- 更多网络例句与极型相关的网络例句 [注:此内容来源于网络,仅供参考]
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Further, we investigated the possible impact of SDP on ENSO event in interannual scale by researching the anomalous characteristics of sea temperature, wind, convergence and divergence, total cloud amount, radiation and so on. The results showed that the influence of SDP on ENSO involve not only the process of positive and negative air-sea feedback, but also the interaction between atmospheric circulation over tropical and subtropical, specially the eastward propagation of anomalous zonal wind from the equatorial Indian Ocean to the Pacific Ocean. Otherwise, it also relates, to some extent, to the transition of large-scale climatic mean flow over the Indian Ocean and Pacific Ocean.
进一步,本文通过分析SDP事件前后期海温、高低层风、低层辐合辐散、高空云量和辐射等的变化特征研究了南印度洋偶极型海温异常在ENSO事件中的作用,结果表明:SDP在ENSO事件中的作用不仅涉及海气相互作用的正负反馈过程,还与热带和副热带大气环流之间的相互作用有关,特别是与东南印度洋海温变化所引起的异常纬向风由赤道印度洋向赤道太平洋传播的过程等有十分直接的关系;同时,SDP对ENSO事件的影响在很大程度上还依赖于大尺度平均气流随季节的变换。
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This paper proposes an analog synthesis circuit of a wavelet function approximator using sigmoidal mother wavelet.
小波函数使用反曲型母小波模拟,电路由双极型晶体管、可控放大器和线性无源电子元件等组成。
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Because of the rapid development of the wireless communication technology, the design and research of the integrated circuits in the related field has gained more and more attention in recent years. And with the advance of the IC process technology, the cutoff frequency of MOS devices can reach several giga herz or more. It is a trend that CMOS process will replace the III-V compound process such as gallium arsenide or silicon bipolar process which were dominant in the fields of radio frequency and microwave.
近年来,由于无线通信技术的飞速发展,相关领域的集成电路的设计研究也受到越来越多的关注;同时由于工艺技术的不断进步,MOS器件的特征频率也可以达到几个GHz或更高的水平,原来在射频、微波领域占主导地位的三五族化合物半导体工艺如砷化镓及硅双极型工艺也有逐渐被CMOS工艺所取代的趋势。
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METHODS: On the basis of PMT passive voltage biasing circuit, Bipolar Transistor or Field Effect Transistor were used. Additionally,"adjustable constant current technology" was adopted to avoid the effect of temperature on circuit.
在电阻型光电路倍增管偏置电的基础上,增加双极型晶体管或场效应晶体管构成有源光电倍增管偏置电路;并采用可调恒流技术,以解决温度对电路的影响。
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Our results indicate that not only the poloidal convection patterns in uppermost mantle have good correlations to surface tectonic motion, but also the toroidal ones reveal important information of their horizontal motion and rotation for the first time. There is a SEE_NWW strong convection zone close to the equator in toroidal convection patterns, which probably correlates with the large_scale shear zone near the equator and is the deep dynamic background of strong earthquake occurrence in this zone. The opposite rotating large_scale convection rolls in the Southern and Northern hemispheres suggest that maybe there is differential rotation between them.
研究结果表明,不但地幔浅部的极型场对流图像显示出了与大地构造运动的相关性并揭示了其深部动力学过程,更重要的是,地幔浅部的环型场对流图像首次为我们认识和理解板块构造的水平与旋转运动提供了重要的信息:环型场速度剖面中在赤道附近存在一条大致南东东—北西西向的强对流条带,可能与环赤道附近大型剪切带的形成相关,进而表明可能是该带强震发生的深部动力学背景;在南北半球存在的旋转方向相反的对流环表明它们整体上可能存在差异旋转。
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Transient response of bipolar junction transistor under intense electromagnetic pulse.
双极型晶体管在强电磁脉冲作用下的瞬态响应。
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In order to get the optimal noisy matching,analyzed and compared inside resistance and noise characteristics of bipolar junction transistor、integrated operation amplifier and junction field-effect transistorand the characteristics of three coupled modes.
为了达到最佳噪声匹配,分析比较了双极型晶体管、集成运放及场效应管的内阻、噪声特性及三种不同耦合方式的特点,从而总结出对于低内阻信号源较理想的前置放大器的有源器件是单级或多级并联双极型晶体管。
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A novel zero-voltage and zero-current resonant pole soft-switching inverter was proposed to achieve zero- voltage and zero-current switching simultaneously when main power devices turn-on and turn-off. Therefore, turn-on capacitive losses could be reduced for devices which the intrinsic capacitor value cannot be neglected. Additionally losses caused by the tail current can also be reduced, when IGBTs are used as main switches.
提出一种新型的零电压零电流谐振极型软开关逆变器,可以在主功率器件开通和关断时,同时实现零电压和零电流,因此对于内部电容不能忽略的器件,可减小容性开通损耗,当绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)作为主功率器件时,也可减小拖尾电流引起的损耗。
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Major products of electron industry have bipolar digital IC, small exterior plastic sealing IC, single slice IC, integrated function module, thin and thick module composed IC, integration pressure sensor, semiconductor plastic down-lead frame, bipolar electrostatic induction transistor BSIT, power commutation diode SBD, microwave scanning frequency test system, ultrahigh frequency test system, waveguide coaxial system and satellite communications aerial etc.
电子行业主要产品有双极型数字集成电路、小外型塑封集成电路、单片集成电路、集成化功能模块、薄厚膜混合集成电路、集成压力传感器、半导体塑料引线框架、双极静电感应晶体管 BSIT 、功率肖特基整流二级管 SBD 、微波扫频测试系统、超高频测试系统、波导同轴系统、卫星通讯天线等。
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There are two basic forms, bipolar and unipolar.
它分为双极型和单极型两种型式。
- 更多网络解释与极型相关的网络解释 [注:此内容来源于网络,仅供参考]
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bipolar:双极型
在20世纪70年代末期,双极型(bipolar)晶体管技术已经成为领导潮流的数字电子技术. 在1980年前后,通过多年的奋起直追,MOS技术才终于扭转了这一局势,并且当时在双极型晶体管技术和MOS共用技术之间存在着交叉的现象. 随后科学家们发现,
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bipolar transistor:双极型晶体管
占空比(Duty Cycle)在电信领域中有如下含义: 在一串理想的脉冲序列中(如方波),正脉冲的持 ..双极型晶体管(Bipolar Transistor) 由两个背靠背PN结构成的具有电流放大作用的晶体三极管 ..
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extreme form:极型
extreme 外项 | extreme form 极型 | extreme point 极值点
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absolutely extreme form:绝对极型
absolutely dried condition | 绝对干状态 | absolutely extreme form | 绝对极型 | absolutely irreducible representation | 绝对不可约表示
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bipolar junction transistor:双极结型晶体管
BT bipolar flip-flop 驮极型触发器 | bipolar junction transistor 双极结型晶体管 | bipolar metal oxide semiconductor 双极金属氧化半导体
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bipolar mask bus:双极型屏蔽总线
双极大型积体微处理机 bipolar LSI microprocessor | 双极型屏蔽总线 bipolar mask bus | 双极内存 bipolar memory
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Bipolar PROM:双极型PROM,可程序只读存储器
双极单石记忆格 bipolar monolithic memory cell | 双极型PROM,可程序只读存储器 bipolar PROM | 双极性脉冲 bipolar pulse
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diarch:二极型 二原形
diara /河心沙洲/ | diarch /二极型/二原形/ | diarchial /两头政治的/
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interdigitated bipolar transistor:梳状双极型晶体管
interdigital transducer 梳状换能器 | interdigitated bipolar transistor 梳状双极型晶体管 | interdigitated element 梳状元件
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climax plant formation:演替顶极植物群系
climax pattern hypothesis || 顶极型假设, 演替顶极理论 | climax plant formation || 演替顶极植物群系 | climax species || 顶极种