- 更多网络例句与硅铝层相关的网络例句 [注：此内容来源于网络，仅供参考]
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Kaolin, one of inorganic material, is composed of more parallel crystal layers of octahehedrdal alundum and crystal layers of tetrahedral silica. Rasicals K-O· are formed hydroxyl by initiator. On the surface of octahedral alundum.
高岭土是由许多平行的铝氧八面体晶层和硅氧四面体晶层组成，铝氧八面体的OH在引发剂作用下可形成自由基K-O·，然后可引发丙烯酸-丙烯酸钠进行接枝聚合。
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The experimental comparisons and researches to p-type silicon cone and wedge arrays coated by four kinds of metals with same structures are done, and show that the gold and aluminum will be hopeful cathode materials of field emission devices which operate at low vacuum and atmospheric pressure.
对结构相同的覆四种不同金属层（Au，Al，Ni，Cr）的p型硅尖锥和楔形体阵列进行了实验比较研究，表明金、铝可望成为低真空和大气压环境下工作的场发射器件的阴极材料。
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At the stage of geosyncline, the huge thick sal geo synclinal structural layer would be formed by volcanism and weathering deposition; the Caledonion granites would be form ed by remelting or mix-melting.
地槽阶段，火山作用及风化沉积作用等形成了巨厚的硅铝质地槽构造层；重熔或混熔（包括混合作用和/或同化混染作用）形成了加里东花岗岩类。
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Matal films such as aluminum and silicides are used to form low-resistance interconnections, ohmic contacts to n+,p+,and polysilicon layers,and rectifying metal-semiconductor barriers.
金属片如铝和硅化合物被用来形成低电阻互连， n+，p+的欧姆接，触多晶硅层，并整顿金属-半导体的势垒。
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According to the difference of 2p orbital electron binding energy of Ti obtained from XPS before and aftercoating, it can be inferred that Si and Al in the coating layer arecombined to TiO2 surface through chemical bond.
从XPS谱中钛的2p轨道电子结合能推测，包覆层的硅和铝是以化学键结合于TiO2表面。
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The invention discloses a method to integrate single CMOS with bulk silicon microelectromechanical system, its technical project: 1 forming isolating groove: adopting deep-groove etching, and SiO2 and polycrystal silicon filling to realize the insulation of MEMS structure and CMOS circuit; 2 making standard CMOS circuit; 3 using SiO2 and Si3N4 as mask, etching silicon on the back until exposing SiO2 at the bottom of the isolating groove, to complete the thickness control for MEMS silicon structure layer; 4 completing metalizing the CMOS circuit and masking the MEMS structure: MEMS structure region uses Al as mask and CMOS circuit region uses thick photoetching glue as mask, using DRIE to release silicon structure.
本发明公开了一种将单片CMOS与体硅微机械系统集成的方法，其技术方案为：1形成隔离槽：采用深槽刻蚀，SiO 2 和多晶硅填充，实现MEMS结构和CMOS电路的绝缘；2完成隔离槽后进行标准CMOS电路的加工；3用SiO 2 和Si 3 N 4 作掩膜，从背面腐蚀硅，直至暴露出隔离槽底部的SiO 2 ，完成MEMS硅结构层的厚度控制；4完成CMOS电路金属化和MEMS结构掩膜：MEMS结构区用铝作掩膜，CMOS电路区用厚光刻胶作掩膜，用DRIE释放硅结构。用本发明方法不仅获得了较大的质量块，而且用本发明较高的深宽比制作出的结构电容，同时实现了体硅微机械与CMOS电路的集成，显著提高MEMS传感器的精度和稳定性，具有前沿性和重要实用价值。
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It was found that the section was brittle. The scales of the pangolin were composed of the very thin prismy construction units and the folded units. The scales of the pangolin included such trace elements as S,Si,Fe,Al and Ca, besides the element of C,H,O and N. There were small amount of P element in the internal layer of the pangolin's scale.
结果表明冲击断口为脆性断口；穿山甲鳞片是由极细的棱柱结构单元和叠片结构单元混合形成的；穿山甲鳞片除含有大量的碳、氢、氧及氮元素外，硫、硅、铁、铝、钙5种元素的含量也相对较高，鳞片内层中含有少量的磷元素。
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An ultra-high strength, weldable, low alloy steel with excellent cryogenic temperature toughness in the base plate and in the heat affected zone when welded, having a tensile strength greater than 830 MPa (120 ksi) and a micro-laminate microstructure comprising austenite film layers and fine-grained martensite/lower bainite laths, is prepared by heating a steel slab comprising iron and specified weight percentages of some or all of the additives carbon, manganese, nickel, nitrogen, copper, chromium, molybdenum, silicon, niobium, vanadium, titanium, aluminum, and boron; reducing the slab to form plate in one or more passes in a temperature range in which austenite recrystallizes; finish rolling the plate in one or more passes in a temperature range below the austenite recrystallization temperature and above the Ar3 transformation temperature; quenching the finish rolled plate to a suitable Quench Stop Temperature; stopping the quenching; and either, for a period of time, holding the plate substantially isothermally at the QST or slow-cooling the plate before air cooling, or simply air cooling the plate to ambient temperature.
在基体板以及焊接时的热影响区处的低温韧性优异的超高强度、可焊接、低合金钢具有高于830MPa（120ksi）的抗拉强度，并且具有包含奥氏体薄膜层和细晶粒的马氏体／下贝氏体板条的显微层状组织，所述钢的制备过程为：加热含有铁以及特定重量百分比的添加元素的钢坯，所述添加元素为碳，锰，镍，氮，铜，铬，钼，硅，铌，钒，钛，铝，以及硼中的一些或全部；在奥氏体可发生再结晶的温度范围内，采用一个或多个道次，将所述钢坯轧制成板材；在低于奥氏体再结晶温度但高于Ar 3 转变点的温度下，采用一个或多个道次对所述板材进行终轧；将所述终轧板材淬火至一适当淬火终止温度；停止所述淬火；或者在空冷前在QST点基本等温保持所述板材一段时间，或者对所述板材进行缓慢冷却，或者只是简单地将所述板材空冷至室温。
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At this point, sheet resistivity is minimal. Meanwhile, TCR and the refiring change ratio is near to zero. Compound inorganic binder was put forward firstly. The controllable regulation on refiring change ratio can be acquired by linear principle. When the volume ratio is 1:1, the best sintering temperature is 865℃.
实验发现，复合无机粘结相对膜层电性能和重烧变化率的影响近似满足线性复合效应；采用体积比为1：1的钙铝硅玻璃和铅硼硅玻璃作为复合无机粘结相，最佳烧结温度在865℃；铅硼硅玻璃与钌酸铋置换反应生成钌酸铅&过渡层&，实现界面的渐变，使膜层性能得到改善。
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It is found that the stepcoverage is improved with the increase of temperature by using harrier layer and silicides in the aluminum metallization process of a sub-micron IC device.
在亚微米IC器件的铝金属化工艺中，采用了阻挡层和硅化物后，发现随着铝淀积温度的升高，铝的阶梯覆盖率有所提高。
- 更多网络解释与硅铝层相关的网络解释 [注：此内容来源于网络，仅供参考]
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salic horizon：硅铝质层
硅铝质层 salic horizon | 硅铝矿物 salic mineral | 扇形背斜轴 salient
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salic mineral：硅铝矿物
硅铝层上[的]|ensialic | 硅铝矿物|salic mineral | 硅镁层|sima
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epiderm：浅硅铝层
epicycloidal gear 外摆线齿轮 | epiderm 浅硅铝层 | epidermal deformation 硅铝壳表层变形
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sial：硅铝层
地壳由各种岩石组成,上部主要由沉积岩、花岗岩类和变质岩石组成,曾称硅铝层(sial)或花岗岩质层(granitic layer)其厚薄不等,在山区有时达40千米,平原区一般为10余千米,浅海区显著变薄,大洋洋底缺失.
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sial; sialsphere：硅铝层;硅铝带
硅铝圈 sial sphere | 硅铝层;硅铝带 sial; sialsphere | 聚硅土 siallitic soil
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sial sphere：硅铝圈
硅饱和岩 Si-saturated rock | 硅铝圈 sial sphere | 硅铝层;硅铝带 sial; sialsphere
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sal; sial：硅铝层;硅铝带
卤砂 sal ammoniac; salammonite | 硅铝层;硅铝带 sal; sial | 欧洲鲵(欧洲蝾螈) Salamandra
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sialic crust：硅铝壳
硅铝层 sial | 硅铝壳 sialic crust | 硅铝板块下加厚作用 sialic underplating
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sialic layer：硅铝层
shallow layer浅层 | sialic layer硅铝层 | side play侧隙
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salic mineral：硅铝矿物
硅铝层上[的]||ensialic | 硅铝矿物||salic mineral | 硅镁层||sima