查询词典 AND gate

We observe gate current by biasing the gate at fixed voltage and gate direct tunneling current will show two or three levels. The cause is carriers trapping in the trap site during tunneling through gate dielectrics and detrapping by thermal emission.

透过给一固定的闸极电压观察闸极电流，闸极直接穿隧电流会在多个层次间振动，其原因来自於电荷在穿越闸极层时，会掉进闸极层里面的缺陷并被抓住，但又容易藉著热从缺陷中散逸。

First, according to the model chart ruler, opens cutting the gate hole two, the decision opens the door the direction, changes the slanting tongue direction three, inside and outside the adjustment the hand direction (if: The symmetry holds the hand, does not need to exchange holds about the hand adjustment then), holds the hand like left and right AND gate to open the direction asymmetrically to be opposite, invites you: A, takes down the circlip and the edges and corners with the special-purpose circlip pliers.

一、按样板图尺，开凿门孔二、决定开门方向，改为斜舌方向三、调整内外把手方向（若：对称执手，无需调换执手调整左右即可），非对称执手如左、右与门开启方向相反，请您： A、用专用卡簧钳取下卡簧和棱角。

From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.

从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系，并且发现△V与背栅压的大小无关。

Once we can build an inverter, building an AND gate is easy just invert the outputof a NAND gate.

一旦我们可以建立一个转换，建立一个AND是很简单的，只需要转换NAND的输出。

Page 32. There are several logic gate configurations, among them the AND gate, NAND gate, OR gate, NOR gate, EXCLUSIVE OR gate and EXCLUSIVE NOR gate.

有几种逻辑门配置，其中包括：与门，非门，或门，或非门、与非门、异或门和同或门。

To prove that we can construct any boolean function using only NAND gates, we needonly show how to build an inverter, AND gate, and OR gate from a NAND (sincewe can create any boolean function using only AND, NOT, and OR).

为了证明使用NAND门我们能够构造任何布尔函数，我们只需要展示如何从一个NAND建立一个转换，与门，或门（因为我们可以用AND，OR，NOT建立任何布尔函数）。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Highland did not always win, notably in the December 2004 talks between creditors and Gate Gourmet, a European catering business that TPG bought from Swissair in the course of the airline's bankruptcy proceedings. Appearing before several dozen creditors in the London offices of Citibank, Richard Shifter, a TPG partner, disclosed that Gate Gourmet would be unable to pay interest on its debt.

高地当然也不是经常都能胜利，典型的事件是在2004年12月在债权人与欧洲餐饮业公司Gate Gourmet的对话中，TPG公司瑞士航空公司在定期航线的破产程序期间在花旗银行在伦敦的办公室，TPG公司的合伙人Richard Shifter出现在几十个债权人面前，声称Gate Gourmet公司无力支付其债务的利息。

Based on the propagation algorithm of signal probability,the decomposition algorithm of a multi-input XOR/AND gate,and the multiple segment algorithm of polarity conversion,this paper successfully applies the whole annealing genetic algorithm to find the best polarity of an RM circuit.

徐建 宁波大学电路与系统研究所，宁波 315211针对n变量逻辑函数在不同极性下所对应REED-MULLER 电路功耗和面积不同的特点，对信号几率传递算法、多输入XOR/AND门的低功耗分解算法和多成份极性转换算法进行了深入研究，成功地将整体退火遗传算法(whole annealing genetic algorithm，WAGA)应用于RM电路最佳极性的搜索。

Based on the characteristic of tristate BBPDs, only adding an AND gate can realize the FD function which has unilateral wide frequency locking range.

利用bang- bang 相位侦测器的三状态特性，只需要加入一个AND闸便可以实现单方向无限频率锁定的频率相位侦测器。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。