- 更多网络例句与氮化相关的网络例句 [注：此内容来源于网络，仅供参考]
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AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.
氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。
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The results showed that the TiN andN films are polycrystalline phase. The properties and structure of TiN films are mainly determined by the N2 mass flow rate, and as the N2 mass flow rate increases, the structure of the TiN films transforms to f.c.c. type leading to better the properties of films. The presence of negative bias voltage can optimize the grain of TiN films, lower the defect proportion and denser the films, which improves the hardness of films. The TiN films conform to the free carrier absorption mechanism and there are many of free electrons with lower N content in TiN films. With the increase of N content, the quantity of free electrons and reflectivity of films decrease, and the plasma frequence shifts to the lower energy, which leads to the regular change of colors of films from silver, yellowy, golden to yellow-red, meanwhile the lightness of films decreases. The goldenN film consists of TiN and ZrN phase, but belongs to a sigle f.c.c. structure with (111) preferred orientation. The Zr-doping dosen't change the position of the valance band, conduction band and forbidden band ofN film, but leads to the presence of new energy levels, which is the reason thatN film remains golden. The transparent hard films with good corrosion resistance and high hardness have been prepared and the further reseachs showed that the grain size of those films is by far smaller than the wave length and the width of forbidden band of those films is very broad, is the reasons that those films are transparent.
研究表明：氮化钛和N 薄膜为多晶态，氮流量决定了氮化钛薄膜的结构和性能，增加氮流量能使氮化钛薄膜的结构向面心立方结构转变，从而得到性能良好的氮化钛薄膜；施加负偏压能优化氮化钛晶粒和减少薄膜中的缺陷，使膜层变得更致密，从而提高薄膜硬度；氮化钛主要遵循自由载流子光吸收，氮含量较少时薄膜中的自由电子数目较多，随着氮含量的增加，薄膜中的自由电子数目不断减少，反射率逐渐降低，等离子体频率向低能端移动，从而使薄膜颜色出现规律变化，由金属色银白色到淡黄、金黄再到红黄，并且薄膜亮度呈下降趋势；金黄色的N 薄膜中存在TiN 和ZrN 的分离相，但其为单一的面心立方结构并具有(111)面择优取向；相对于TiN 薄膜，Zr 掺杂后，并没有使薄膜的导带、价带和禁带发生变化，只是在TiN 禁带内增加了新能级，这也正是掺杂Zr 后，薄膜仍
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With increasing the percent of azide substitution, maximum temperature of thermal degradation is also increscent, a linear relationship exists between the glass transition temperature of B and percent of azide substitution.
随着叠氮化反应程度的加深，最大热分解温度升高，不同程度叠氮化取代率的叠氮聚醚多元醇的玻璃化温度与叠氮化取代率成线性关系。
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The well type gas nitrogenation oven uses the multi-layered multistage multi-link multi-spot assignment type ammonia input mode, enables the active nitrogen member fast evenly with the work piece surface union, forms the even fast nitrided level, the coordinate high speed spiral air flue, the effective addressing work piece blind hole and the deep hole nitriding craft, nitrides strongly by the microcomputer programmed control infiltrates, the diffusion technology heating curve.
井式气体氮化炉采用多层多段多环多点分配式氨气输入方式，使活性氮气分子能快速均匀地与工件表面结合，形成均匀快速氮化层，配合高速螺旋风道，有效解决工件盲孔和深孔地氮化工艺，由微电脑程序控制氮化强渗、扩散工艺加热曲线。
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The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.
专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。
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The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.
本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响，以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响，制备性能优良的氮化硅薄膜。
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The excess nitrogen atoms in WNx films desorbs at temperatures below 766 ?aC. The excess nitrogen in WNx films can cause the effective work function lowering. Weak Fermi-level pinning effect is observed on HfO2 film. In this case, WNx/HfO2 gate stack can be applied to p-type fully-depletion SOI devices but WNx is not suitable to be meal gate of bulk p-type MOSFTEs.
氮化钨中过多的氮元素在温度低於766 oC便会析出，且过多的氮会导致氮化钨有效功函数下降，在氧化铪上会有轻微的费米栓效应，这种情形下，氮化钨可应用於p-型全空乏绝缘层上矽金氧半场效电晶体元件，但不适合当块材 p-型金氧半场效电晶体闸极。
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Compared with the traditional methods, this could be an ideal approach to prepare nitrides at relative low temperature.
采用Mg〓N〓-NH〓Cl为混合氮源在500℃下氮化〓合成了氮化钼纳米晶，采用Mg〓N〓为氮源氮化〓合成了β-W〓N纳米晶。
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The results show that WO_3 can be nitrided in the mixture gas of hydrogen and nitrogen, and ...
结果表明，WO3可以在氢氮混合气中被还原氮化；氮化反应分两段进行；在氢氮体积比(4～5)∶1，反应温度650℃的条件下，WO3可以被还原为产物W2N；在不同氢氮比的混合气中氮化，WO3会生成不同的中间产物WO2和WOXNY，中间产物WOXNY进一步氮化生成W2N要比WO2容易；助剂Ni的加入使氮化反应温度降低了100℃；载体γ-Al2O3的加入使金属氧化物的氮化过程变为一步氮化还原反应。
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We are the spirit of "excellent quality, integrity of reciprocity" principle, we know the quality and technology on Product modeling and the importance of constant innovation and focus on high-quality requirements, the introduction of high-quality China-made high-quality steel and steel products "in Guangzhou Industrial Research Institute of Electrical and Mechanical Heat Treatment Technology Research Center "co-operation to provide customers with high-quality steel heat treatment and testing services, including high-quality vacuum hardening, nitriding, carbonitriding, boron nitrogen permeation, soft nitriding, annealing, quenching and tempering,, the high-frequency surface hardening, surface hardening VHF, chemical surface heat treatment, vapor deposition, such as titanium nitride.
我们本著&卓越品质，诚信互惠&的原则，我们深知质量及技术对制模及产品之重要性，不断创新服务及注重高品质要求，推出国产名优钢厂之优质钢材及与&广州市机电工业研究所热处理技术研究中心&合作为客户提供高品质热处理及钢材化验服务，含高质素真空淬火、氮化、碳氮共渗、硼氮共渗、软氮化、退火、调质、中、高频表面淬火、超音频表面淬火、化学表面热处理，气相沈积氮化钛等。
- 更多网络解释与氮化相关的网络解释 [注：此内容来源于网络，仅供参考]
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azoimide：叠氮化氢 叠氮酸 偶氮亚胺 三氮化氢
azoicsystem无生系 | azoimide叠氮化氢 叠氮酸 偶氮亚胺 三氮化氢 | azoisobutylcyanide偶氮异丁基腈
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BN：氮化硼
)含氮的化合物太多了,除了三聚氰胺、相近的还有4聚、5聚、6聚.......,还有氮化锂(Li3N)、氮化镁(Mg3N2)、氮化铝(AlN)、氮化钛(TiN)、氮化钽(TaN)氮化钛、氮化钽、氮化钒(VN)、氮化镁、氮化铝 氮化硼(BN)、五氮化三磷(P3N5)、四氮化三硅(Si3N4),
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diazotization：重氮化,偶氮化
重氮酸鹽,偶氮酸鹽 diazotate | 重氮化,偶氮化 diazotization | 顯色浴,重氮化胺浴 diazotized amine bath
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nitride passivation：氮化硅钝化
nitride oxide structure 氮化物 氧化物结构 | nitride passivation 氮化硅钝化 | nitride process 氮化硅工艺
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nitride passivation：氮化硅钝化WHV中国学习动力网
nitride oxide structure 氮化物 氧化物结构WHV中国学习动力网 | nitride passivation 氮化硅钝化WHV中国学习动力网 | nitride process 氮化硅工艺WHV中国学习动力网
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Nitriding Steel：氮化钢; 氮化钢
Nitrided Steel 渗氮钢 | Nitriding Steel 氮化钢; 氮化钢 | Non-Aging Steel 无时效钢
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diazotized base：重氮化盐基
重氮顯色染料,偶氮顯色染料 diazotized and developed dye | 重氮化鹽基 diazotized base | 重氮化,偶氮化 diazotizing
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diazotized amine bath：顯色浴,重氮化胺浴
重氮化,偶氮化 diazotization | 顯色浴,重氮化胺浴 diazotized amine bath | 重氮顯色染料,偶氮顯色染料 diazotized and developed dye
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diazotizing：重氮化,偶氮化
重氮化鹽基 diazotized base | 重氮化,偶氮化 diazotizing | 陰陽菱形花紋 dice checks
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azotizing：氮化(作用) 氮化的
azotize || 使氮化 | azotizing || 氮化(作用) 氮化的 | azotobacter || 固氮(细)菌