- 更多网络例句与栅电流相关的网络例句 [注：此内容来源于网络，仅供参考]
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Because of the existence of the superconducting gap, the normal photon-assisted tunneling process become more complicated, leading to many variations of the current between positive and negative values in I vs gate voltage Vg curve.
在正常-量子点-正常体系中，所有的 PAT 峰都为正峰，间距为 hn 。⑶由于超导能隙的存在，正常的光子协助隧穿过程将更为复杂，使得电流-栅压的关系出现多次在正负之间的变化。
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It consists of circuitry that this constant current circuit stabilizes the criteria of a highly precise returned type constant current circuit of operation in another constant current circuit,Furthermore, the voltage amplification with very high stability is realized by adopting this constant current circuit also as the bias circuit of a first rank cascode and the 2nd step cascode, and the 2nd step constant current load intensity.
它由电路，这恒流电路稳定的标准，一个高度精确的返回式恒流电路的运行在另一恒流电路，此外，电压放大具有极高的稳定性，实现了通过这项恒流电路也作为偏见电路的第一级和第二栅栅一步，和第二步骤恒定电流负荷强度。
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These high values for drive current evoke more questions regarding the gate structure.
这些驱动电流的高数值引起了更多对于栅结构的疑问。
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When the temperature of the modified Mo-grids is kept at 650 ℃, the modified Mo-grids' electron emission can not be detected with microammeter after 1000h life-span.
将样品进行电子管模拟栅发射试验，栅极温度为 650℃，试验 1000h以上基本无栅发射电流，可以提高栅控管的可靠性和寿命。
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A novel zero-voltage and zero-current resonant pole soft-switching inverter was proposed to achieve zero- voltage and zero-current switching simultaneously when main power devices turn-on and turn-off. Therefore, turn-on capacitive losses could be reduced for devices which the intrinsic capacitor value cannot be neglected. Additionally losses caused by the tail current can also be reduced, when IGBTs are used as main switches.
提出一种新型的零电压零电流谐振极型软开关逆变器，可以在主功率器件开通和关断时，同时实现零电压和零电流，因此对于内部电容不能忽略的器件，可减小容性开通损耗，当绝缘栅双极型晶体管(insulated gate bipolar transistor，IGBT)作为主功率器件时，也可减小拖尾电流引起的损耗。
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A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
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A series of slow drain current recovery transients at different gate biases after a short-term stress are observed in an AlGaN/GaN HEMT. As the variation of the time constants of the transients is small, the working trap is determined to be electronic.
观察了AlGaN/GaN HEMT器件在短期应力后不同栅偏置下的一组漏极电流瞬态，发现瞬态的时间常数随栅偏压变化很小，据此判断这组瞬态由电子陷阱的释放引起。
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In order to make clear the phenomenon of current zero in the arc-quenching chamber of deion plates, the process of dielectric recovery and reignition of short arc between iron plates is investigated, and then the dielectric recovery strengths of various chambers are measured and compared. The different characteristics near current zero in the deion plate chambers are also analyzed based on experiments in the paper.
为弄清栅片灭弧室内电弧电流的过零过程，专门研究了不同条件下栅片间低压短弧的介质强度恢复过程和电弧重燃过程，然后测量了多纵缝和栅片灭弧室的介质恢复强度，对比了它们的熄弧性能，在试验的基础上，分析了栅片灭弧室中电弧电流的过零特征。
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The effects of AlN spacer layer on AlGaN/GaN HEMTs are studied, and the results show that the insertion of AlN spacer layer can improve gate schottky barrier and decrease gate leakage current.
研究了AlN阻挡层对AlGaN/GaN HEMT器件性能的影响，结果表明，AlN阻挡层的增加提高了栅肖特基势垒，增加器件的关断电压，降低了栅泄漏电流。
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The temperature dependence of the distribution of the two-dimensional electron gas,the sheet resistance,the ohmic specific contact resistance,and the buffer leakage current are analyzed.
得出了器件饱和电流随温度升高而下降主要由输运特性退化造成，沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论。
- 更多网络解释与栅电流相关的网络解释 [注：此内容来源于网络，仅供参考]
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gate control signal：栅控信号
gate circuit 门电路 | gate control signal 栅控信号 | gate current 栅电流
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IGAIN Current Gain：增益电流,常用于诺基亚手机电路
IFVCOE Intermediate Frequency Voltage Controlled Oscillator Emitter 中频VCO振荡管发射... | IGAIN Current Gain 增益电流,常用于诺基亚手机电路. | IGFET Insulated Gate Field-Effct-Transistor 绝缘栅场效应管
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grid control unit：栅控装置
grid capacity 栅极电容 | grid control unit 栅控装置 | grid current 栅极电流
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grid current：栅极电流,栅流
837. grid controlled X ray tube 栅控X射线管 | 838. grid current 栅极电流,栅流 | 839. grid cut off voltage 栅极截止电压
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screen grid current：屏栅电流
"screen-factor ","屏蔽因数" | "screen-grid current ","屏栅电流" | "screen-grid dissipation ","屏栅消耗"
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inverse grid current：逆栅电流
inverse action 反向操作 | inverse grid current 逆栅电流 | inverter 反相器;反换[流]器
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relative permittivity：相对介电常数
唯一公布的是high-k材料的相对介电常数(Relative Permittivity)为25~35. 其特点不在于采用的材料,而在于将high-k材料和金属栅电极组合在一起的工艺技术. 要想应用high-k材料,必须克服阀值电流增加和电子迁移率下降的问题.
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thermionic valve：电子管
置于热电子管(thermionic valve)或阴极射线管(cath- ode-ray tube)的阴极与阳极之间、用来控制从阴极到阳极的电子流的丝网状电极. 一个振荡的电信号馈送到控制栅,将会在阳极产生一个相似但却放大了的电流信号. 于是形成了电子管放大器的基础.