砷化的

基本解释 (translations)

arseniureted

与砷化的相关的网络例句 [注：此内容来源于网络，仅供参考]

In addition, silicon-germanium is a less expensive material than the compound semiconductors such as gallium arsenide or indium phosphide that have long been used in radar systems.

此外，硅锗是一种不太昂贵的材料比化合物半导体，如砷化镓或磷化铟，长期被用于雷达系统。

Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate.

用自制的聚合硅酸铁对砷化镓生产中的含砷废水进行混凝处理。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

Oxygen that is evoluted in the anode and arsenic acid will have oxidation-reduction to produce arsenic acid. It can evolute a great amount of hydrog...

在铜含量较低时阴极析出大量氢气，阳极析出氧气，极大地浪费了电能；在析出氢气的同时逸出砷化氢，砷酸、亚砷酸在阴极直接发生还原反应也产生砷化氢气体，从而严重地污染了环境。

A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers,and the main contamination was gallium arsenide particles in suspension.

砷化镓晶片生产过程中，产生大量废水，其中主要污染物是悬浮状态的砷化镓微粒。

In our experimental results, we have transferred the GaAs solar cells from GaAs substrates onto the mirror-coated copper substrates with the base layer thickness of 1.5 μm. The photovoltaic performance of the orginal GaAs solar cell on a GaAs substrate was also measured. Under AM1.5G and without anti-reflective coatings conditions, it is found that the Jsc can increase from 12.6 mA/cm2 to 13.82 mA/cm2, while the conversion efficiency can improve from 7.91% to 8.53%. As a result, the enhanced Jsc and η data of the GaAs solar cells can be contributed by the AuGe/Au mirror between the GaAs solar cell and copper substrate.

在实验验证方面，本实验室将砷化镓太阳电池由砷化镓基板转移至铜基板上，在基极厚度1.5 μm、AM 1.5G、以及元件未披覆抗反射膜的条件下，短路电流密度可由12.6 mA/cm2提升至13.82 mA/cm2，增加9.7%，而转换效率则可由7.91%提升为8.53%，这结果显示当砷化镓太阳电池基极底部镀有金属反射层时，的确能适度地提升太阳电池的短路电流密度及转换效率。

The research was focused on application of well-developed metal damascene to copper microfabrication on GaAs and InP substrates and also verification of feasibility.

本研究将使用在矽制程上已相当成熟的金属镶嵌技术运用於砷化镓及磷化铟基材之铜金属化制程中，验证其可行性。

After As in WO3 is dissolved with NaOH solution, WO3 is coordinated by citric acid. In HCl medium, As is reduced to lwo valency As by KI and then low valency Asis reduced to gas AsH3 by SnO2 and metal Zn. After that, DDTC-Ag solution is applled as absorbent for colorimetric determinhtion.

用氢氧化钠溶液溶出三氧化钨中的砷之后以柠檬酸配位三氧化钨，在盐酸介质中用碘化钾将砷还原成低价砷，再用二氯化锡和金属锌将低价砷还原成砷化氢气体，以DDTC-Ag溶液吸收进行比色测定。

As our experiments were concerned, the after growth of InGaP, GaAs was grown at a lower temperature than that for InGaP. This made the P atoms on the InGaP surface hard to desorb and greatly reduce the thickness of InGaAsP intermixing layer.

在我们的实验中，成长完磷化铟镓后，以较低的温度成长砷化镓，这将使磷化铟镓表面的磷原子较不易脱附，因此可显著的减少磷砷化铟镓四元混合层的厚度。

GaAs RF switch MMICs for cellular phone; GaAs RF power amplifier MMICs for cellular phone; GaAs RF switch MMICs for base station; GaAs RF attenuator MMICs for base station; RF module for base station; GaAs power amplifier MMICs for CATV; MOSFET power devices;SAW resonators; SAW filters; SAW duplexers; N type and P type 4＂-6＂silicon epitaxial wafers.

这次参展的产品有：用于移动蜂窝电话的砷化镓射频单片集成电路；用于移动通信基站的射频IC及电路模块；用于CATV的砷化镓IC；MOSFET等功率器件；声表面波谐振器；声表面波滤波器；声表面波双工器；4＂-6＂N型和P型各类硅外延片。

与砷化的相关的网络解释 [注：此内容来源于网络，仅供参考]

gallium arsenide：砷化镓

这四种物质分别为: 二叔丁基过氧化物(Di-tert-butyl-peroxide):作为聚合反应的引发剂等,建议归于类别3(致突变); 砷化镓(Gallium arsenide):作为微电子中的集成电路,...2009年4月29日,美国消费品安全委员会(CPSC)发布铅涂料新指导方针.

indium arsenide：砷化铟

研究人员使用砷化铟(indium arsenide)制成的奈米线,因为它与金属之间不会形成萧特基障壁(Schottky barrier),电子可以很容易穿透奈米线与超导电极间的介面,而这也是产生邻近效应的必要条件.

arsine：(三)氢化砷)

而所需的Ⅲ-Ⅳ族化合物则在低温区段沈积出.在金属有机制程中,若要产生砷化镓,则反应腔室内会被计量注入三甲基镓 (trimethylgallium) 及三氢化砷 (arsine),进行如下的化学反应产生出砷化镓.分子束磊晶法虽可用於相同的目的,

arsine：三氢砷化

arsenous 砷的 | arsine 三氢砷化 | arsis 强音部

gaas fet：砷化镓场效应晶体管

本文对采用介质谐振器进行稳定的砷化镓场效应晶体管(GaAs FET)振荡器随温度变化而发生的长时间频率漂移从理论和实验两方面作了分析研究. 人们发现,介质材料的稳定性和品质因数有某些限制,另外谐振频率的温度特性是非常合乎线性的.

GaN：氮化镓

LED芯片又称LED芯片,英文叫做CHIP,它是制作LED灯具(LED LAMP)、LED屏幕(LED DISPLAY)、LED背光(LED BACKLIGHT)的主要材料,由磷化鎵(GaP),鎵铝砷(GaAlAs),或砷化鎵(GaAs),氮化鎵(GaN)等材质组成,其内部结构为一个PN结,

metalloid AN-FO explosive：用铝粉敏化的铵油炸药

metallized slurry explosive 用铝粉敏化的浆状炸药 | metalloid AN-FO explosive 用铝粉敏化的铵油炸药 | metalloid 准金属<如砷

arsenium：砷

arsenite | 亚砷酸盐 | arsenium | 砷 | arseniureted | 砷化的

arseniureted：砷化的

arsenite 亚砷酸盐 | arseniureted 砷化的 | arsenopyrite 毒砂

arsenization：砷疗法

arseniureted | 砷化的 | arsenization | 砷疗法 | arseno | 砷