- 更多网络例句与电刻相关的网络例句 [注：此内容来源于网络，仅供参考]
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Moreover, the micro-pattern etching of electrodes and PZT thin films have been investigated, and the fast and successful etchings have been actualized with new etchants and original methods. The technics and mechanism of anisotropic etching of monocrystalline silicon have been studied deeply, for example the influences of the concentration and temperature of tetramethyl ammonium hydroxide on the rate and effect of the anisotropic etching.
此外，结合PZT铁电薄膜热释电单元红外探测器的设计和制备，对电极和PZT铁电薄膜的微图形刻蚀工艺进行了研究，采用新的刻蚀液配方和具有独创性的方法，实现了对PZT铁电薄膜和上下电极快速、成功的刻蚀。
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The etching was stopped due to electroosmosis effect when electroconductivity of the etching membrane occurred, and over etching was automatically avoided.
当刻蚀达到电通透时，在电渗流的作用下刻蚀自动停止，从而避免了过刻蚀。
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In order to overcome the wet etching disadvantage and to minimize the additional waste chemical treatment cost, therefore the purpose of this thesis is to study the customization of the batch type plasma dry etcher for power diode process, to analysis the etching mechanism and build up the simulation model for the distribution of plasma power density that will be fitted with the measurement data.
在此前提下，本论文将以客制化的多片式电浆蚀刻机为研究主体，分析其蚀刻机制并建立电浆能量密度的分析模拟模型，并以实验数据做比对，藉此建立模型模拟数据的可信度。
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This thesis described the etching characteristics of silicon nitride passivation films in the thin-film transistor structure using an enhanced capacitive-coupled high-density plasma etcher. The main parameters used in these experiments were RF source power, RF bias power, chamber pressure, SF6, O2 and He gas flow rates.
中文摘要本研究以加强型电容耦合式高密度电浆蚀刻机台来研究蚀刻氮化矽结构，实验操作参数为射频电浆源功率、射频偏压源功率、SF6、O2、He气体流量和腔体压力。
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Resistance pure water system, 3-waste treatment system, and shock-proof working-table, and about 80 sets of micro-electrical-mechanical technical equipment are installed, including AMS200 ICP plasma etching system, ICP-2B etching machine, AWB04 bonding machine, MA6/BA6 Karlsus double-face photolithography machine/bonding machine, POLI-400 chemical-mechanical-polishing tool, WL2040 aluminum-wire press welder, OPTI CAOT 22i decktop precision spin coasting system, ZSH406 automatic dicing saw system, DQ-500 plasma photoresist-removing machine, HXS150S automatic centrifugal spinner, AXTRON MOCVD metal organic chemical vapor deposit system, 4470 micro-control 4-tube diffusing furnace, type 4371 LPCVD low pressure chemical vapor deposit system, OMICRON MBE molecular beam epitaxy system, JS-3X100B magnet-control spattering equipment, PECVD-2E plasma deposit apparatus, ZZSX500C electron-beam vapor equipment, JC500-3/D magnet-control spattering-coating machine, H63-14/ZM quartz-tube cleaning machine. Measurement instruments include OLS1100 Confocal Laser Scanning Microscope, DEKTAKIII Surface Profiler, D41-11A/ZN 4-probe resistance test instrument, Nikon L150 metallurgical microscope, and so on.
中心现有80多台各种微机电工艺设备，如AMS 200深硅等离子体刻蚀系统、ICP-2B刻蚀机、AWB04键合机、MA6/BA6 Karlsuss双面光刻机和键合机、POLI-400化学机械抛光机、WL2040铝丝压焊机、OPTI CAOT 22i喷涂胶机系统、ZSH406全自动划片机、DQ-500等离子去胶机、全自动清洗甩干机、AXTRON MOCVD金属有机物化学气相沉积系统、4470微控四管扩散炉、4371LPCVD低压化学沉积系统、OMICRON分子束外延系统、JS-3X100B磁控溅射台、PECVD-2E等离子淀积台、ZZSX500C电子束蒸发台、JC500-3/D磁控溅射镀膜机、石英管清洗机，以及多种常用测试仪器，如OLS1100激光共聚焦显微镜、DEKTAK-III台阶测量仪、D41-11A/ZN四探针电阻测试仪、Nikon L150金相显微镜等。
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In this thesis, basic manufacturing processes and techniques for integrated ferroelectrics, such as thin film deposition and film patterning, have been studied. Based on these studies, lead zirconate titanate ferroelectric thin film, which has higher piezoelectric constant than normal piezoelectric materials, is used in silicon-based piezoelectric miniature microphone.
本论文深入系统的研究了硅基铁电薄膜的制备方法及刻蚀加工等集成技术，在此基础上创新性地提出将具有优异力电耦合性能的锆钛酸铅铁电薄膜用于硅基微麦克风研制的思想，完成了器件的优化设计，并成功实现了国际上首个铁电微麦克风器件原型。
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According to carving the different material quality writing, but passing a fuselage, superjacent revolution adjusts Niu adjusting the weight delineating arbitrarily.
根据刻写的不同材质，电刻笔可通过机身上方的旋转调节钮任意调节刻划的深浅度。
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This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.
此系使得有可能利用可依所需而进行选择的材质来产生任何所需厚度的介电电容器层，特别的是，本发明所具有的优点是，相较于已知技术，通孔蚀刻系可以简单许多的方式加以进行，因为其不需要蚀刻穿透在该金属轨道上方的剩余介电电容器层。
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The source and leak electrode metal layers and pixel electrode layer can be sedimented in the same or different sputtering equipments continuously, which improve the utility of sputtering equipment.
本发明通过将原来的5Mask工艺简化为3Mask工艺，共减少两次光刻过程，从而达到减少工艺步骤的目的；通过合并源漏电极光刻和像素电极光刻，使得源漏电极金属层和像素电极层可以在相同或者不同溅射设备中连续沉积，提高溅射设备的利用率。
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A process for making an electronic device which comprises applying a nonaqueous plate-resistant ink by ink jet printing to selected areas of a dielectric substrate, optionally laminated with an electrically conductive metal, exposing the plate resistant ink to actinic and/or particle beam radiation to effect polymerisation, adding one or more metal layers by electrolytic or electroless deposition, the upper layer of which is an etchresistant metal, removing the polymerised plate-resistant ink with alkali and finally removing the electrically conductive metal which are optionally directly laminated to the dielectric substrate and not protected by an upper layer of etch-resistant metal by chemical etching wherein the plate-resistant ink is substantially solvent-free and comprises: A 30 to 90 parts acrylate functional monomers free from acid groups comprising mono- or higher functionality wherein 5 to 95% by weight are mono-functional monomers; B 1 to 30 parts acrylate functional monomer containing one or more acid groups; C 0 to 20 parts polymer or prepolymer; D 0 to 20 parts radical initiator; E 0 to 5 parts colorant; F 0 to 5 parts surfactant; and where the ink has a viscosity of not greater than 30 cPs at 40 DEG C and all parts are by weight.
一种制备电子装置的方法，所述方法包括以下步骤：通过喷墨印刷在任选层压了一种或多种导电金属的介电底材的选定区域涂覆非水的阻沉积油墨，将所述阻沉积油墨暴露在光化辐射和/或微粒束辐射中以完成聚合，通过电解沉积或无电沉积增加一层或多层金属层，其中最上层的金属层为一种或多种阻蚀刻金属，用碱除去聚合的阻沉积油墨，最后通过化学蚀刻将任选直接层压在所述介电底材上并且不被一种或多种阻蚀刻金属的上层保护的导电金属除去，其中所述阻沉积油墨基本不含溶剂，并且包含以下组分：A30-90份不含酸基团的丙烯酸酯功能性单体，所述单体包括单官能或多官能单体，其中5-95％重量为单官能单体；B1-30份包含一个或多个酸基团的丙烯酸酯功能性单体；C0-20份聚合物或预聚物；D0-20份自由基引发剂；E0-5份着色剂；和F0-5份表面活性剂；其中所述油墨的粘度在40℃下不高于30cPs，并且所有的份数以重量计。
- 更多网络解释与电刻相关的网络解释 [注：此内容来源于网络，仅供参考]
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piezoelectric cutterhead：压电刻纹头
piezoelectric cutter 压电刻纹头 | piezoelectric cutterhead 压电刻纹头 | piezoelectric deformation constant 压电变形常数
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electrograph：电刻器
electroglottograph 舌动电流描记器 | electrograph 电刻器 | electrographite brush 人造石墨电刷
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glyphography：电刻术
glyphograph /电刻/电刻版/ | glyphography /电刻术/ | glyphosate /草甘膦/
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glyphography：电刻术,电气凸版法
"glyphograph ","电刻版,电气凸版,电刻" | "glyphography ","电刻术,电气凸版法" | "G-M counter tube ","盖革-弥勒计数管"
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glyphography：电刻术,电气凸板法
glyphograph | 电刻版 | glyphography | 电刻术,电气凸板法 | go ahead mode | 专函方式,向导方式
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electroengraving：电刻
electrodynamometer 电测力计 | electroengraving 电刻 | electroextraction 电解提取
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electroetching：电刻
electrodynamics电动子学 | electroetching电刻 | electrofax电子照相,电子摄影
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glyphograph：电刻版
glyphograph 电刻 | glyphograph 电刻版 | glyphosate 草甘膦
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glyphograph：电刻/电刻版
glyoxylate /乙醛酸盐/ | glyphograph /电刻/电刻版/ | glyphography /电刻术/
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glyphograph：电刻版,电气凸版,电刻
"glycerine ","甘油,丙三醇" | "glyphograph ","电刻版,电气凸版,电刻" | "glyphography ","电刻术,电气凸版法"