氮化法

基本解释 (translations)

nitrizing

与氮化法相关的网络例句 [注：此内容来源于网络，仅供参考]

METHODS: A limb ischemia-reperfusion injury model in rats was established. The animals were randomly divided into three groups: control group, IR group and IPC group. The contents of diamide oxidase, nitric oxide, endothelin-1 (ET-1) and ratio of nitric oxide/endothelin-1 (NO/ET-1) in the plasma and the gut were measured. The leavels of myeloperoxidase, ratio of DNA chain, total nitric oxide synthase, inducible nitric oxide synthase and constitutive nitric oxide synthase in the gut were determined.

雄性Wistar大鼠18只，随机分为对照组，缺血再灌注组和缺血预适应组，每组6只，分别测定血浆和小肠组织二氨氧化酶、一氧化氮、内皮素-1(ET-1)、NO/ET-1比值的含量变化及小肠组织的髓过氧化物酶、DNA双链百分率(ratio of DNA chain %)、总一氧化氮合酶、诱导型一氧化氮合酶、结构型一氧化氮合酶的水平；免疫组化法检测小肠组织的诱导型一氧化氮合酶、内皮型一氧化氮合酶的表达。

The reducing product is monoamine and diamine with 72 % yield. Based on the characteristic of mo- noamine with strong fluorescence, this paper has analyzed the content of mo- noamine and diamine by diazotization method combined...

根据单胺具有强烈荧光的特点，采用重氮化法和荧光分光光度法相结合，测出混合胺中的单胺与双胺合量分别为22.54％和67.22％，其余是无机盐。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的，至今人们对PECVD 氮化硅薄膜的研究还很不成熟，尚处于研究探索的阶段，从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究；与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

To prepare antibodies against MG, Pararosaniline was bound to BSA or OVA using nitrous acid as the coupling reagent, and using UV spectrophotometer scanning identified the conjugates.

为了制备针对MG及其代谢产物的抗体，将MG代谢相似物之一副品红用重氮化法偶联到牛血清白蛋白，获得免疫原BSA-PA。

TiN -Al2O3 composite material was prepared by aluminothermic reduction of TiO2 in coke bed from mixtures of TiO2 powder and metal AI powder.

以金属铝粉和钛白粉为原料，在匣钵中埋炭保护气氛下采用铝热还原氮化法制备了TiN-Al2O3复合材料。

Using metal Al and TiO2 powders as starting materials TiN/Al2O3 composite ceramics were prepared by aluminothermic reduction of TiO2 in coke bed and a flowing nitrogen stream.

以金属铝粉和钛白粉为原料，在流动氮气和匣钵埋碳保护气氛下采用铝热还原氮化法制备了TiN/刚玉复合陶瓷。

Aminobenzoic acid in procaine hydrochlorid compound injections was determined by differential spectrophotometry and Glenn's method of orthogonal function.

复方盐酸普鲁卜因注射液是盐酸普鲁卡因和对氨基苯甲酸为主要成份的注射剂，一用重氮化法必须分离后进行测定〔'〕。

Five synthesis methods of AlN powder were discussed, namely direct nitrogenation of Al powder, carbothermal reduction of Al2O3, chemical vapor deposition, sol-gel method, self-propagating high-temperature synthesis and plasma chemical synthesis. The choice of AlN sintering additives and five sintering technologies were analysed, namely hot pressing sintering, pressureless sintering, spark plasma sintering, microwave sintering and self-propagating sintering. The preparation processes of AlN substrate and its influencing factors were expounded.

介绍AlN陶瓷的典型性能和导热机理；讨论AlN粉末的5种合成方法：铝粉直接氮化法、Al2O3碳热还原法、化学气相沉积法、溶胶凝胶法、自蔓延高温合成法和等离子化学合成法；分析AlN烧结助剂的选择和5种烧结工艺：热压烧结、无压烧结、放电等离子烧结、微波烧结及自蔓延烧结；阐述AlN基板的制备工艺及其影响因素。

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。

与氮化法相关的网络解释 [注：此内容来源于网络，仅供参考]

burnett process：氮化锌全吸收法

Burnett effect 巴涅特旋转转化效应 | burnett process 氮化锌全吸收法 | Burnett's disinfecting fluid 伯纳特氏消毒液,伯内特氏消毒液

diazotization titration：重氮化滴定法

重氮化反应:diazotization reaction | 重氮化滴定法:diazotization titration | 亚硝基化反应:nitrozation reaction

diazotization titration：重氮化滴定

diazotization 重氮化 | diazotization titration 重氮化滴定 | diazotype 重氮印相法

diazotization reaction：重氮化反应

亚硝酸钠法:sodium nitrite method | 重氮化反应:diazotization reaction | 重氮化滴定法:diazotization titration

diazotization rebehave：重氮化反应

亚硝酸钠法:sodium nitrite method | 重氮化反应:diazotization rebehave | 重氮化滴定法:diazotization titration

GaN LED：氮化镓发光二极体

中文摘要 氮化矽与二氧化矽是两种在IC半导体中广泛被应用的介电材料,本论文系利用电浆辅助化学气相沉积法在氮化镓发光二极体(GaN LED)上来沉积介电保护层,介电保护层不只能够保护元件,更能将发光二极体因电子、电洞所复合所放射的光子,

gaseous cyaniding：气体氮化法

凹口剪床gap shear | 气体氮化法gaseous cyaniding | 气体遮蔽gas shield

liquid pressure nitriding：加压液体氮化法

liquid pressure gauge 液体压力计 | liquid pressure nitriding 加压液体氮化法 | liquid pressure transducer 液压转换器

ion nitriding：电离化、氮化

ion neutralizing spectroscopy | 离子中和谱法[INS] | ion nitriding | 电离化、氮化 | ion optics | 离子光学

diazo reaction：重氮化反应

diazo-printer 重氮复印机 | diazo-reaction 重氮化反应 | diazo-thermography 重氮热敏成相法