溅射

基本解释 (translations)

sputtering  ·  spluttering

与溅射相关的网络例句 [注：此内容来源于网络，仅供参考]

Nickel chromium alloy was cheaper than nickel, and its sputtering aggradation velocity was more than that of nickel, so the immediacy costs of sputtering nickel chromium alloy electrode was less than that of sputtering nickel electrode.

镍铬合金价格低于镍金属，溅射沉积速率也比镍金属要快，所以溅射镍铬电极的直接成本低于溅射镍电极。

Investigation was made of the sputtering rate in glow discharge lamp with re-lation to constituent of 25 different specimens of 6 binary systems, namely, Cr-Fe, Bi-Sb,Cu-Zn, Ag-Cu, Al-Zn and Cd-Sn, by measuring mass loss after each sputtering under con-stant Ar pressure and voltage applied. The correlation, in general, between sputtering rate andconcentration of constituent of these non-intermetallic binary alloys obeys the hyperbolic lawunder steady state, yet may be approximately regarded as linear only on certain special condi-tion if the two components of the alloys with similar sputtering rates.

在恒定气压和电压条件下，用测量溅射减量的方法，系统研究了Cr—Fe，Bi-Sb，Cu—Zn，Ag—Cu，Al-Zn和Cd—Sn六个系统的25个试样在辉光放电灯中溅射率与组分的关系结果表明；阴极溅射在稳态时，二元合金的溅射率与组元浓度的普遍关系是双曲线，只有在某些特殊情况下，两组元的溅射率相差不大时，可以近似看成线性关系。

Testing results showed that in a sputtering cycle the sputtering time for Cu/Ga target has greatest effect on the final element distributi

实验中发现，在一个溅射周期中，Cu/Ga合金靶溅射时间对最后成分影响最大，其次是In靶溅射时间，非溅射时间的长短对成分也有影响。

In chapter 2, we systematically introduced the theory and process of radio frequency magnetron sputtering and ion beam deposition sputtering.

第二章较为系统地介绍了溅射机理以及磁控溅射镀膜和离子束溅射镀膜机理和工艺特点，薄膜的沉积过程。

Finally, we hold that there were a large number of ions in the sputtering space, which would be bounded by Lorentz force and gradient magnetic field force and their interactive forces, thus resulting in the generation of the spots and loops.

最终我们认为，在我们的溅射空间中，存在着大量溅射靶材的离子，溅射靶材的离子在溅射过程中会受到洛仑兹力作用、梯度磁场力的作用，以及他们的相互作用力；导致了斑环的产生。

We are also distributor of the following companies:Pfeiffer Vacuum-turbo molecular pump, other types of pumps, gauges, Helium leak detector, mass spectrometer; Maxtek, Inc-Quartz crystal thin film deposition controller and sensors; Telemark Inc-E-beam source and power supply, optical thin film monitor; Comdel, Inc-DC and RF power supply; Angstrom Sciences-Magnetron target and materials; Oxford Scientific Limited-Atom sources; Plasma Quest Ltd-Plasma systems for coating and etching; Sentech Instruments GmbH-Ellipsometers.

我们代理的产品包括德国普发真空的全线真空产品(分子泵等各种真空泵，真空计，检漏仪，质谱仪，各种真空零部件)；美国美泰克公司的石英晶体膜厚监测仪，传感器；美国泰利玛科公司的电子枪和光学膜厚控制仪等；美国康戴尔公司的射频，中频和直流电源；英国牛津科学公司的微波等离子体源，电子束蒸发源，原子源，高能电子衍射枪；英国PQL公司等离子体溅射镀膜设备，美国安斯超科学公司的磁控溅射阴极及溅射靶材，德国森泰科仪器公司的椭偏膜厚测量仪和等离子刻蚀沉积设备等。

Results showed that the kinetics of photocatalytic degradation of ethylene by TiO2/ACF desoposited Pt in the simulated cold storage environment for horticultural products could be described using the pseudo first-order equation. The prepared TiO2/ACF-Pt, in the process of which Pt was initially deposited on the surface of ACF and then TiO2 was coated, would promote the activity of ethylene decomposing. When ion sputtering time was 60 seconds (Pt/Ti atomic concentration ratio was 0.112), the apparent rate constant of the reaction of TiO2/ACF-Pt was 1.16 times as much as that of TiO2/ACF. The micrographic structure of ACF was not damaged and an excessive porous structure, which was contributive to absorbing the diluted ethylene, was obtained by the way of ion sputtering Pt.

结果表明：在模拟园艺产品冷藏环境中，TiO2 /ACF-Pt光催化降解乙烯的动力学可用表观一级速率方程来描述；ACF表面先溅射沉积Pt，再进行TiO2附着方案，能提高降解乙烯的能力，当溅射时间为60 s（Pt/Ti原子浓度比为0.112）时，表观一级速率常数是未溅射Pt的1.16倍；TiO2/ACF-Pt的制备方法，对ACF形貌结构没有破坏，并能得到有利于对微量乙烯的吸附的多孔结构。

The contamination of the different target, the oxidation and the carbonization during the sputtering process and the crystal structure of Pd all have the significant influence in the performance of the rare earth films.

研究结果表明，衬底温度为150℃，Ar~+的溅射气压为4.5×10~(-1)Pa时比较适宜；溅射过程中，不同溅射靶之间的相互污染、氧化、碳化以及Pd保护层结晶性能的好坏等都对稀土薄膜的性能有很大影响。

The tantalum grains have at least a 40 percent (222) direction orientation ratio and less than a 15 percent (110) direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity, the tantalum body being free of (200)-(222) direction banding detectable by Electron Back-Scattering Diffraction and wherein the sputter target has a purity of at least 99.99 percent.

所述钽晶粒在远离溅射面的原子输送方向上具有至少为40％的(222)晶向的取向比率和小于15％的(110)晶向的取向比率，用于增强溅射均匀度，所述钽本体没有可采用电子背散射衍射法而检测到的(200)-(222)晶向条带并且其中所述溅射靶的纯度至少达到99.99％。

There are two vacuum plating methods. One is CVD. The other is PVD. PVD includes evaporation plating (arc, electronic gun and resistance wire) and sputtering plating (DC magnetron Mid-frequency and RF).

真空镀膜技术中经常使用的方法主要有：蒸发镀膜（包括电弧蒸发、电子枪蒸发、电阻丝蒸发等技术）、溅射镀膜（包括直流磁控溅射、中频磁控溅射、射频溅射等技术），这些方法统称物理气相沉积，简称为PVD。

与溅射相关的网络解释 [注：此内容来源于网络，仅供参考]

ion sputter deposition：溅射蒸涂

ion rocket 离子火箭 | ion sputter deposition 溅射蒸涂 | ion sputter etching 溅射刻蚀

magnetron sputtering：磁控溅射沉积技术

中频磁控溅射:medium frequency magnetron sputtering | 磁控溅射沉积技术:magnetron sputtering | 直流磁控溅射:DC magnetron sputtering

Magnetron spattering：磁控溅射

磁控溅射:Magnetron-sputter | 磁控溅射:Magnetron spattering | 磁控溅射:magnetron sputteringdeposition

sputter deposition：溅射淀积

sputter cleaning 溅射清洗 | sputter deposition 溅射淀积 | sputter etching 溅射蚀刻

sputtering yield：溅射率

物体表面放射出来,此现象称为溅射,溅射率(sputtering yield)为每一入射离子可1.具良好阶梯覆盖(Step Coverage)性大大拓宽应用的范围,称之为反应性溅镀法.

sputtering yield：溅射效率,溅镀率,溅镀系数,溅射率,溅射系数

sputtering target 溅射靶 | sputtering yield 溅射效率,溅镀率,溅镀系数,溅射率,溅射系数 | sputum examination for tubercle bacillus 痰结核菌检查

Splash Boder damage：溅射边界伤害...?不知道什么意思

Splash Damage Range:溅射伤害范围,估计是火箭炮之类的爆炸后的伤害范围吧....猜的... | Splash Boder damage:溅射边界伤害...?不知道什么意思 | Firing Delay:开火延迟,应该是射速的意思

sputtered film：溅射薄膜

sputtered dielectric film 溅射介质薄膜 | sputtered film 溅射薄膜 | sputtering 溅射

sputtered layer：溅射膜层

sputtered film disk ==> 溅射薄膜磁盘 | sputtered layer ==> 溅射膜层 | sputterer ==> 溅射反应器

sputtered dielectric film：溅射介质薄膜

sputter etching 溅射蚀刻 | sputtered dielectric film 溅射介质薄膜 | sputtered film 溅射薄膜