- 更多网络例句与空穴载流子相关的网络例句 [注：此内容来源于网络，仅供参考]
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Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region
少数载流子-在半导体材料中不起支配作用的移动电荷，在P 型中是电子，在N 型中是空穴。
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Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons
少数载流子-在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
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It is found that partial substitution of Sr for La induces the hole carrier evidenced by positive thermoelectric power but no bulk superconductivity is observed.
通过热电势的测量，我们发现在LaFeAsO中用少量的Sr部分取代La所获得的样品热电势为正值，说明体系中被引入了空穴载流子，但是并没有观察到超导电性。
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Raman spectrum, UV-Vis spectra, IR, NIR and XPS spectra were used to characterize the material. The result indicates that there is a conjugative effect between MWNT and bromine, which induces the change of electron distribution on the MWNT surface. It increased the car- rier density and the electrical conductivity of MWNT became higher.
通过拉曼光谱，紫外可见光谱，红外吸收光谱，近红外吸收光谱和X光电子能谱等方法研究，结果表明：溴与多壁碳纳米管之间存在共轭作用，使多壁碳纳米管表面的电子云分布发生了变化，导致空穴载流子的产生，增加了载流子浓度，提高了多壁碳纳米管的导电性能。
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PS, NIR, UV and Raman spectra indicated that there was conjugative effect between MWNT and bromine which induced the movement of π electrons from MWNT to bromine to increase the hole carrier density.
光电子能谱、近红外光谱、紫外光谱、拉曼光谱表明多壁碳纳米管与溴之间存在共轭作用，这种作用导致多壁碳纳米管上的π电子向溴偏移，产生空穴载流子。
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In this dissertation, after combining the high stability of C9 diaryl substituted fluorene derivatives with the high carrier mobility and hole-injection ability of pyrene, a series of novel blue-light-emitting materials were designed and synthesized.
在本论文中，将9位双芳基芴结构的高稳定性能和稠环芳烃芘的高载流子迁移率、空穴注入能力结合起来，设计、合成了一系列新型蓝光材料，并研究了它们的光电性能。
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Phenanthroline ligand was tuned by incorporating triphenylamine group with hole-transporting nature and oxadiazole groups with electron-transporting nature into phenanthroline, which can help their europium complexes to have improved carrier-transporting property and increased luminous efficiency.
研究的主要内容有： 1通过引入三芳胺空穴传输单元和噁二唑电子传输单元，对邻菲罗啉中性配体进行分子修饰，从而改善它的铕配合物的载流子传输性能，提高铕配合物的发光效率。
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Strained Si PMOSFET with Polycrystalline SiGe gate can enhance its performance for improvement of carrier mobility and turnable threshold voltage without impurity scattering to carrier.
应变Si pMOSFET以多晶SiGe做栅，既能提高空穴的迁移率，又能调节器件阈值电压而不会对载流子引入杂质散射，因而提高了器件性能。
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Conjugated polymers which are different from traditional semiconductor, have some unique properties. Most of them are quasi-one-dimensional systems with strong electron-phonon interaction. Their carriers are composite particles, which are different from simply electron and hole, characterized with the surrounding distortion of lattice configuration (polaron with spin 1/ 2 , bipolaron with spin 0 etc.). The transport of the carriers and the process that oppositely charged polarons combine to from exciton are believed to be of fundamental importance for electroluminescence properties.
共轭聚合物具有不同于传统半导体的特性，它们是强电-声相互作用的准一维体系，其载流子不再是简单的电子和空穴，而是伴随晶格畸变的具有内部结构的复合粒子(自旋1/2的极化子、自旋为0的双极化子等)，这些载流子的输运、以及正负极化子对复合成激子的过程在很大程度上决定着聚合物的电致发光性质。
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The intensity of NP peak of type-Ⅱ initailly increased with the increase of the excitation power and decreased thereafter. This is due to the electrons and the holes were localized in different space of typ-Ⅱ QW, then the band bending occurs when the carrier concentration increases with the power, NP peak shft to high energy. The electron transited to relaxed Si〓Ge〓 layer and combined with the localized holes radiatively.
型量子阱的NP峰随激发功率增加先增加后减小，这是由于在Ⅱ型量子阱中电子和空穴不在空间同一位置，较强激发功率下产生的高浓度载流子引起能带弯曲严重，NP峰向高能方向移动，到某一定程度时开始出现电子跃迁至弛豫Si〓Ge〓层与其中的空穴复合发光。
- 更多网络解释与空穴载流子相关的网络解释 [注：此内容来源于网络，仅供参考]
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forward bias：正向偏压
当正向偏压(Forward Bias)加在pn结时,多余的载流子(Carrier)会经过耗尽至而渗透至对方. 图6所示的是pn结能带,其中,图6(a)表示在平衡状态,图6(b)表示在正向偏压时,图6(c)表示在注入高密度电流时的电子与空穴复合产生光的情况,
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depletion layer：耗尽层
n型半导体中产生电子,p型半导体中产生空穴,在其中间产生耗尽层(Depletion Layer). 当正向偏压(Forward Bias)加在pn结时,多余的载流子(Carrier)会经过耗尽至而渗透至对方. 图6所示的是pn结能带,其中,图6(a)表示在平衡状态,图6(b)表示在正向偏压时,
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Holes：空穴
和场效应管(field-effect transistor)中只有一种 载流子主导不同,双极型晶体管的工作依赖于电子(electrons)和空穴(holes)两者的迁移. 一种在封装焊盘(package lead)和芯片绑定焊盘(chip/die bonding pad)之间连线的工艺.
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impurity：掺杂
化学元素周期表(periodic table)第III族(column III)的掺杂(impurity)材料,通过在导带中减少电子的数量,在硅上形成产生移动的空穴(Mobile hole),这些"空穴"是正电荷的载流子,因此用于制造可以接收电子的P-型(P-Type)半导体.
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MIS：金属 绝缘体 半导体
6 金属-绝缘体-半导体(MIS)结构基础本书是21世纪大学新型参考教材系列之一,书中主要讲解半导体工程学基础、半导体中的电子和空穴、载流子输送现象、pn结和金属-半导体接触、二极管和双极晶体管、金属-绝缘体-半导体(MIS)结构基础等.
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Carriers：载流子
空穴 hole | 载流子 carriers | PN结 PN junction