 32-bit Data Bus C Single-clock Cycle Access Fully Programmable External Bus Interface C Maximum External Address Space of 64M Bytes C Up to Eight Chip Selects C Software Programmable 8/16-bit External Data Bus Eight-level Priority, Individually Maskable, Vectored Interrupt Controller C Four External Interrupts, including a High-priority, Low-latency Interrupt Request 32 Programmable I/O Lines Three-channel 16-bit Timer/Counter C Three External Clock Inputs C Two Multi-purpose I/O Pins per Channel Two USARTs C Two Dedicated Peripheral Data Controller Channels per USART Programmable Watchdog Timer Advanced Power-saving Features C CPU and Peripheral Can be Deactivated Individually Fully Static Operation: C 0 Hz to 75 MHz Internal Frequency Range at VDDCORE = 1.8V, 85C 2.7V to 3.6V I/O Operating Range 1.65V to 1.95V Core Operating Range -40C to +85C Temperature Range Available in 100-lead TQFP Package

M5L8253P-5引脚说明: C型高性能32位RISC架构C高密度以MIPS /瓦C小端C十六位指令集C领袖嵌入式冰8 - 16 -位和32位的读写支持256K的片上SRAM的 32位数据总线C单时钟周期存取字节完全可编程的外部总线接口C最大的外部地址空间的64M字节多达8个C芯片选择C软件可编程8位外部数据总线8级优先级,独立可屏蔽,向量中断控制器C四外部中断,其中包括一个高优先级,低延迟中断要求32个可编程I / O口线三通道16位定时器/计数器C三个外部时钟输入C两多用途I / O引脚每通道2个通用同步C两专用外设数据控制器通道每个USART可编程看门狗定时器先进的节能特性 CPU和外设可停用独立全静态工作中:C 0 Hz至75 MHz的频率范围内的VDDCORE = 1.8,85℃2.7V到3.6VI / O的操作1.65V到1.95V范围核心工作电压范围在- 40C至+85 C温度范围内使用的100引脚TQFP封装

DBELAPUR. and the gallery is located in RAHEJAARCARD is landmark building of C.B.

DBELAPUR开车需要十几分钟,而展厅所在的RAHEJAARCARD是C.B。

In section 3.1,according to one of C.D.

在第3.1节,根据C.D。

He played the 1st, 2nd and 3rd movement of C.P.

他参赛的曲目是:C.P。

The ball is under the control of C.R. who plays an important role in organizing assault on his own. Beautiful pass.

评论员:C罗控球,在20班的阵容中他一个人承担着组织进攻的任务,漂亮,好球!

At the very 35 minutes, Liao took a yum pass of C.R., shot with the right leg. Now it's 1:0 , squad 20 sets the pace.

比赛进行到第三十五分钟时,20班廖大接C罗妙传,右脚攻门得手,现在的比分是一比零,20班领先17班。

In the 1930s, the research group of C.S.

在20世纪30年代,C.S。

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