- 更多网络例句与氧化锗相关的网络例句 [注：此内容来源于网络，仅供参考]
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Developed optical-grade lanthanum oxide, europium oxide, terbium oxide, erbium oxide, high purity cerium oxide, cerium nitrate and indium antimonide, cadmium telluride, germanium sulfide, such as photovoltaic materials, products production base production by the quality indicators are in order to achieve the international advanced level, products are sold to Korea, Japan, the United Kingdom, the United States, India, Taiwan and other countries and regions by the approval and praise.
公司研制的光学级氧化镧、氧化铕、氧化铽、氧化铒，高纯度的氧化铈、硝酸铈及锑化铟、碲化镉、硫化锗等光电材料，产品经生产基地批量生产质量指标均以达到国际先进水平，产品销往韩国、日本、英国、美国、印度、台湾等国家和地区受到首肯和好评。
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Content of Chla,β-carotene and zeaxanthin of S. platensis grown in Se decreased, violaxathin, fucoxanthin, 19'-hexanoyloxyfucoxanthin and peridinin increased, Chla and Chlb of D. salina also decreased, but carotene increased, all pigments of D. zhanjiangensis increased except violaxanthin and 19'-hexanoyloxyfucoxanthin decreased. Effect of Ge on pigments of microalgaes were different in different algaes: Chla,β-carotene and zeaxanthin of S. platensis decreased, three other carotene increased, in D. salina, violaxanthin and lutein decreased, violaxathin, fucoxanthin and 19'-hexanoyloxyfucoxanthin increased, all pigments of D. zhanjiangensis increased except fucoxanthin and peridinin decreased; Chla,β-carotene and violaxanthin of Chlorella sp increased, but fucoxanthin and peridinin decreased.
暴露于硒中的钝顶螺旋藻（S.platensis）的叶绿素A、β-胡萝卜素和玉米黄素的含量都减少，岩藻黄素、19'-乙酰氧化岩藻黄素、多甲藻素和紫黄素的含量明显增加，盐生杜氏藻的叶绿素类也减少，但类胡萝卜素的含量则增加，湛江叉鞭金藻（D.zhanjiangensis）中除紫黄素和19'-乙酰氧化岩藻黄素有减少外，其它色素都增加；锗对四种微藻光合色素的影响也不尽相同，钝顶螺旋藻（S.platensis）的叶绿素A、β-胡萝卜素及玉米黄素含量减少，岩藻黄素、19'-乙酰氧化岩藻黄素和紫黄素的含量增加，盐生杜氏藻中除紫黄素和叶黄素有增加外，其它色素都减少，湛江又鞭金藻（D.zhanjiangensis）正相反，除岩藻黄素和多甲藻素有减少外，其它色素都增加，小球藻的叶绿素A、β-胡萝卜素和紫黄素增加较大，但岩藻黄素和多甲藻素则减少。
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On the basis of analyzing the slaggy properties,the reason- able range of slaggy composition for pyrometallurgy enrichment of low grade lead-zinc oxide ore containing germanium is determined.
本文在分析火法富集低品位含锗氧化铅锌矿炉渣性质的基础上，确定了富集过程中合理的炉渣组成范围
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On the basis of analyzing the slaggy properties the reason - able range of slaggy composition for pyrometallurgy enrichment of low grade lead zinc oxide ore containing germanium is determined .
本文在分析火法富集低品位含锗氧化铅锌矿炉渣性质的基础上，确定了富集过程中合理的炉渣组成范围；提出了调整配料比例，补加少量石灰，以改善炉渣性质，提高生产过程中的技术经济效益。
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The method takes amorphous silica as silicon source and by the steps of soaking, baking, Fe nano particles is implanted, amorphous silica implanted into Fe nano particles and Alpha germanium oxide are mixed and grinded, the obtained mixture is gas-solid treated by organic amine, so as to obtain the silicon germanium oxide composite nano line.
该方法是以无定型氧化硅作为硅源，通过浸泡、焙烧植入铁纳米粒子，再将植入铁纳米粒子的无定型氧化硅和α氧化锗混和研磨，通过有机胺的气-固相处理，最终获得硅锗氧化物复合纳米线。
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The effects of germanium on cell physiological functions were studied.
在探讨锗对细胞所产生的生理影响中，我们使用了二氧化锗 GeO2）和有机锗（ Ge-132 ）。
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We successfully incorporated oxygen into SiGe layer to form SiGeO ternary film by sputtering commixed SixGe1-x target in an Ar/O2 ambiance at room temperature. In additional we fond out that pre-annealing-capping oxide is a critical step in our experimental process, and then we used the different oxidized mechanism between Si and Ge.
在室温下，在氩气及氧气(Ar/O2)的环境中溅镀矽锗(SixGe1-x)混合靶材，此方式可以成功的将氧掺入至矽锗中形成矽锗氧三元薄膜，另外，在我们的实验中，在热退火之前先叠加上一层氧化矽为一个关键的步骤。
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The addition of germanium monoxide furthermore surprisingly increases the GAC efficiency (GAC: short for Germicidal Action Curve) of a high-pressure mercury vapor lamp, because germanium monoxide emits a strong molecular band system in the range from 250 to 280 nm.
此外令人惊讶的是，一氧化锗的添加增加了高压汞蒸气灯的GAC效率(GAC：杀菌作用曲线的简称)，因为一氧化锗发射在250到280nm范围内的强分子带体系。
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Germanate glasses in CaO-BaO-Al2O3-SiO2-GeO2 system with the yttria contents of 0-6.84% were prepared by conventional melt quenching technique. The effects of yttria contents on structure and properties of the glass system were investigated.
采用传统熔体冷却法制备氧化钇含量为0~6.84%系列的多元锗酸盐玻璃，研究氧化钇含量对CaO-BaO-Al2O3-SiO2-GeO2玻璃系统的性能与结构的影响。
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On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.
从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。
- 更多网络解释与氧化锗相关的网络解释 [注：此内容来源于网络，仅供参考]
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germander speedwell：石蚕状婆婆纳
germanate glass 锗酸盐玻璃 | germander speedwell 石蚕状婆婆纳 | germania 氧化锗
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Germania：氧化锗
geometry size 图形设计规则 | germania 氧化锗 | germanium 锗
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germanium oxide：氧化锗
电子与电洞在锗(germanium)半导体中的迁移率(mobility)要比在矽半导体中大许多,因此若采用锗来制做半导体元件,将能有效提升元件的操作速度,然而却由於二氧化锗(germanium oxide)的性质不稳定,锗始终与金属氧化物半导体(MOS)元件无缘.
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germanium oxide：氧化锗arX中国学习动力网
germanium junction 锗结arX中国学习动力网 | germanium oxide 氧化锗arX中国学习动力网 | germanosilicate glass 锗硅酸盐玻璃arX中国学习动力网
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germanium oxide optical fiber：氧化锗光纤
germanium nitride 氮化锗 | germanium oxide optical fiber 氧化锗光纤 | germanium oxide 氧化锗
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germanium：锗arX中国学习动力网
germania 氧化锗arX中国学习动力网 | germanium 锗arX中国学习动力网 | germanium junction 锗结arX中国学习动力网
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germanous：亚锗 二价锗
germanotype 日耳曼型 | germanous 亚锗 二价锗 | germanousoxide 一氧化锗
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germanous oxide：一氧化锗
germanosilicate glass 锗硅酸盐玻璃 | germanous oxide 一氧化锗 | germed barley 大麦芽
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high-purity cerium dioxide：高纯氧化铈
high-purity beryllium oxide ==> 高纯氧化铍 | high-purity cerium dioxide ==> 高纯氧化铈 | high-purity germanium detector ==> 高纯锗探测器
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germander speedwell：石蚕状婆婆纳
germanate glass ==> 锗酸盐玻璃 | germander speedwell ==> 石蚕状婆婆纳 | germania ==> 氧化锗