- 更多网络例句与栅压相关的网络例句 [注：此内容来源于网络，仅供参考]
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Because of the existence of the superconducting gap, the normal photon-assisted tunneling process become more complicated, leading to many variations of the current between positive and negative values in I vs gate voltage Vg curve.
在正常-量子点-正常体系中，所有的 PAT 峰都为正峰，间距为 hn 。⑶由于超导能隙的存在，正常的光子协助隧穿过程将更为复杂，使得电流-栅压的关系出现多次在正负之间的变化。
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NBTI effects can also be influenced by ratio of signal and vacancy. The dynamic characteristics in NBTI degradation was revealed under action of negative and positive gate voltage, degradation can be recovered by positive gate voltage stress.
在负-正-负栅压交替作用下PMOSFET器件中会呈现退化-钝化-退化的动态作用过程，正栅压作用下的PMOSFET器件特性退化会有一定程度的恢复，这是由于在正栅压作用下NBTI反应产物逆向向Si／SiO〓界面处运动从而发生钝化作用造成的。
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It can also be applied to different voltage range, if the subcircuit model uses different types of FET models.
同时，根据不同沟道区域的饱和原理，采用不同的模型与参数进行模拟，使子电路适用于不同栅压和漏压。
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From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.
从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系，并且发现△V与背栅压的大小无关。
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The characteristics of charge storage in APCVD Si 3N 4/thermal\|grown SiO 2 double layers electret films, charged by coroma were investigated by measurements of isothermal surface potential decay and thermally stimulated discharge.
利用等温表面电位衰减及热刺激放电(thermallystimulateddischarge ，TSD)方法探讨了恒栅压电晕充电经常压化学气相沉积的Si基Si3N4 和热生长SiO2 双层薄膜驻极体电荷的存储特性。
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Due to the modulation of the piezoelectricity, a hole well is formed.
表明在栅压和压电极化场的共同作用下，可以形成的空穴聚集。
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A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
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The deep\|saturation of drain current in transfer character is found in many transistors.
发现在众多的MOSFET中，输出特性曲线的低漏压端都出现了"鸟嘴"形畸变，表现在转移特性曲线上便是高栅压区域中漏电流的深度饱和。
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It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function.
分析了栅压对改变非线性跨导在混频器中的作用。
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It also demonstrated that degradation slope of Vth will become lower and reach a constant quantity. Higher Temperature and gate voltage enhanced the V〓, shift of PMOSFET. With the gate oxide growing thinner and channel length growing more lessen, the influence of NBTI effects will become more and more severity.
应力温度的升高以及负栅压应力的增大都会使器件的V〓漂移增强，而且随着器件栅长L的减小，栅氧厚度T〓减薄等使PMOSFET中的NBTI效应呈现出了增强的趋势，这使得NBTI退化有可能成为未来CMOS器件发展的严重障碍。
- 更多网络解释与栅压相关的网络解释 [注：此内容来源于网络，仅供参考]
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Vibrating Cascades：振动叶栅
振动压实:Vibrating compaction | 振动叶栅:Vibrating Cascades | 振动传感器:Vibrating-transducers
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control, variable voltage：变压控制
速率控制 control, speed | 变压控制 control, variable voltage | 控栅板极跨导;(控制)栅屏互导 control-grid-plate transconductance
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starting grip voltage：着火栅压
starting grid voltage 起动栅压 | starting grip voltage 着火栅压 | starting voltage 起始电压; 起动电压; 阈电压
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floor strutting：木楼板搁栅撑
floor strip 底板压条 | floor strutting 木楼板搁栅撑 | floor swab 起模用毛笔
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grid battery：栅偏压电池
greywacke 杂砂岩 | grid battery 栅偏压电池 | grid bias voltage 栅压
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grid bias：栅偏[电]压
踏格台 grating platform | 栅偏[电]压 grid bias | 格架 grillage
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grid bias voltage：栅压
grid battery 栅偏压电池 | grid bias voltage 栅压 | grid circuit 栅极电路
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grid voltage：栅压
grid variation 网格偏差 | grid voltage 栅压 | grid winding 栅极绕组
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critical grid voltage：临界栅压
critical fusion frequency 临界停闪频率 | critical grid voltage 临界栅压 | critical illumination 临界照明
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cut-off grid voltage：截止栅压
cut-off grid bias 截止栅极偏压 | cut-off grid voltage 截止栅压 | cut-off handle 截止手柄