- 更多网络例句与背面电极相关的网络例句 [注：此内容来源于网络，仅供参考]
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The optimized device process of p-n Alo.85Gao.15As/GaAs solar cells have been investigated. AuBe/Au and AuGeNi/Au were evaporated and metallized to form ohmic contacts of front grids and back electrodes, respectively. Heavily-doped GaAs cap layers were removed by the NH4OH:H202:H3P04:H20 selective etching solution.
分别采用真空蒸发AuBe/Au和AuGeNi/Au并合金化形成欧姆接触制作太阳电池正面栅线和背面电极；采用NH_4OH：H_2O_2：H_3PO_4：H_2O体系的选择性腐蚀液去除高掺杂的GaAs接触层；采用真空蒸发技术制备ZnS/MgF_2双层复合减反射膜。
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On the back surface of the n-type silicon substrate (1), an ohmic electrode (2) is arranged.
在n-型硅衬底(1)的背面上设置欧姆电极(2)。
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The backplane side driving portion is structured by a column electrode driving circuit, a reversing portion, and a reversing switch.
背面侧驱动部分包括列电极驱动电路、换向部分和换向开关。
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The sealant used silicone oxide membrane by sol-gel for seal ing the solder point of leaders and sides and back of device.
采用溶胶－凝胶法[1，2]制备二氧化硅对电极引线的焊点和器件的侧、背面进行封装。
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The latter has only one PL band peaking at about 1.48eV,while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescenceform the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.
未刻划样品的PL谱只有一个峰，位于840nm(1.48eV)，而刻划样品的PL谱是双峰结构，峰位分别位于630nm(1.97eV)和840nm.800℃退火的刻划富硅二氧化硅/p-Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压10V下的电致发光强度约为同样制备的未经刻划样品在同样测试条件下的EL强度的6倍。
- 更多网络解释与背面电极相关的网络解释 [注：此内容来源于网络，仅供参考]
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nesa：奈塞
镀有透明导电膜的奈塞(nesa)玻璃板B、液晶、背面的公共电极C(亦称背电极,符号为BP)、偏光板D和漫反向玻璃E组成. 液晶材料被封装在B、C两板之间. 偏光板A、D的作用是只允许沿板上箭头方向的偏振光通过. B上加工有字形(图中用黑竖条表示数字1),