生长

基本解释 (translations)

develop  ·  grow  ·  growth  ·  plant  ·  planted  ·  spring  ·  springs  ·  upgrowth  ·  vegetate  ·  develops  ·  grows  ·  plants  ·  vegetated  ·  vegetates  ·  vegetating  ·  growths  ·  merisis

词组短语

break out into

与生长相关的网络例句 [注：此内容来源于网络，仅供参考]

The most suitable range of temperature is 25~30℃ and lethal temperature is 56℃ for hypha growth, the most suitable temperature is 25℃ for produce more conidiospore and lethal temperature is 56℃ for conidiospore. Within the pH range of 3~11 the hypha could grow and produce conidiospore. The optimum pH is 5~7 for hypha growth and 3, 9, 10 for produce more conidiospore. The range of glucose concentration is 2%~8% for hypha growth, the most suitable glucose concentration is 2% for hypha growth and produce more conidiospore. The effect of illumination on Bipolaris cynodontis was significance to the growth hypha and spore numbers. The whole light is advantage of hypha growth, but could not produce conidiospore. Alternation of light and darkness for 12 hours is advantage of hypha growth, as well as produce conidiospore.

菌丝最佳生长温度是25~30℃之间，在25℃时最利于产孢，菌丝生长和分生孢子的致死温度是56℃；该菌在pH 3~11范围内均能生长，产生分生孢子，菌丝生长的最适pH 5~7，产孢量最大的pH是3，9，10；糖浓度在2%~8%菌丝能生长，在糖浓度为2%时菌丝生长最好，产孢量最高；光照对病原菌的菌丝生长和产孢有明显影响，在全光照的条件下有利于菌丝的生长，但不会产孢，黑暗12h光照12h既利于菌丝生长又利于产孢，而全黑暗的条件下不利于菌丝生长和产孢。

Of a plant germinate and develop长,生长 it will even grow in plain gravel or sand.

它甚至可以在极普通的砂砾或沙子中生长。

The growth and nucleation rates of〓 cleavage face of YbYAB crystal are all very fast, because so many growth steps and growth centers were formed within only 2～3 second at the temperature near the saturate point. No spiral growth steps can be found, so growth mechanism is twodimensional nucleation. When the flux temperature increases for only 0.5℃ above the saturate point, the spiral melting holes are formed. The transformation from growth morphologies to melting morphologies is very sensitive to the temperature. When the temperature increases another 1℃, the spiral melting holes transform into two-dimensional nucleation melting holes.

YbYAB的〓解理面的生长及成核速度都非常快，在比饱和点低0.5～1℃的温度下，当生长2～3秒钟时，可以看到许多生长中心与生长台阶的形成，在较宽的台阶上还可以看到二维核的形成，没有看到螺旋中心，说明生长机理是二维成核生长；当温度比饱和点高0.5℃时，在〓解理面上形成螺旋状熔坑，这表明形貌由生长到熔化的转变与温度的关系是非常敏感的；当温度比饱和点高1.5℃时，螺旋状熔坑转变为二维成核状熔坑。

The cultural condition of PGPR strains Temperature,pH,light,cultural method,acid or alkali producing,and salt tolerance of 9 PGPR strains isolated from Gramineous Forage were tested,the results showed that all the PGPR strains could grow in the temperature range from 5℃～45℃,and optimum temperature for 178,O-6,Dry6 strains was 35℃,for X5,173,Y5,C-6 strains was 30℃,for N4 strain was 25℃～35℃,for 86 strain was 25℃;most of PGPR strains prefered to neutral or alkaline condition,strains 178,O-6,N4 and X5 were preferable to alkali condition especially;light was beneficial to PGPR's growth;all of them produce alkali;most of PGPR strains were not sensitive to NaCl concentration;all the strains were aerobiotic bacteria.

结果表明：各供试菌株对温度的适应范围较广，在5℃～45℃范围内均能生长，178、O-6、Dry6 菌株的适宜生长温度为35℃，X5、173、Y5、C-6 菌株的适宜生长温度为30℃，N4 菌株的适宜生长温度为25℃～35℃，86 菌株的适宜生长温度为25℃；大部分菌株在中性或偏碱性的条件下生长好，特别是Dry6、N4 和X5 菌株对碱性环境适应性强，在pH 值8.0 时生长最好；光照有利于菌株的生长；绝大部分菌株在3%NaCl浓度下生长良好，在5%～7% NaCl 浓度下除173 和86 菌株外，其它菌株都能生长，即对盐份的耐受性较好，且9 个菌株均为产碱菌；除173 菌株是兼性厌氧细菌外，其它都是好氧性细菌。

According to the ability of the field isolates of Gibberella zeae to grow on the PSA with varying carbendazim concentrations, three sensitivity levels of isolates were determined in vitro. The sensitive isolates could grow at 0.5 μg/ml, but could not grow at 100 μg/ml. The high resistant isloates could grow faster than R at 50 μg/ml, and also could grow at 100 μg/ml.No low resistant isolates, that could grow fast at 1.4 μg/ml but could not grow at 50 μg/ml, were found among the field isolates.

根据在0.5、1.4、50、100 μg/ml等不同浓度的含药PSA平板上能否生长，将玉蜀黍赤霉田间菌株对多菌灵的敏感性划分为：敏感、中抗和高抗等3个水平，其中S菌株在0.5 μg/ml浓度下能生长，但在≥1.4 μg/ml浓度下生长受到完全抑制；R菌株在1.4 μg/ml浓度下能快速生长，在50 μg/ml浓度下能缓慢生长，但在≥100 μg/ml浓度下不能生长；HR在≥100 μg/ml浓度下仍能生长。

Ecological characteristics:Seedlings of the tree grow vigorously in the spring with maximum height incensement in early May and a simulated growth of sigmoid shape during the growing season.

生态学特性，彰武松是属于春季生长类型的树种，其苗高累计生长呈S型曲线，全年最大生长量出现在5月上中旬；地径开始生长比高生长晚10d左右，全年出现两次生长，其中以春季生长为主；主根的生长和地径的生长交错进行，和苗高生长基本同步。

The fiber length has only little influence on the basic density within the growth rings, and significant correlation at 0.01 levels was found between the basic density and the fiber length among the different rings. Only slight negative correlation was found between the basic density and the fiber width within the growth rings, but significant positive correlation at 0.01 levels was indicated between the basic density and the fiber width among the growth rings, contrary to that of fiber length. It was demonstrated that significant positive correlations at 0.01 levels between the basic density and fiber double wall thickness, fiber length to width ratio and double wall thickness to diameter ratio, significant negative correlations at 0.01 levels between the basic density and fiber diameter and diameter to width ratio, only slight negative correlation between the basic density and fiber width both in the same growth rings and among the different growth rings. No significant correlation was found between the basic density and the vessel morphological features, nor was the tissue proportion in the same growth rings. But among the different rings, it was found there was significant positive correlation at 0.01 levels between the basic density and the fiber proportion among the different rings, and significant negative correlation at 0.01 levels between the basic density and vessel-elements proportion and ray proportion, only slight negative correlation between the basic density and the parenchym proportion. Significant or no significant negative correlation was found between the basic density and the microfibril angle in the same growth rings, but significant negative correlation was found between the basic density and the microfibril angle among the different growth rings.

生长轮内纤维长度对基本密度的影响不大，而在不同生长轮间纤维长度与基本密度达极显著正相关，纤维宽度与此相反，同一生长轮内纤维宽度与基本密度极显著负相关，不同生长轮间只有微弱负相关；基本密度与纤维双壁厚、长宽比、壁腔比在生长轮内和生长轮间均呈极显著正相关，而与胞腔直径、腔径比均呈极显著负相关，仅与纤维宽度呈微弱的负相关；导管形态对基本密度的影响不显著；同一生长轮内组织比量对基本密度的影响也不显著，但不同生长轮间基本密度与纤维比量呈极显著正相关，与导管比量和木射线比量呈极显著负相关，与轴向薄壁细胞比量仅呈不显著负相关；生长轮内基本密度与微纤丝角呈显著或不显著负相关，但在生长轮间这种负相关达到极显著水平。

Certain genera of sphere-shaped bacteria also are formed together in pairs （diploid formation; i.e., pneumococci） or as a group of four （tetrad formation; i.e., sarcinia）, while other genera appear as an individual bacterium.

霉菌在常温下比在较冷环境下要生长得更好，在0℃以下也能生长。霉菌生长的最适水分活度（Aw约为0.85但低于0.80时也能生长。在Aw大于或等于0.90时，细菌和酵母的生长比较旺盛，并且经常以牺牲霉菌生长为代价耗用可利用的营养物质来生长。直到Aw低于0.90时，霉菌生长才比较旺盛。

Certain genera of sphere-shaped bacteria also are formed together in pairs （diploid formation; i.e., pneumococci） or as a group of four （tetrad formation; i.e., sarcinia）, while other genera appear as an individual bacterium.

霉菌在常温下比在较冷环境下要生长得更好，在0℃以下也能生长。霉菌生长的最适水分活度（Aw约为0.85但低于0.80时也能生长。在Aw大于或等于0.90时，细菌和酵母的生长比较旺盛，并且常常以牺牲霉菌生长为代价耗用可利用的营养物质来生长。直到Aw低于0.90时，霉菌生长才比较旺盛。

By the combination of experimental results with theory of crystal growth, some growth models and growth mechanisms were proposed. Research results confirmed that pillar-shaped TaC whisker with spherical droplet at the end grew via a vapor-liquid-solid mechanism, pillar-shaped whisker with pyramid-like end was formed via a vapor-solid mechanism, awl-shaped TaC whisker with zigzag end formed via a liquid-solid mechanism, awl-shaped TaC whisker with growth step at the end has a growth mechanism of screw dislocation mechanism. The growth mechanism of dumbbell-shaped MgO nanowhisker and NaCl particle-decorated MgO nanowhisker is VS; C and MgO powder-yielded MgO nanowhisker was formed via a VLS mechanism, Mg powder-yielded MgO microwhisker and MgO microsized or nanosized crystal sheet grew via a VS mechanism. In the Si and SiO〓 nanostructures, Si nanowires formed in higher-temperature zone grew via oxide-assistant mechanism, while Si nanowires or nanorods formed in lower-temperature zone have a growth mechanism of VLS, and the growth mechanism of SiO〓 nanowires is VS.

研究确定呈平直柱状且头部带有球形颗粒的TaC晶须是通过气-液-固机制生长；头部呈之字型的锥状TaC晶须则通过液-固机制生长；晶须头部为四棱锥状的粗长TaC晶须的生长机制是VS机制；顶端呈锥状且有生长台阶的TaC晶须通过螺位错机制生长；哑铃状氧化镁晶须和氯化钠颗粒修饰的氧化镁纳米晶须的生长机制是气-固机制：当采用C+MgO粉提Mg源时形成的氧化镁纳米晶须的生长机制是VLS，而采用直接热蒸发Mg粉时得到的氧化镁微米晶须的生长机制为VS，纳米和微米晶片的生长机制均为VS机制；在高温区，硅纳米线的生长机制是助氧化机制，在低温区硅纳米线和纳米棒的生长机制是VLS机制，而氧化硅纳米线的生长中VS机制占主导地位。

与生长相关的网络解释 [注：此内容来源于网络，仅供参考]

apical growth：顶端生长[植物茎的顶端生长点细胞增殖并长大的生长方式]

apical dormancy 顶芽休眠[因生长侧枝而使顶芽暂不生长] | apical growth 顶端生长[植物茎的顶端生长点细胞增殖并长大的生长方式] | apical point 生长点

auxanometer：生长计,植物生长测定器 生長計

autumnal circulation 秋季循环 秋季循環期 Y | auxanometer 生长计,植物生长测定器 生長計 Y | auxesis 增大,细胞增大性生长 誘發細胞分裂 N

growing degree-day：(植物生长所需热量的计算单位)生长度日

growing chain end 生长链端 | growing degree-day (植物生长所需热量的计算单位)生长度日 | growing film 生长膜

crystal grower：晶体生长器,单晶生长器

crystal group 晶群,晶族 | crystal grower 晶体生长器,单晶生长器 | crystal growing 晶体生长

intercalary growth：居间生长

居间生长(intercalary growth) 定义由穿插在成熟组织之间的居间分生组织,经过细胞分裂、生长和分化而形成成熟结构的生长过程,称居间生长. 举例如禾本科植物茎节间和某些单子叶植物叶和叶鞘的基部、花生雌蕊柄的基部等,都有居间生长现象,

intercalary growth：居间生长,居间生长,节间生长

intercalary deletion 中间缺失 | intercalary growth 居间生长,居间生长,节间生长 | intercalary inflorescence 居间花序,居间花序

luxuriant growth：旺盛生长,繁茂生长,植物生长茂盛

luxmeter 照度计 | luxuriant growth 旺盛生长,繁茂生长,植物生长茂盛 | luxury 美食,美衣

growth stimulant：生长刺激剂,生长刺激物

growth step 生长阶 | growth stimulant 生长刺激剂,生长刺激物 | growth stimulation 生长刺激

anisometric growth：不等量生长;非等比生长;非同形生长

anisometric deposit 不等粒沉积 | anisometric growth 不等量生长;非等比生长;非同形生长 | anisometric 不等轴的;不等粒的

auxograph：生长记录器 体积变化记录器 植物生长自记计

auxograph group | 生长记录器 | auxograph | 生长记录器 体积变化记录器 植物生长自记计 | auxoheterotrophic | 生长素他给性的