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Moreover, there exists a morphotropic phase boundary for the composition at x= 0.33 , and the rhombohedra phase and tetragonal phase coexists for the composi tion near MPB, but the pure rhombohedra phase and tetragonal phase separately exists for the composition away from MPB.
陶瓷样品X-射线衍射相组成和相结构分析表明：所有陶瓷样品均为纯钙钛矿相，无任何其他杂相出现；且组成在x=0.33处存在一准同型相界，在该相界附近三方相和四方相共存，而远离该相界则分别为纯三方相和四方相。
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The results showed that stibium, mainly as intermetallics, distributed in β phase as well as at the interface of α/β phase.
结果表明，锑主要以金属间化合物存在于β相以及α和β相的相界处；主要力学性能与HPb59-1铅黄铜相当，锑黄铜的抗拉强度为461.72Mpa，屈服强度为213.3MPa，伸长率为15.67％。
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The results show that Bi and Sb are mainly distributed on grains and grainboundaries, and Bi on grainboundaries there are mainly simple substance Bi particles, Sb in grains are intermetallics containing stibium. The tensile strength, yield strength, elongation and variation of area of halfhard brass containing bismuth and stibium are 478.9 MPa, 295 MPa, 15.1% and 29.3% respectively. Corresponding to HPb59-1, the cutting property of brass containing bismuth and stibium is excellent. The brass containing bismuth and stibium shows excellent dezincification corrosion resistance, and the depth is 323 μm.
结果表明：添加的Bi和Sb主要以单质或化合物方式存在于无铅黄铜的相内和相界处，Bi以单质颗粒存在于相界处，Sb以化合物形式存在于相内，这对提高合金切削性能有利；添加Bi和Sb黄铜的抗拉强度为478.9 MPa，伸长率为15.1%，断面收缩率为29.3%，屈服强度大约为295 MPa；添加Bi和Sb黄铜的切削性能比HPb59-1铅黄铜的优，合金的脱锌腐蚀性能良好，脱锌层厚度约为323 μm。
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Multicomponent polymer systems; Fillers; Phase behavior; Dynamic rheology; Phase boundary; Binodal phase separation; Spinodal phase separation
工程科技I，化学，高分子化学多组分聚合物体系；填料；相行为；动态流变学；相界； Binodal相分离； spinodal相分离
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(1-x)BiScO3-xPbTiO3 ceramics exhibits excellent dielectric and piezoelectric properties in the vicinity of the morphotropic phase boundary (x=64.0% mol fraction PbTiO3), which separates the rhombohedral phase from tetragonal phase.
(1-x)BiScO3-xPbTiO3陶瓷在x=64.0%附近存在一个从菱方晶系过渡到四方晶系的准同型相界，在此相界附近材料能获得优良的介电和压电性能。
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BiScO3-xPbTiO3 ceramics exhibits excellent dielectric and piezoelectric properties in the vicinity of the morphotropic phase boundary (x=64.0% mol fraction PbTiO3), which separates the rhombohedral phase from tetragonal phase.
(1-x)BiScO3-xPbTiO3陶瓷在x=64.0％附近存在一个从菱方晶系过渡到四方晶系的准同型相界，在此相界附近材料能获得优良的介电和压电性能。
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The phenomenon demonstrates that the perovskite is a stable state with low free energy. The (1-x) PMN- x PT system has a morphotropic phase boundary separating the tetragonal and rhombohedral phases. The MPB is located in the vicinity of x = 33%. The PMN-PT ceramics near the phase boundary possesses excellent piezoelectric performance. d33 can reach to 540 pC/N. kt and kp can be up to 0.45 and 0.62, respectively.
在准同型相界附近，PMN-PT陶瓷材料具有较好的压电性能，d33可达540 pC/N，kt、kp分别可达0.45和0.62；在准同型相界附近，极化后的（1-x）PMN-xPT陶瓷材料（0.22 x 0.35）的介电常数在温度诱导FR-FT相变过程中发生突变；PMN-PT陶瓷材料在FR-FT相变过程中呈现出一个热释电峰，反应了自发极化在相变过程中发生了非线性的变化。
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Dielectric, piezoelectric and electrmechanical coupling properties of PZT and PSZT systems at high Zr content region were studied. The feature of high Kt and low Kp of PZT-based materials near F-AF phase boundary was exploited and examined, and electromachanical coupling anisotropy Kt/Kp is higher than that at the morphotropic phase boundary , Kt≥0.40, Kt/Kp≥3. 0. This phenomenon can be realized by electric field -induced AF-F phase transition and explained by coupling effect of two-sublattice in antiferroelectric unit cell.
研究了PZT和PSZT两个系统在高锆区的介电、压电和机电耦合等性能，首次发现了PZT基材料在铁电-反铁电相界处具有高Kt和低Kp的性质，机电耦合各向异性Kt/Kp也比准同型相界要高，Kt≥0.40，Kt/Kp≥3.0，并把这一现象归因于电场诱导AF-F相变和反铁电双子晶格间的强耦合作用。
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The results show that ordered phases precipitated and formed a pseudobinary system; precipitated earlier than g phase by a congruent ordering + spinodal decomposition mechanism and thus produced a nonstoicheometric ordered phase, then the nonstoicheometric g phase precipitated by a non--classical nucleation and growth mechanism at the boundaries of phases, meanwhile, both of them transformed to stoicheometric ordered phases.
研究发现该合金沉淀过程中，析出D022结构的(Ni3V)相和L12结构的Ni3Al相，二者构成伪二元系；相先于相析出，相的沉淀机制为等成分有序化+失稳分解，相在相的相界处非经典形核，二者均先形成非化学计量比有序相，之后向化学计量比有序相转变；随Al浓度增加，相析出变慢，所占比例减少，而相反之，析出越来越早且所占比例增加。
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The results show that Mg segregates to the phase bounda-ries of MC/γand γ′/γ. The thickness of Mg on MC/γ phase boundaries is latgerthan that on γ′/γ phase boundaries. The results prove that Mg is not only a grainboundary segregation element, but also a phase boundary searegation one.
结果表明，微量Mg偏析于MC和γ′相界面，而在其内部没有富集；Mg在MC相界面上的偏析厚度大于在γ′相界面的偏析厚度；试验结果及理论分析表明，Mg不仅是晶界偏析元素，更重要的是相界偏析元素。
- 更多网络解释与相界相关的网络解释 [注：此内容来源于网络，仅供参考]
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phase boundary line：相界线
相界 phase boundary | 相界线 phase boundary line | 相界交联 phase boundary crosslinking
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phase contact area：相界面积
647. phase constituent 冒号分类中复合类的组成部分,相成分 | 648. phase contact area 相界面积 | 649. phase contour 等相角线
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interphase boundary：相间边界,相界
interphase | 相间的,界面,际面,间期(细胞分裂) | interphase boundary | 相间边界,相界 | interphase boundary junction | 相间边界结,相间边界的连结
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phase boundary：相界
phase boundary crosslinking 相界交联 | phase boundary 相界 | phase change zone 相变区
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phase boundary potential：相界电位
化学双电层:chemical double layer | 相界电位:phase boundary potential | 金属电极电位:electrode potential
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phase boundary crosslinking：相界交联
phase behavior 相 特性 | phase boundary crosslinking 相界交联 | phase boundary 相界
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phase boundary crosslinking：相界有限交联
共轭线 conjugate lines | 相界有限交联 phase boundary crosslinking | 相界反应 phase boundary reaction
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phase boundary reaction：相界反应
相界有限交联 phase boundary crosslinking | 相界反应 phase boundary reaction | 相变 phase change
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phase boundary reaction：相界反应,相际反应
phase winding 相绕阻 | phase-boundary reaction 相界反应,相际反应 | phase-change material 相变材料
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Apparent Phase Boundary：表观相界
视电阻率:Apparent resistivity | 表观相界:Apparent Phase Boundary | 表观反射率:apparent reflectance