- 更多网络例句与退火相关的网络例句 [注：此内容来源于网络，仅供参考]
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Multiple trials is the basic concept of many parallel simulated annealing. It is to perform multiple trials at the same time to search acceptable solutions. The division simulated annealing with no communication and The clustering simulated annealing are two common types of parallel simulated annealing methods. The division simulated annealing with no communication makes each processor generate its own adjacent solution from its own current solution and compute the acceptance probability for a adjacent solution. Each of the processors searches solutions without communicating each other. Clustering simulated annealing makes each processor generate its own adjacent solution from a common current solution and compute the acceptance probability for each adjacent solution. Then, it decides which adjacent solution should be used to replace current solution according to a pre-specified rule.
许多平行模拟退火法之理论依据为多向试验，利用同一时间探索更多方向的试验来拓展搜寻的广度或深度，不进行沟通的分工模拟退火法(the division simulated annealing with no communication)以及丛集模拟退火法(the clustering simulated annealing)皆为平行化的模拟退火法，前者定义为各个处理器针对各自的起始解进行搜寻，产生各自的搜寻序列，在搜寻过程中处理器不进行任何沟通，各处理器仅针对自身之目前解进行搜寻；而后者定义为让所有处理器针对同一目前解进行运算搜寻各自的可能解，并各自决定其产出解之接受机率，最后根据事先决定之规则进行沟通比较，挑选其中一个可接受解取代目前解。
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The annealing velocity for 100 ℃ is higher than that for 25 ℃ at the same irradiation dose. The annealing degree of isochronal annealing is close to that of isothermal annealing at 100 ℃ for 168 h.
经相同总剂量辐照的器件，高温100 ℃下的退火速度远大于室温25 ℃下的退火速度。25～250 ℃下的等时退火，其退火程度接近168 h的100 ℃等温退火。
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The relations about radiation sensitive parameters with isothermal annealing time and isochronal annealing temperature are given.
对CNMOS晶体管辐照后的等温、等时退火特性进行讨论，给出辐照敏感参数在等温、等时退火过程中随退火时间、退火温度的变化关系。
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To clarify the effect of defects in luminescence, the PL spectra were measured at 10K for the implanted samples after isochronal annealing from 300℃ to 1200℃.
系统研究了高纯N〓气氛和氧化性气氛中高温退火后样品PL谱的演变，观察到在N〓下等温退火后PL谱的轻微蓝移，变温退火后PL谱的明显红移，以及在氧化性气氛下，等温和等时退火后发光峰的往复位移。
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Under the precondition of sufficient basic research of annealing theory, the advantages of foreign annealing technology are utilized to improve annealing process technology, optimize annealing lehr structure and perfect control mode and method.
在充分的退火理论基础研究前提下，借鉴国外退火技术的优点，改进退火工艺技术、优化退火窑结构、完善控制方式和控制手段。
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Compared with PF6P, the attachment of alkyl or alkoxyl groups on phenylene effectively inhibits the formation of fluorenone-based excimers and thus remarkably improves the thermal stability of the spectra.3. Morphology and phase behavior of the polymers substituted with alkyl and alkoxyl groups on phenylene were investigated by differential scanning calorimetry, X-ray diffraction and other techniques.
一方面，未取代的PF6P薄膜和烷氧基取代苯的PF60C6薄膜在空气中退火后都产生了芴酮结构，随退火温度的升高所生成的芴酮结构的含量逐渐增大；另一方面，新的长波发射随退火温度的升高其荧光寿命明显增加，因此确定PF6P空气退火薄膜的长波发射是来源于芴酮的激基缔合物。
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Due to forward-bias-induced annealing effects,the laser diode biased during irradiation is less degraded than that short-circuited,and annealing curves can be fitted sectionally with different annealing rates.
激光二极管辐射损伤存在着正向偏置退火效应，FP和DFB结构的二极管具有相似的加电退火规律，均可拟合成指数衰减形式，退火曲线可以分成退火常数不同的几段进行拟合。
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However, the value of magnetoresistance increased apparently after annealing and was 1.74 times the unannealed sample. XRD structural analysis shows that peak intensity of the annealed sample is greater than that of the unannealed one which demonstrated an increase of crystallinity.
实验结果表明：退火后样品的薄膜电阻率显著减小，是未退火样品薄膜电阻率的3.17分之一；而退火后磁电阻值则明显增加，是未退火时的1.74倍；XRD结构分析显示，退火后薄膜样品的峰值强度大于未退火样品的强度，说明样品结晶度增强。
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The results show that the capacitance of RuO2·nH2O films unannealed is unstable. Annealing at temperatures of 100, 150, 200, 250 and 300℃for 2 h respectively, the capacitance of RuO2·nH2O becomes stable after 60 cycles. The specific capacitance of RuO2·nH2O films annealed at 100℃reaches the maximum of 0.0838 F/cm2.Key words: electrodeposition; RuO2·nH2O films; capacitance; annealing temperature
结果表明，未经退火处理的RuO2·nH2O薄膜的电容性能不稳定，在循环伏安法测试中电容量随循环次数的增加而降低；将RuO2·nH2O薄膜分别在不同温度(100， 150， 200， 250和300℃)下进行的2 h的退火处理，经退火处理后的RuO2·nH2O薄膜的电容性能经过60次的循环后趋于稳定，其中，经过100℃退火处理的RuO2·nH2O薄膜的比电容最大，其比电容为0.083 8 F/cm2。
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An annealing experiment and different annealing parameters show that the coercive force and MR of the spin-valve film respectively is 358.2 A/m and 9.24% before annealing, but they have increased to 3.18 A/m and 8.54% after annealings, which proves the numerical simulating method is conductive to the improvement of the annealing conditions.
介绍了不同退火参数下的模拟实验，结果显示退火前样品的的矫顽力为358.2 A/m、MR为9.24%，退火后其分别降到3.18 A/m和8.54%，表明数值模拟方法可以较好地拟合自旋阀薄膜的退火条件及实验结果，并有助于优化退火条件。
- 更多网络解释与退火相关的网络解释 [注：此内容来源于网络，仅供参考]
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process anneal：中途退火
低温退火: Low Temperatur Anneal | 中途退火: Process Anneal | 球化退火: Spheroid Anneal
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process annealing：中途退火
低温退火 Low Temperature Annealing | 中途退火 Process Annealing | 球化退火 Spheroidizing Annealing
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full annealing：完全退火
完全退火 完全退火(full annealing) 将亚共析钢加热至AC3以上20~30℃,保温足够时间奥氏体化后,随炉缓慢冷却,从而得到接近平衡的组织,这种热处理工艺称为完全退火.
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isothermal annealing：再结晶退火
imncomplete annealing 等温退火 -tv^A+ | isothermal annealing 再结晶退火 &7pK (| | recrystallizational annealing 低温退火 Tu[Ws8-Lz(
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isothermal annealing：等温退火,全退火
isothermal adsorption | 等温吸附(作用) | isothermal annealing | 等温退火,全退火 | isothermal change | 等温变化
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annealing lehr：退火窑
annealing kiln 退火窑 | annealing lehr 退火窑 | annealing oil 退火油
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successive isochronical annealing：逐段等时退火,分阶段等时退火,阶梯等时退火
successive approximation type 逐次逼近型 | successive isochronical annealing 逐段等时退火,分阶段等时退火,阶梯等时退火 | successive substitution 递代法
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unannealed：未退火的 不退火
unanimousverdit 一致裁定 | unannealed 未退火的 不退火 | unannealedtrack 未退火径迹
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dead-soft annealing：(完全)退火,极软退火
dead-soft || 完全退火的 | dead-soft annealing || (完全)退火,极软退火 | dead-stop rail || 止车轨
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An nealing：退火,退火的
an nealed glass原片,普通玻璃 | an nealing退火,退火的 | an nealing lehr(隧道氏)退火窑(炉)