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错格 的英文翻译、例句

错格

基本解释 (translations)
anacoluthon  ·  anapoton

更多网络例句与错格相关的网络例句 [注:此内容来源于网络,仅供参考]

It is shown that the strengthening mechanisms came from many aspects, including the tension and compression of crystal planes, the bending and distortion of crystal lattices, the increase of dislocation density, the formation of cellular dislocations, the transformation of part of the residual austenites.

以300M超高强度钢为例,运用多种测试手段,如TEM、SEM、XRD以及金相分析技术,发现强化层组织中晶面的拉伸和压缩,晶格的弯曲和歪扭,位错密度的增高,胞状位错的形成,部分残余奥氏体向形变马氏体的转变等现象,在综合分析的基础上指出,位错强化是抗疲劳增寿的主要因素。

Screw dislocations with b=[1/4000 00], [1/200000], [3/400000], [100000] and edge dislocations with b= [1/2 00000] are determined in Al-Co-Ni decagonal quasicrystal.

发现了柏格矢大小为b=[1/400000],[1/200000],[3/400000]和[100000]的螺位错和b=[1/200000]的刃位错。

Based on traditional Fourier differentiation matrix and some modifications of the original differentiation operator, this paper refers to a new kind of method——staggered-grid Fourier pseudospectral differentiation operator.

本文在传统傅里叶微分矩阵的基础上,对原始微分算子进行改进,引入了错格微分算子的傅里叶伪谱方法。

A comparison with the analytic result for vertical displacement in homogeneous medium demonstrates that the staggered-grid differentiation operator almost achieves as the same accuracy as the analytic method.

在均匀介质中,将错格伪谱微分算子计算的结果和解析解进行比较,结果表明本文算子几乎达到了解析解的精度。

The formation of martensite is accomplished by the immigration of well-defined glissile interface (121)fcc type and its misfit dislocations can produce the lattice invariant deformation on the basis of phenomenal theory of martensitic crystallography, however, LID is retarded slightly after the migration of interphase (121)fcc, i.e.a thin plate-like zone exists without LID in martensite near the well-defined interface. When the temperature reduces to the Ms point, the lattice parameter of austenite matrix is √3/2 times that of the martensite without LID. This critical condition for spontaneous transformation agrees with that the stack fault energy in matrix is less than zero according to Olson and Cohen's nucleation model.

通过模型分析表明:fcc/bcc马氏体形核与长大过程是通过(121)fcc型择优界面推移进行的,界面上的错配位错可以完成马氏体晶体学唯象理论要求的点阵不变变形,但LID要稍滞后于界面迁移,即在马氏体形核与长大过程中推移界面新相一侧存在一未发生LID的新相薄区;当相变温度达到马氏体相变点Ms时,母相奥氏体与这一薄区的晶格常数比为√3/2,这一几何条件和Olson-Cohen形核模型中要求扩展位错层错区界面能γ≤0是等价的。

The concepts of weight lattice structure, sphere lattice structure and lienor lattice structure are introduced to describe it, some properties of the k-error lattice structure are given, and a relationship between the k-error lattice structure and the k-error linear complexity is presented. These create a elementary frame of the stability theory of the lattice structure.

提出了伪随机序列格结构的稳定性问题,引入重量格结构、球体格结构、k-错格结构等概念来描述之,给出了k-错格结构的一些基本性质,并研究了k-错格结构与k-错线性复杂度的关系。

Through the analysis of characteristics in curve of deformation tests on the four kinds of rockmasses such as claystone, siltstone, feldspar-quartz sandstone and lithic sandstone underlain the dam foundation of Tingzikou Hydropower Station, it is thought that: the test deformation of thick lithic sandstone is mainly caused by slippage deformation of rock crystal lattice ; the test deformation of feldspar-quartz sandstone is mainly from small crevices in rock, compressive deformation of rock small holes and slippage deformation of rock crystal lattice; and the test deformation of thin layer claystone in which horizontal layer is developed and siltstone is mainly from compression deformation in interlayer, small crevices in rock, compression deformation of rock small holes and slippage deformation of rock crystal lattice.

通过对亭子口水利枢纽工程坝基下卧的黏土岩、粉砂岩、长石石英砂岩和岩屑砂岩等 4 种主要岩性的岩体变形试验曲线特征进行分析,认为:厚层岩屑砂岩的试验变形量主要来自于岩石晶格错动变形,长石石英砂岩的试验变形量主要为岩石内孔隙和空隙变形以及岩石晶格错动产生的变形,而层理较发育的薄层黏土岩和粉砂岩的试验变形量主要由层间压缩变形、岩石内孔隙和空隙变形以及岩石晶格错动产生的变形共同组成。

The spectrum peaks nearby 530nm and 480 nm are corresponding with BTSD and BMD respectively. It is found from measurement that the luminescence peak from BMD is bluely shifted. The atoms of BTSD nearby dislocation core are affected by tensile stress along the Burger's vector direction leading to its band gap narrowed. In addition, there is the effect of part quantity of edge dislocation in BMD existed. Part of atoms in BMD are strained by compressive stress leading to its band gap narrowed, in other words, the wavelength from BMD is shorter than that from BTSD.

从测试结果中还发现BMD 的发光位较BTSD有所蓝移,分析认为BTSD位错芯附近原子沿伯格斯矢量方向只受到拉应力,致使禁带宽度变窄,BMD由于除了具有螺型位错的分量外还具有部分刃型位错的分量,而刃型位错中有部分原子受到压应力的作用,导致禁带宽度增宽,从而使得BMD的发光波长比BTSD短

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知,晶格失配和热应力失配是GaN异质外延中位错产生的主要原因;为此,我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试,其中尝试了侧向外延生长技术,得到了低位错密度(小于10〓/cm〓)、高质量的GaN外延层;尝试多低温缓冲层法,发现材料中的应力特性与生长系统和生长条件有关,材料中的应力与位错密度按相反方向变化;首次尝试高低温联合缓冲层法,材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大,从而导致随后高温GaN外延膜中位错密度降低,并且能够有效地抑制黄光峰。

Many nanotwins were formed in this triangular region. HREM observations showed that nanotwinning dislocations were nucleated at noncoherent twin boundaries with the local stress concentration, and the nucleation is related to the dislocation dissociations at the boundary ledges. The proceeding of these nanotwins is the homogenous shears of 1/6 [11〓] twinning dislocations, which is that the trailing 1/6 [112] twinning dislocations repel the leading twinning dislocations to proceed in the (111) planes. Therefore, twinning dislocations at the twin tip appear to be on one side of twin, forming a noncoherent twin boundary with a semilenticular shape.

在此三角区域内发现许多纳米孪晶的存在,通过高分辨电镜手段观察到纳米孪晶中的孪生位错是在具有原位应力集中的非共格入射孪晶界上形核的,纳米孪晶的形核与界面的台阶位错及其位错分解反应有关,纳米孪晶的行进是1/6[11〓]孪生位错均匀切变机制,即每一个(111)孪生面上对应一个孪生位错,其中拖尾的1/6[11〓]孪生位错将会推动领先的孪生位错行进,于是在形变孪晶头部位置的孪生位错排列常常出现在形变孪晶的一侧界面,形成一个半透镜状的非共格孪晶界。

更多网络解释与错格相关的网络解释 [注:此内容来源于网络,仅供参考]

anacoluthon:错格句(同一句中结构前后不一致)

6.Asyndeton接续词省略 | 7.anacoluthon错格句(同一句中结构前后不一致) | 8.anagram拆词命意

edge dislocation:刃型位错

位错线周围附近的原子偏离自己的平衡位置,造成晶格畸变. 位错有两种基本类型,一种叫做刃型位错(edge dislocation),另一种叫做螺型位错(screw dislocation). 实...

lattice matrix:晶格基架

晶格基架 lattice matrix | 晶格错合 lattice misfit | 晶格模型 lattice model

Angle classification of malocclusion:安格尔错he分类

个别正常 individual normal occlusion | 安格尔错he分类 angle classification of malocclusion | 上颌前突 maxillary protrusion

Angle classification of malocclusion:安格尔错分类

个别正常 individual normal occlusion | 安格尔错分类 Angle classification of malocclusion | 上颌前突 maxillary protrusion

lattice misfit:晶格错配

格子距离 lattice distance | 晶格错配 lattice misfit | 密集六角格子 lattice of hexagonal closest packing

lattice misfit:晶格错合

晶格基架 lattice matrix | 晶格错合 lattice misfit | 晶格模型 lattice model

Ms. Hagenhazel:海格海珠小姐 (再次叫错名字)

Or the Buddha, or Allah, whoever floats your boat.|或者说是佛也好,主也好 看你喜欢了 | Ms. Hagenhazel.|海格海珠小姐 (再次叫错名字) | - Call me Natalie. - Natalie.|- 还是叫我纳塔丽吧 - 纳塔丽

burgers vector:伯格斯矢量

三,位错的伯格斯矢量(Burgers vector)及位错的性质三,位错的伯格斯矢量(Burgers vector)及位错的性质

dislocations:位错

该介孔单晶的每个晶面都可以归属为{110}面,透射电子显微镜(Transmission electron micrographs, TEM)证实介孔晶格在整个晶面上规则排列(沿[110]方向),没有观察到明显的位错(dislocations),层错(fault planes)或孪晶(twinning)现象,